Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRLR3705Z

AUIRLR3705Z

AUIRLR3705 - 55V-60V N-CHANNEL A

Infineon Technologies
3,467 -

RFQ

AUIRLR3705Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 8mOhm @ 42A, 10V 3V @ 250µA 66 nC @ 5 V ±16V 2900 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7821TRPBF-1

IRF7821TRPBF-1

IRF7821 - 30V SINGLE N-CHANNEL H

Infineon Technologies
2,953 -

RFQ

IRF7821TRPBF-1

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13.6A (Ta) 4.5V, 10V 9.1mOhm @ 13A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1010 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
AUIRF2804STRL7P

AUIRF2804STRL7P

AUIRF2804 - 20V-40V N-CHANNEL AU

Infineon Technologies
2,128 -

RFQ

AUIRF2804STRL7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB42N20DPBF

IRFB42N20DPBF

IRFB42N20 - 12V-300V N-CHANNEL P

Infineon Technologies
2,400 -

RFQ

IRFB42N20DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 44A (Tc) 10V 55mOhm @ 26A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3430 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3805S-7P

AUIRF3805S-7P

AUIRF3805 - 55V-60V N-CHANNEL AU

Infineon Technologies
3,616 -

RFQ

AUIRF3805S-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU9343PBF

IRLU9343PBF

IRLU9343 - 20V-250V P-CHANNEL PO

Infineon Technologies
3,552 -

RFQ

IRLU9343PBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) - 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRF7488TRPBF

IRF7488TRPBF

IRF7488 - 12V-300V N-CHANNEL POW

Infineon Technologies
3,932 -

RFQ

IRF7488TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 6.3A (Ta) 10V 29mOhm @ 3.8A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPAN70R900P7SXKSA1

IPAN70R900P7SXKSA1

MOSFET N-CH 700V 6A TO220

Infineon Technologies
290 -

RFQ

IPAN70R900P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 900mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8 nC @ 10 V ±16V 211 pF @ 400 V - 17.9W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA60R600P7SXKSA1

IPA60R600P7SXKSA1

MOSFET N-CH 600V 6A TO220

Infineon Technologies
409 -

RFQ

IPA60R600P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 21W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPAN50R500CEXKSA1

IPAN50R500CEXKSA1

MOSFET N-CH 500V 11.1A TO220

Infineon Technologies
474 -

RFQ

IPAN50R500CEXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.1A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA50R500CEXKSA2

IPA50R500CEXKSA2

MOSFET N-CH 500V 5.4A TO220

Infineon Technologies
185 -

RFQ

IPA50R500CEXKSA2

Ficha técnica

Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 5.4A (Tc) 13V 500mOhm @ 2.3A, 13V 3.5V @ 200µA 18.7 nC @ 10 V ±20V 433 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA65R1K0CEXKSA1

IPA65R1K0CEXKSA1

MOSFET N-CH 650V 7.2A TO220

Infineon Technologies
397 -

RFQ

IPA65R1K0CEXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.2A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V Super Junction 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP041N04NGXKSA1

IPP041N04NGXKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
297 -

RFQ

IPP041N04NGXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 45µA 56 nC @ 10 V ±20V 4500 pF @ 20 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R190P6

IPW60R190P6

MOSFET N-CH 600V 20.2A TO247

Infineon Technologies
3,129 -

RFQ

IPW60R190P6

Ficha técnica

Bulk CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) - 190mOhm @ 7.6A, 10V 4.5V @ 630µA 37 nC @ 10 V ±20V 1750 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA80R1K4P7

IPA80R1K4P7

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies
2,312 -

RFQ

IPA80R1K4P7

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 70µA 10 nC @ 10 V ±20V 250 pF @ 500 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD050N03L G

IPD050N03L G

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,012 -

RFQ

IPD050N03L G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSZ22DN20NS3G

BSZ22DN20NS3G

BSZ22DN20 - 12V-300V N-CHANNEL P

Infineon Technologies
3,513 -

RFQ

BSZ22DN20NS3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPS65R1K4C6

IPS65R1K4C6

MOSFET N-CH 650V 3.2A TO251-3

Infineon Technologies
2,411 -

RFQ

IPS65R1K4C6

Ficha técnica

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) - 1.4Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP034N03LGXKSA1

IPP034N03LGXKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
135 -

RFQ

IPP034N03LGXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF100B202

IRF100B202

MOSFET N-CH 100V 97A TO220AB

Infineon Technologies
366 -

RFQ

IRF100B202

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 8.6mOhm @ 58A, 10V 4V @ 150µA 116 nC @ 10 V ±20V 4476 pF @ 50 V - 221W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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