Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS33N15D

IRFS33N15D

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies
2,912 -

RFQ

IRFS33N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL31N20D

IRFSL31N20D

MOSFET N-CH 200V 31A TO262

Infineon Technologies
3,185 -

RFQ

IRFSL31N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1104S

IRL1104S

MOSFET N-CH 40V 104A D2PAK

Infineon Technologies
3,973 -

RFQ

IRL1104S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 2.4W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2703S

IRL2703S

MOSFET N-CH 30V 24A D2PAK

Infineon Technologies
2,311 -

RFQ

IRL2703S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 40mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3402S

IRL3402S

MOSFET N-CH 20V 85A D2PAK

Infineon Technologies
3,636 -

RFQ

IRL3402S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 85A (Tc) 4.5V, 7V 8mOhm @ 51A, 7V 700mV @ 250µA (Min) 78 nC @ 4.5 V ±10V 3300 pF @ 15 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR18N15D

IRFR18N15D

MOSFET N-CH 150V 18A DPAK

Infineon Technologies
3,247 -

RFQ

IRFR18N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-2335

94-2335

MOSFET N-CH 55V 28A DPAK

Infineon Technologies
3,325 -

RFQ

94-2335

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8503

IRLR8503

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
2,887 -

RFQ

IRLR8503

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU1205

IRFU1205

MOSFET N-CH 55V 44A IPAK

Infineon Technologies
3,630 -

RFQ

IRFU1205

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU13N15D

IRFU13N15D

MOSFET N-CH 150V 14A IPAK

Infineon Technologies
2,778 -

RFQ

IRFU13N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 14A (Tc) 10V 180mOhm @ 8.3A, 10V 5.5V @ 250µA 29 nC @ 10 V ±30V 620 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU18N15D

IRFU18N15D

MOSFET N-CH 150V 18A IPAK

Infineon Technologies
2,997 -

RFQ

IRFU18N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3910

IRFU3910

MOSFET N-CH 100V 16A IPAK

Infineon Technologies
3,400 -

RFQ

IRFU3910

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU4105

IRFU4105

MOSFET N-CH 55V 27A IPAK

Infineon Technologies
2,184 -

RFQ

IRFU4105

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 27A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU6215

IRFU6215

MOSFET P-CH 150V 13A IPAK

Infineon Technologies
2,719 -

RFQ

IRFU6215

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU9024N

IRFU9024N

MOSFET P-CH 55V 11A IPAK

Infineon Technologies
3,045 -

RFQ

IRFU9024N

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLMS2002

IRLMS2002

MOSFET N-CH 20V 6.5A MICRO6

Infineon Technologies
2,203 -

RFQ

IRLMS2002

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 2W (Ta) - Surface Mount
IRF7521D1

IRF7521D1

MOSFET N-CH 20V 2.4A MICRO8

Infineon Technologies
3,813 -

RFQ

IRF7521D1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 2.7V, 4.5V 135mOhm @ 1.7A, 4.5V 700mV @ 250µA (Min) 8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7523D1

IRF7523D1

MOSFET N-CH 30V 2.7A MICRO8

Infineon Technologies
2,456 -

RFQ

IRF7523D1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 4.5V, 10V 130mOhm @ 1.7A, 10V 1V @ 250µA 12 nC @ 10 V ±20V 210 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7607

IRF7607

MOSFET N-CH 20V 6.5A MICRO8

Infineon Technologies
2,841 -

RFQ

IRF7607

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU9N20D

IRFU9N20D

MOSFET N-CH 200V 9.4A IPAK

Infineon Technologies
3,665 -

RFQ

IRFU9N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 10V 380mOhm @ 5.6A, 10V 5.5V @ 250µA 27 nC @ 10 V ±30V 560 pF @ 25 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 411412413414415416417418...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario