Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7451TRPBF

IRF7451TRPBF

MOSFET N-CH 150V 3.6A 8SO

Infineon Technologies
3,305 -

RFQ

IRF7451TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 3.6A (Ta) 10V 90mOhm @ 2.2A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 990 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRLU3114Z-701TRL

AUIRLU3114Z-701TRL

AUIRLU3114Z - 20V-40V N-CHANNEL

Infineon Technologies
39,000 -

RFQ

AUIRLU3114Z-701TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPD02N80C3ATMA1

SPD02N80C3ATMA1

MOSFET N-CH 800V 2A TO252-3

Infineon Technologies
2,522 -

RFQ

SPD02N80C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 2.7Ohm @ 1.2A, 10V 3.9V @ 120µA 16 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP06N60C3XKSA1

SPP06N60C3XKSA1

SPP06N60 - 600V COOLMOS N-CHANNE

Infineon Technologies
4,964 -

RFQ

SPP06N60C3XKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR2405TRLPBF

IRFR2405TRLPBF

MOSFET N-CH 55V 56A DPAK

Infineon Technologies
2,097 -

RFQ

IRFR2405TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 56A (Tc) 10V 16mOhm @ 34A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2430 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6797MTRPBF

IRF6797MTRPBF

IRF6797 - 12V-300V N-CHANNEL POW

Infineon Technologies
19,200 -

RFQ

IRF6797MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 36A (Ta), 210A (Tc) 4.5V, 10V 1.4mOhm @ 38A, 10V 2.35V @ 150µA 68 nC @ 4.5 V ±20V 5790 pF @ 13 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRLH5034TRPBF

IRLH5034TRPBF

MOSFET N-CH 40V 29A/100A 8PQFN

Infineon Technologies
3,934 -

RFQ

IRLH5034TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 100A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2.5V @ 150µA 82 nC @ 10 V ±16V 4730 pF @ 25 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC109N10NS3GATMA1

BSC109N10NS3GATMA1

MOSFET N-CH 100V 63A TDSON-8-1

Infineon Technologies
4,178 -

RFQ

BSC109N10NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 63A (Tc) 6V, 10V 10.9mOhm @ 46A, 10V 3.5V @ 45µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7854TRPBF

IRF7854TRPBF

MOSFET N-CH 80V 10A 8SO

Infineon Technologies
2,700 -

RFQ

IRF7854TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta) 10V 13.4mOhm @ 10A, 10V 4.9V @ 100µA 41 nC @ 10 V ±20V 1620 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7469TRPBF

IRF7469TRPBF

MOSFET N-CH 40V 9A 8SO

Infineon Technologies
5,147 -

RFQ

IRF7469TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 17mOhm @ 9A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2000 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPW65R022CFD7AXKSA1

IPW65R022CFD7AXKSA1

AUTOMOTIVE_COOLMOS PG-TO247-3

Infineon Technologies
3,100 -

RFQ

IPW65R022CFD7AXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±20V 11659 pF @ 400 V - 446W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPWS65R022CFD7AXKSA1

IPWS65R022CFD7AXKSA1

AUTOMOTIVE_COOLMOS PG-TO247-3

Infineon Technologies
2,087 -

RFQ

IPWS65R022CFD7AXKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±30V 11659 pF @ 400 V - 446W (Tc) -40°C ~ 150°C (TJ) Through Hole
BSC020N03MSGATMA1

BSC020N03MSGATMA1

MOSFET N-CH 30V 25A/100A TDSON

Infineon Technologies
17,072 -

RFQ

BSC020N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta), 100A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 2V @ 250µA 124 nC @ 10 V ±20V 9600 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD650P06NMATMA1

IPD650P06NMATMA1

MOSFET P-CH 60V 22A TO252-3

Infineon Technologies
2,320 -

RFQ

IPD650P06NMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 22A (Tc) 10V 65mOhm @ 22A, 10V 4V @ 1.04mA 39 nC @ 10 V ±20V 1600 pF @ 30 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC010NE2LSATMA1

BSC010NE2LSATMA1

MOSFET N-CH 25V 39A/100A TDSON

Infineon Technologies
3,919 -

RFQ

BSC010NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 39A (Ta), 100A (Tc) 4.5V, 10V 1mOhm @ 30A, 10V 2V @ 250µA 64 nC @ 10 V ±20V 4700 pF @ 12 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL80HS120

IRL80HS120

MOSFET N-CH 80V 12.5A 6PQFN

Infineon Technologies
13,396 -

RFQ

IRL80HS120

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 80 V 12.5A (Tc) 4.5V, 10V 32mOhm @ 7.5A, 10V 2V @ 10µA 7 nC @ 4.5 V ±20V 540 pF @ 25 V - 11.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6716MTRPBF

IRF6716MTRPBF

IRF6716 - 12V-300V N-CHANNEL POW

Infineon Technologies
33,845 -

RFQ

IRF6716MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 39A (Ta), 180A (Tc) 4.5V, 10V 1.6mOhm @ 40A, 10V 2.4V @ 100µA 59 nC @ 4.5 V ±20V 5150 pF @ 13 V - 3.6W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP024N06N3G

IPP024N06N3G

POWER FIELD-EFFECT TRANSISTOR, 1

Infineon Technologies
13,836 -

RFQ

IPP024N06N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPLK60R1K5PFD7ATMA1

IPLK60R1K5PFD7ATMA1

MOSFET N-CH 600V 3.8A THIN-PAK

Infineon Technologies
4,878 -

RFQ

IPLK60R1K5PFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ PFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 3.8A (Tc) 10V 1.5Ohm @ 700mA, 10V 4.5V @ 40µA 4.6 nC @ 10 V ±20V 169 pF @ 400 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC014N04LSTATMA1

BSC014N04LSTATMA1

MOSFET N-CH 40V 33A/100A TDSON

Infineon Technologies
4,213 -

RFQ

BSC014N04LSTATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 33A (Ta), 100A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 250µA 85 nC @ 10 V ±20V 6020 pF @ 20 V - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 8399 Record«Prev1... 379380381382383384385386...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario