Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC009NE2LS5IATMA1

BSC009NE2LS5IATMA1

MOSFET N-CH 25V 40A/100A TDSON

Infineon Technologies
4,339 -

RFQ

BSC009NE2LS5IATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Ta), 100A (Tc) 4.5V, 10V 0.95mOhm @ 30A, 10V 2V @ 250µA 49 nC @ 10 V ±16V 3200 pF @ 12 V - 2.5W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF7647S2TR

AUIRF7647S2TR

MOSFET N-CH 100V 5.9A DIRECTFET

Infineon Technologies
4,568 -

RFQ

AUIRF7647S2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5.9A (Ta), 24A (Tc) 10V 31mOhm @ 14A, 10V 5V @ 50µA 21 nC @ 10 V ±20V 910 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6616TRPBF

IRF6616TRPBF

MOSFET N-CH 40V 19A DIRECTFET

Infineon Technologies
6,756 -

RFQ

IRF6616TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 106A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3765 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPA037N08N3

IPA037N08N3

POWER FIELD-EFFECT TRANSISTOR, 7

Infineon Technologies
2,000 -

RFQ

IPA037N08N3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRF4905L

AUIRF4905L

AUIRF4905 - 20V-150V P-CHANNEL A

Infineon Technologies
1,200 -

RFQ

AUIRF4905L

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7580MTRPBF

IRF7580MTRPBF

MOSFET N-CH 60V 114A DIRECTFET

Infineon Technologies
2,805 -

RFQ

IRF7580MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 114A (Tc) 6V, 10V 3.6mOhm @ 70A, 10V 3.7V @ 150µA 180 nC @ 10 V ±20V 6510 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R180P7ATMA1

IPD60R180P7ATMA1

MOSFET N-CH 650V 18A TO252-3

Infineon Technologies
1,327 -

RFQ

IPD60R180P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC070N10NS5ATMA1

BSC070N10NS5ATMA1

MOSFET N-CH 100V 80A TDSON

Infineon Technologies
6,078 -

RFQ

BSC070N10NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 7mOhm @ 40A, 10V 3.8V @ 50µA 38 nC @ 10 V ±20V 2700 pF @ 50 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF8301MTRPBF

IRF8301MTRPBF

MOSFET N-CH 30V 34A DIRECTFET

Infineon Technologies
7,080 -

RFQ

IRF8301MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 34A (Ta), 192A (Tc) 4.5V, 10V 1.5mOhm @ 32A, 10V 2.35V @ 150µA 77 nC @ 4.5 V ±20V 6140 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IQE013N04LM6CGATMA1

IQE013N04LM6CGATMA1

40V N-CH FET SOURCE-DOWN CG 3X3

Infineon Technologies
4,852 -

RFQ

IQE013N04LM6CGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 205A (Tc) 4.5V, 10V 1.35mOhm @ 20A, 10V 2V @ 51µA 8 nC @ 10 V ±20V 3900 pF @ 20 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IQE013N04LM6ATMA1

IQE013N04LM6ATMA1

MOSFET N-CH 40V 31A/205A 8TSON

Infineon Technologies
4,857 -

RFQ

IQE013N04LM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 205A (Tc) - 1.35mOhm @ 20A, 10V 2V @ 51µA 55 nC @ 10 V ±20V 3900 pF @ 20 V - 2.5W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6646TRPBF

IRF6646TRPBF

MOSFET N-CH 80V 12A DIRECTFET

Infineon Technologies
3,689 -

RFQ

IRF6646TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 12A (Ta), 68A (Tc) 10V 9.5mOhm @ 12A, 10V 4.9V @ 150µA 50 nC @ 10 V ±20V 2060 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRL1404STRLPBF

IRL1404STRLPBF

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
1,575 -

RFQ

IRL1404STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUA250N04S6N008AUMA1

IAUA250N04S6N008AUMA1

OPTIMOS POWER MOSFET

Infineon Technologies
1,983 -

RFQ

IAUA250N04S6N008AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 6 Active N-Channel MOSFET (Metal Oxide) 40 V 51A (Ta) 7V, 10V 0.8mOhm @ 100A, 10V 3V @ 90µA 109 nC @ 10 V ±20V 7088 pF @ 25 V - 172W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7734TRL7PP

IRFS7734TRL7PP

MOSFET N-CH 75V 197A D2PAK

Infineon Technologies
771 -

RFQ

IRFS7734TRL7PP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 197A (Tc) 6V, 10V 3.05mOhm @ 100A, 10V 3.7V @ 150µA 270 nC @ 10 V ±20V 10130 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9383MTRPBF

IRF9383MTRPBF

MOSFET P-CH 30V 22A DIRECTFET

Infineon Technologies
3,391 -

RFQ

IRF9383MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 160A (Tc) 4.5V, 10V 2.9mOhm @ 22A, 10V 2.4V @ 150µA 130 nC @ 10 V ±20V 7305 pF @ 15 V - 2.1W (Ta), 113W (Tc) -40°C ~ 150°C (TJ) Surface Mount
ISC0802NLSATMA1

ISC0802NLSATMA1

MOSFET N-CH 100V 22A/150A TDSON

Infineon Technologies
3,314 -

RFQ

ISC0802NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Ta), 150A (Tc) 4.5V, 10V 3.6mOhm @ 50A, 10V 2.3V @ 92µA 73 nC @ 10 V ±20V 5190 pF @ 50 V - 2.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC0402NSATMA1

BSC0402NSATMA1

150V, N-CH MOSFET, LOGIC LEVEL

Infineon Technologies
6,599 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - -
IRLS3813TRLPBF

IRLS3813TRLPBF

MOSFET N-CH 30V 160A D2PAK

Infineon Technologies
109 -

RFQ

IRLS3813TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 1.95mOhm @ 148A, 10V 2.35V @ 150µA 83 nC @ 4.5 V ±20V 8020 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL65R230C7AUMA1

IPL65R230C7AUMA1

MOSFET N-CH 650V 10A 4VSON

Infineon Technologies
808 -

RFQ

IPL65R230C7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 230mOhm @ 2.4A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 67W (Tc) -40°C ~ 150°C (TJ) Surface Mount
Total 8399 Record«Prev1... 381382383384385386387388...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario