Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC030N03MSG

BSC030N03MSG

BSC030N03 - 12V-300V N-CHANNEL P

Infineon Technologies
3,099 -

RFQ

BSC030N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPW60R031CFD7

IPW60R031CFD7

600V COOLMOS N-CHANNEL POWER MOS

Infineon Technologies
3,956 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPW65R019C7

IPW65R019C7

75A, 650V, 0.019OHM, N-CHANNEL M

Infineon Technologies
2,815 -

RFQ

IPW65R019C7

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 19mOhm @ 58.3A, 10V 4V @ 2.92mA 215 nC @ 10 V ±20V 9900 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80N06S2L-11

IPB80N06S2L-11

IPB80N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,900 -

RFQ

IPB80N06S2L-11

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 11mOhm @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPN70R1K5CE

IPN70R1K5CE

SMALL SIGNAL FIELD-EFFECT TRANSI

Infineon Technologies
2,148 -

RFQ

IPN70R1K5CE

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 700 V 5.4A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD25N06S4L-30ATMA2

IPD25N06S4L-30ATMA2

IPD25N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,407 -

RFQ

IPD25N06S4L-30ATMA2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP60R125CP

IPP60R125CP

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
3,006 -

RFQ

IPP60R125CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP60R600P6

IPP60R600P6

POWER FIELD-EFFECT TRANSISTOR, 6

Infineon Technologies
2,495 -

RFQ

IPP60R600P6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPW60R125P6

IPW60R125P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
3,799 -

RFQ

IPW60R125P6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPAN80R450P7XKSA1

IPAN80R450P7XKSA1

MOSFET N-CH 800V 11A TO220-3-31

Infineon Technologies
145 -

RFQ

IPAN80R450P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 4.5A, 10V 3.5V @ 220µA 24 nC @ 10 V ±20V 770 pF @ 500 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80N03S4L03AKSA1

IPP80N03S4L03AKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
560 -

RFQ

IPP80N03S4L03AKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP65R190C7FKSA1

IPP65R190C7FKSA1

MOSFET N-CH 650V 13A TO220-3

Infineon Technologies
3,918 -

RFQ

IPP65R190C7FKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPAN80R280P7XKSA1

IPAN80R280P7XKSA1

MOSFET N-CH 800V 17A TO220

Infineon Technologies
2,562 -

RFQ

IPAN80R280P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SP000685844

SP000685844

IPP60R125C6XKSA1 - COOLMOS N-CHA

Infineon Technologies
2,735 -

RFQ

SP000685844

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI041N12N3G

IPI041N12N3G

IPI041N12 - 12V-300V N-CHANNEL P

Infineon Technologies
2,402 -

RFQ

IPI041N12N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP60R125C6

IPP60R125C6

POWER FIELD-EFFECT TRANSISTOR, 3

Infineon Technologies
3,024 -

RFQ

IPP60R125C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI075N15N3G

IPI075N15N3G

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
2,332 -

RFQ

IPI075N15N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA60R125CFD7XKSA1

IPA60R125CFD7XKSA1

MOSFET N-CH 600V 11A TO220

Infineon Technologies
2,513 -

RFQ

IPA60R125CFD7XKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R160P6

IPA60R160P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
3,411 -

RFQ

IPA60R160P6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA90R800C3

IPA90R800C3

MOSFET N-CH 900V 6.9A TO220

Infineon Technologies
3,367 -

RFQ

IPA90R800C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) - 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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