Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB530N15N3GATMA1

IPB530N15N3GATMA1

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies
1,750 -

RFQ

IPB530N15N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 8V, 10V 53mOhm @ 18A, 10V 4V @ 35µA 12 nC @ 10 V ±20V 887 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH8303TRPBF

IRFH8303TRPBF

MOSFET N-CH 30V 43A/100A 8PQFN

Infineon Technologies
2,666 -

RFQ

IRFH8303TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 50A, 10V 2.2V @ 150µA 179 nC @ 10 V ±20V 7736 pF @ 24 V - 3.7W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF2807STRLPBF

IRF2807STRLPBF

MOSFET N-CH 75V 82A D2PAK

Infineon Technologies
1,402 -

RFQ

IRF2807STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6794MTR1PBF

IRF6794MTR1PBF

MOSFET N-CH 25V 32A DIRECTFET

Infineon Technologies
624 -

RFQ

IRF6794MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 200A (Tc) 4.5V, 10V 1.7mOhm @ 32A, 10V 2.35V @ 100µA 47 nC @ 4.5 V ±20V 4420 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) Surface Mount
ISC0805NLSATMA1

ISC0805NLSATMA1

MOSFET N-CH 100V 13A/71A TDSON

Infineon Technologies
3,802 -

RFQ

ISC0805NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Ta), 71A (Tc) 4.5V, 10V 7.8mOhm @ 50A, 10V 2.3V @ 40µA 33 nC @ 10 V ±20V 2200 pF @ 50 V - 2.5W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPLK60R1K0PFD7ATMA1

IPLK60R1K0PFD7ATMA1

MOSFET N-CH 600V 5.2A THIN-PAK

Infineon Technologies
4,280 -

RFQ

IPLK60R1K0PFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ PFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 5.2A (Tc) 10V 1Ohm @ 1A, 10V 4.5V @ 50µA 6 nC @ 10 V ±20V 230 pF @ 400 V - 31.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6678

IRF6678

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies
4,885 -

RFQ

IRF6678

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 150A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.25V @ 250µA 65 nC @ 4.5 V ±20V 5640 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD50N10S3L16ATMA1

IPD50N10S3L16ATMA1

MOSFET N-CH 100V 50A TO252-3

Infineon Technologies
2,286 -

RFQ

IPD50N10S3L16ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 15mOhm @ 50A, 10V 2.4V @ 60µA 64 nC @ 10 V ±20V 4180 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC009NE2LSATMA1

BSC009NE2LSATMA1

MOSFET N-CH 25V 41A/100A TDSON

Infineon Technologies
159 -

RFQ

BSC009NE2LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 41A (Ta), 100A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.2V @ 250µA 126 nC @ 10 V ±20V 5800 pF @ 12 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB123N10N3GATMA1

IPB123N10N3GATMA1

MOSFET N-CH 100V 58A D2PAK

Infineon Technologies
1,457 -

RFQ

IPB123N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 6V, 10V 12.3mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC040N08NS5ATMA1

BSC040N08NS5ATMA1

MOSFET N-CH 80V 100A TDSON

Infineon Technologies
4,690 -

RFQ

BSC040N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 4mOhm @ 50A, 10V 3.8V @ 67µA 54 nC @ 10 V ±20V 3900 pF @ 40 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL60R360P6SATMA1

IPL60R360P6SATMA1

MOSFET N-CH 600V 11.3A 8THINPAK

Infineon Technologies
3,701 -

RFQ

IPL60R360P6SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 11.3A (Tc) 10V 360mOhm @ 4.5A, 10V 4.5V @ 370µA 22 nC @ 10 V ±20V 1010 pF @ 100 V - 89.3W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB35N10S3L26ATMA1

IPB35N10S3L26ATMA1

MOSFET N-CH 100V 35A D2PAK

Infineon Technologies
1,460 -

RFQ

IPB35N10S3L26ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 26.3mOhm @ 35A, 10V 2.4V @ 39µA 39 nC @ 10 V ±20V 2700 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R360CFD7ATMA1

IPD60R360CFD7ATMA1

MOSFET N-CH 650V 7A TO252-3-313

Infineon Technologies
1,896 -

RFQ

IPD60R360CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 14 nC @ 10 V ±20V 679 pF @ 400 V - 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB100N04S4H2ATMA1

IPB100N04S4H2ATMA1

MOSFET N-CH 40V 100A TO263-3

Infineon Technologies
1,001 -

RFQ

IPB100N04S4H2ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 70µA 90 nC @ 10 V ±20V 7180 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSB165N15NZ3G

BSB165N15NZ3G

BSB165N15 - 12V-300V N-CHANNEL P

Infineon Technologies
4,337 -

RFQ

BSB165N15NZ3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD380P06NMATMA1

IPD380P06NMATMA1

MOSFET P-CH 60V 35A TO252-3

Infineon Technologies
1,227 -

RFQ

IPD380P06NMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 10V 38mOhm @ 35A, 10V 4V @ 1.7mA 63 nC @ 10 V ±20V 2500 pF @ 30 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0804LSATMA1

BSZ0804LSATMA1

MOSFET N-CH 100V 11A/40A TSDSON

Infineon Technologies
2,688 -

RFQ

BSZ0804LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta), 40A (Tc) 4.5V, 10V 9.6mOhm @ 20A, 10V 2.3V @ 36µA 15 nC @ 4.5 V ±20V 2100 pF @ 50 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC010N04LS6ATMA1

BSC010N04LS6ATMA1

MOSFET N-CH 40V 40A/100A TDSON

Infineon Technologies
5,350 -

RFQ

BSC010N04LS6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Ta), 100A (Tc) 4.5V, 10V 1mOhm @ 50A, 10V 2.3V @ 250µA 67 nC @ 4.5 V ±20V 4600 pF @ 20 V - 3W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL7486MTRPBF

IRL7486MTRPBF

MOSFET N-CH 40V 209A DIRECTFET

Infineon Technologies
4,789 -

RFQ

IRL7486MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 209A (Tc) 4.5V, 10V 1.25mOhm @ 123A, 10V 2.5V @ 150µA 111 nC @ 4.5 V ±20V 6904 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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