Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RF1S50N06

RF1S50N06

50A, 60V, 0.022 OHM, N-CHANNEL

Harris Corporation
2,746 -

RFQ

RF1S50N06

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF13N50CSDTU

FQPF13N50CSDTU

MOSFET N-CH 500V 13A TO-220F

Fairchild Semiconductor
2,107 -

RFQ

FQPF13N50CSDTU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 480mOhm @ 6.5A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S630SM

RF1S630SM

N-CHANNEL POWER MOSFET

Harris Corporation
2,098 -

RFQ

RF1S630SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 6A (Tc) 10V 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SJ279S-E

2SJ279S-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,957 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HUF76145S3ST

HUF76145S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,706 -

RFQ

HUF76145S3ST

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V 3V @ 250µA 156 nC @ 10 V ±20V 4900 pF @ 25 V - 270W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF647

IRF647

N-CHANNEL POWER MOSFET

Harris Corporation
1,595 -

RFQ

IRF647

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 275 V 13A (Tc) 10V 340mOhm @ 8A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPIC5223LD

TPIC5223LD

SMALL SIGNAL N-CHANNEL MOSFET

Texas Instruments
1,177 -

RFQ

TPIC5223LD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDU6682_NL

FDU6682_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,078 -

RFQ

FDU6682_NL

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) 4.5V, 10V 6.2mOhm @ 17A, 10V 3V @ 250µA 31 nC @ 5 V ±20V 2400 pF @ 15 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Through Hole
SFT1407-TL-E

SFT1407-TL-E

N-CHANNEL SILICON MOSFET

Sanyo
700 -

RFQ

SFT1407-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FS30AS-2-T13#B00

FS30AS-2-T13#B00

HIGH SPEED SWITCHING N-CHANNEL

Renesas Electronics America Inc
9,000 -

RFQ

FS30AS-2-T13#B00

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Tc) - 100mOhm @ 15A, 10V 4V @ 1mA - - 1250 pF @ 10 V - 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK1447LS

2SK1447LS

N-CHANNEL SILICON MOSFET

onsemi
8,151 -

RFQ

2SK1447LS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2751GR-E1-A

UPA2751GR-E1-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
7,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0216DPA-WS#J53

RJK0216DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,135 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQPF8N60CYDTU

FQPF8N60CYDTU

MOSFET N-CH 600V 7.5A TO220F-3

Fairchild Semiconductor
1,924 -

RFQ

FQPF8N60CYDTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Tc) 10V 1.2Ohm @ 3.75A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1255 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S9630SM

RF1S9630SM

P-CHANNEL POWER MOSFET

Harris Corporation
1,650 -

RFQ

RF1S9630SM

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 6.5A - - - - - - - - - Surface Mount
RJK1525DPS-00#T2

RJK1525DPS-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,467 -

RFQ

RJK1525DPS-00#T2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF12N60T

FQPF12N60T

MOSFET N-CH 600V 5.8A TO220F

Fairchild Semiconductor
1,336 -

RFQ

FQPF12N60T

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.8A (Tc) 10V 700mOhm @ 2.9A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK5R1A08QM,S4X

TK5R1A08QM,S4X

UMOS10 TO-220SIS 80V 5.1MOHM

Toshiba Semiconductor and Storage
2,518 -

RFQ

TK5R1A08QM,S4X

Ficha técnica

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 5.1mOhm @ 35A, 10V 3.5V @ 700µA 54 nC @ 10 V ±20V 3980 pF @ 40 V - 45W (Tc) 175°C Through Hole
IPP030N06NF2SAKMA1

IPP030N06NF2SAKMA1

TRENCH 40<-<100V PG-TO220-3

Infineon Technologies
1,000 -

RFQ

IPP030N06NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Ta), 119A (Tc) 6V, 10V 3.05mOhm @ 70A, 10V 3.3V @ 80µA 102 nC @ 10 V ±20V 4600 pF @ 30 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD65R380E6

IPD65R380E6

MOSFET N-CH 650V 10.6A TO252-3

Infineon Technologies
5,090 -

RFQ

IPD65R380E6

Ficha técnica

Bulk CoolMOS™ E6 Active N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) - 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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