Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC0704LSATMA1

BSC0704LSATMA1

MOSFET N-CH 60V 11A/47A TDSON

Infineon Technologies
2,677 -

RFQ

BSC0704LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 47A (Tc) 4.5V, 10V 9.4mOhm @ 24A, 10V 2.3V @ 14µA 9.4 nC @ 4.5 V ±20V 1300 pF @ 30 V - 2.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0909LSATMA1

BSZ0909LSATMA1

MOSFET N-CH 30V 19A/40A TSDSON

Infineon Technologies
3,687 -

RFQ

BSZ0909LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 40A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 2V @ 250µA 26 nC @ 10 V ±20V 1700 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
BSC016N03MSG

BSC016N03MSG

BSC016N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,479 -

RFQ

BSC016N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSZ12DN20NS3G

BSZ12DN20NS3G

BSZ12DN20 - 12V-300V N-CHANNEL P

Infineon Technologies
3,981 -

RFQ

BSZ12DN20NS3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD50N06S2-14

IPD50N06S2-14

IPD50N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,473 -

RFQ

IPD50N06S2-14

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 50A (Tc) 10V 14.4mOhm @ 32A, 10V 4V @ 80µA 52 nC @ 10 V ±20V 1485 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1IRF3710PBF

1IRF3710PBF

IRF3710 - 100V HEXFET N-CHANNEL

Infineon Technologies
3,272 -

RFQ

1IRF3710PBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSS214NWH6327

BSS214NWH6327

BSS214 - 250V-600V SMALL SIGNAL

Infineon Technologies
2,071 -

RFQ

BSS214NWH6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC042N03LSG

BSC042N03LSG

BSC042N03 - 12V-300V N-CHANNEL P

Infineon Technologies
3,349 -

RFQ

BSC042N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPW60R099CP

IPW60R099CP

MOSFET N-CH 600V 31A TO247-3-1

Infineon Technologies
3,355 -

RFQ

IPW60R099CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) - 99mOhm @ 18A, 10V 3.5V @ 1.2mA 80 nC @ 10 V ±20V 2800 pF @ 100 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSO201SPH

BSO201SPH

BSO201 - 20V-250V P-CHANNEL POWE

Infineon Technologies
2,299 -

RFQ

BSO201SPH

Ficha técnica

Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 2.5V, 4.5V 8mOhm @ 14.9A, 4.5V 1.2V @ 250µA 88 nC @ 4.5 V ±12V 9600 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC080N03MSG

BSC080N03MSG

BSC080N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,587 -

RFQ

BSC080N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP048N12N3GXKSA1

IPP048N12N3GXKSA1

MOSFET N-CH 120V 100A TO220-3

Infineon Technologies
3,320 -

RFQ

IPP048N12N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 4.8mOhm @ 100A, 10V 4V @ 230µA 182 nC @ 10 V ±20V 12000 pF @ 60 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R070P6

IPW60R070P6

600V, 0.07OHM, N-CHANNEL MOSFET

Infineon Technologies
3,821 -

RFQ

IPW60R070P6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 53.5A (Tc) 10V 70mOhm @ 20.6A, 10V 4.5V @ 1.72mA 100 nC @ 10 V ±20V 4750 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ)
IPW60R330P6

IPW60R330P6

IPW60R330 - 600V COOLMOS N-CHANN

Infineon Technologies
3,297 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPD50R800CE

IPD50R800CE

IPD50R800 - 500V COOLMOS N-CHANN

Infineon Technologies
3,630 -

RFQ

IPD50R800CE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD90N06S4L-05

IPD90N06S4L-05

IPD90N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,691 -

RFQ

IPD90N06S4L-05

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 4.6mOhm @ 90A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP50R399CP

IPP50R399CP

IPP50R399 - 500V COOLMOS N-CHANN

Infineon Technologies
2,228 -

RFQ

IPP50R399CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP60R180C7

IPP60R180C7

13A, 600V, 0.18OHM, N-CHANNEL MO

Infineon Technologies
2,168 -

RFQ

IPP60R180C7

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 180mOhm @ 5.3A, 10V 4V @ 260µA 24 nC @ 10 V ±20V 1080 pF @ 400 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF6215

AUIRF6215

AUIRF6215 - 20V-150V P-CHANNEL A

Infineon Technologies
3,925 -

RFQ

AUIRF6215

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL3806PBF

IRFSL3806PBF

IRFSL3806 - 12V-300V N-CHANNEL P

Infineon Technologies
2,648 -

RFQ

IRFSL3806PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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