Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP60R600P7XKSA1

IPP60R600P7XKSA1

MOSFET N-CH 650V 6A TO220-3

Infineon Technologies
118 -

RFQ

IPP60R600P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD50N04S4-08

IPD50N04S4-08

IPD50N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
2,958 -

RFQ

IPD50N04S4-08

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC030N03LSG

BSC030N03LSG

BSC030N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,665 -

RFQ

BSC030N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPB07N60C3

SPB07N60C3

SPB07N60 - 600V COOLMOS N-CHANNE

Infineon Technologies
2,338 -

RFQ

SPB07N60C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB47N10SL-26

IPB47N10SL-26

IPB47N10 - 75V-100V N-CHANNEL AU

Infineon Technologies
2,824 -

RFQ

IPB47N10SL-26

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 4.5V, 10V 26mOhm @ 33A, 10V 2V @ 2mA 135 nC @ 10 V ±20V 2500 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI600N25N3G

IPI600N25N3G

IPI600N25 - 12V-300V N-CHANNEL P

Infineon Technologies
2,838 -

RFQ

IPI600N25N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC090N03MSG

BSC090N03MSG

BSC090N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,322 -

RFQ

BSC090N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP80R750P7XKSA1

IPP80R750P7XKSA1

MOSFET N-CH 800V 7A TO220-3

Infineon Technologies
584 -

RFQ

IPP80R750P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 51W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP100N08N3GXKSA1

IPP100N08N3GXKSA1

MOSFET N-CH 80V 70A TO220-3

Infineon Technologies
189 -

RFQ

IPP100N08N3GXKSA1

Ficha técnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 10mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB7537PBF

IRFB7537PBF

MOSFET N-CH 60V 173A TO220AB

Infineon Technologies
2,748 -

RFQ

IRFB7537PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 173A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSS606NH6327

BSS606NH6327

BSS606 - 250V-600V SMALL SIGNAL

Infineon Technologies
3,495 -

RFQ

BSS606NH6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSO080P03NS3G

BSO080P03NS3G

BSO080P03 - 20V-250V P-CHANNEL P

Infineon Technologies
2,451 -

RFQ

BSO080P03NS3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSS7728NH6327

BSS7728NH6327

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
3,749 -

RFQ

BSS7728NH6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC090N03LSG

BSC090N03LSG

BSC090N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,848 -

RFQ

BSC090N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPD15P10PG

SPD15P10PG

SPD15P10 - 20V-250V P-CHANNEL PO

Infineon Technologies
3,220 -

RFQ

SPD15P10PG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPP11N65C3XK

SPP11N65C3XK

SPP11N65 - 650V AND 700V COOLMOS

Infineon Technologies
2,772 -

RFQ

SPP11N65C3XK

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD78CN10NG

IPD78CN10NG

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies
2,690 -

RFQ

IPD78CN10NG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFZ44ZLPBF

IRFZ44ZLPBF

MOSFET N-CH 55V 51A TO262

Infineon Technologies
726 -

RFQ

IRFZ44ZLPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP114N12N3GXKSA1

IPP114N12N3GXKSA1

MOSFET N-CH 120V 75A TO220-3

Infineon Technologies
220 -

RFQ

IPP114N12N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 75A (Tc) 10V 11.4mOhm @ 75A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4310 pF @ 60 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2204PBF

IRF2204PBF

MOSFET N-CH 40V 210A TO220AB

Infineon Technologies
401 -

RFQ

IRF2204PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 210A (Tc) 10V 3.6mOhm @ 130A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5890 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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