Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1010ZPBF

IRF1010ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
143 -

RFQ

IRF1010ZPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP037N06L3GXKSA1

IPP037N06L3GXKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies
500 -

RFQ

IPP037N06L3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.7mOhm @ 90A, 10V 2.2V @ 93µA 79 nC @ 4.5 V ±20V 13000 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB5615PBF

IRFB5615PBF

MOSFET N-CH 150V 35A TO220AB

Infineon Technologies
580 -

RFQ

IRFB5615PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 39mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAW60R180P7SXKSA1

IPAW60R180P7SXKSA1

MOSFET N-CHANNEL 650V 18A TO220

Infineon Technologies
553 -

RFQ

IPAW60R180P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI3705NPBF

IRLI3705NPBF

MOSFET N-CH 55V 52A TO220AB FP

Infineon Technologies
547 -

RFQ

IRLI3705NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 52A (Tc) 4V, 10V 10mOhm @ 28A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR18N15DTRPBF

IRFR18N15DTRPBF

IRFR18N15 - 12V-300V N-CHANNEL P

Infineon Technologies
2,163 -

RFQ

IRFR18N15DTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) - 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R120C7XKSA1

IPA60R120C7XKSA1

IPA60R120 - 11A, 600V, 0.12OHM

Infineon Technologies
2,018 -

RFQ

IPA60R120C7XKSA1

Ficha técnica

Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ)
AUIRFR8401TRL

AUIRFR8401TRL

AUIRFR8401 - 20V-40V N-CHANNEL A

Infineon Technologies
3,782 -

RFQ

AUIRFR8401TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 50µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW90R1K2C3FKSA1

IPW90R1K2C3FKSA1

IPW90R1 - 900V COOLMOS N-CHANNEL

Infineon Technologies
2,939 -

RFQ

IPW90R1K2C3FKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80P03P4L04ATMA1

IPB80P03P4L04ATMA1

MOSFET_(20V,40V)

Infineon Technologies
3,794 -

RFQ

IPB80P03P4L04ATMA1

Ficha técnica

Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.1mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP70N10S3L12AKSA1

IPP70N10S3L12AKSA1

MOSFET_(75V,120V(

Infineon Technologies
2,715 -

RFQ

IPP70N10S3L12AKSA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 12.1mOhm @ 70A, 10V 2.4V @ 83µA 80 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSO065N03MSGXUMA1

BSO065N03MSGXUMA1

MOSFET N-CH 30V 13A 8DSO

Infineon Technologies
2,099 -

RFQ

BSO065N03MSGXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 6.5mOhm @ 16A, 10V 2V @ 250µA 40 nC @ 10 V ±20V 3100 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFL014NTR

AUIRFL014NTR

AUIRFL014 - 55V-60V N-CHANNEL AU

Infineon Technologies
3,779 -

RFQ

AUIRFL014NTR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 1.5A (Ta) 10V 160mOhm @ 1.9A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 190 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS84PWH6327XTSA1

BSS84PWH6327XTSA1

BSS84 - SMALL SIGNAL FIELD-EFFEC

Infineon Technologies
2,696 -

RFQ

BSS84PWH6327XTSA1

Ficha técnica

Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 150mA (Ta) 4.5V, 10V 8Ohm @ 150mA, 10V 2V @ 20µA 1.5 nC @ 10 V ±20V 19.1 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPG20N06S4L11ATMA1

IPG20N06S4L11ATMA1

IPG20N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,015 -

RFQ

IPG20N06S4L11ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPT60R102G7XTMA2

IPT60R102G7XTMA2

IPT60R102 - 600V COOLMOS N-CHANN

Infineon Technologies
2,334 -

RFQ

IPT60R102G7XTMA2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPU95R1K2P7AKMA1

IPU95R1K2P7AKMA1

IPU95R1K2P7 - 950V COOLMOS N-CHA

Infineon Technologies
2,250 -

RFQ

IPU95R1K2P7AKMA1

Ficha técnica

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 6A (Tc) 10V 1.2Ohm @ 2.7A, 10V 3.5V @ 140µA 15 nC @ 10 V ±20V 478 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSB014N04LX3GXUMA1

BSB014N04LX3GXUMA1

BSB014N04 - TRENCH <= 40V

Infineon Technologies
3,484 -

RFQ

BSB014N04LX3GXUMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 36A (Ta), 180A (Tc) 4.5V, 10V 1.4mOhm @ 30A, 10V 2V @ 250µA 196 nC @ 10 V ±20V 16900 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFSL3207ZPBF

IRFSL3207ZPBF

IRFSL3207 - 12V-300V N-CHANNEL P

Infineon Technologies
3,478 -

RFQ

IRFSL3207ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPB07N60C3ATMA1

SPB07N60C3ATMA1

SPB07N60 - COOLMOS, 7.3A, 600V N

Infineon Technologies
2,189 -

RFQ

SPB07N60C3ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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