Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPDD60R090CFD7XTMA1

IPDD60R090CFD7XTMA1

MOSFET N-CH 600V 33A HDSOP-10

Infineon Technologies
1,489 -

RFQ

IPDD60R090CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) - 90mOhm @ 9.3A, 10V 4.5V @ 470µA 42 nC @ 10 V ±20V 1747 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT60R102G7XTMA1

IPT60R102G7XTMA1

MOSFET N-CH 650V 23A 8HSOF

Infineon Technologies
909 -

RFQ

IPT60R102G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 650 V 23A (Tc) 10V 102mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1320 pF @ 400 V - 141W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BTS129NKSA1

BTS129NKSA1

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
4,500 -

RFQ

BTS129NKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IAUS300N08S5N014TATMA1

IAUS300N08S5N014TATMA1

MOSFET N-CH 80V 300A HDSOP-16-2

Infineon Technologies
1,011 -

RFQ

IAUS300N08S5N014TATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tj) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 230µA 187 nC @ 10 V ±20V 13178 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT60R105CFD7XTMA1

IPT60R105CFD7XTMA1

MOSFET N-CH 600V 24A 8HSOF

Infineon Technologies
1,990 -

RFQ

IPT60R105CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 105mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMBF170R650M1XTMA1

IMBF170R650M1XTMA1

SICFET N-CH 1700V 7.4A TO263-7

Infineon Technologies
687 -

RFQ

IMBF170R650M1XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 7.4A (Tc) 12V, 15V 650mOhm @ 1.5A, 15V 5.7V @ 1.7mA 8 nC @ 12 V +20V, -10V 422 pF @ 1000 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUS300N10S5N015TATMA1

IAUS300N10S5N015TATMA1

MOSFET N-CH 100V 300A HDSOP-16-2

Infineon Technologies
2,964 -

RFQ

IAUS300N10S5N015TATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tj) 6V, 10V 1.5mOhm @ 100A, 10V 3.8V @ 275µA 216 nC @ 10 V ±20V 16011 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT60R090CFD7XTMA1

IPT60R090CFD7XTMA1

MOSFET N-CH 600V 28A 8HSOF

Infineon Technologies
1,925 -

RFQ

IPT60R090CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 90mOhm @ 9.3A, 10V 4.5V @ 470µA 42 nC @ 10 V ±20V 1752 pF @ 400 V - 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R099CFD7AATMA1

IPB65R099CFD7AATMA1

MOSFET N-CH 650V 24A TO263-3

Infineon Technologies
370 -

RFQ

IPB65R099CFD7AATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 99mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB60R045P7ATMA1

IPB60R045P7ATMA1

MOSFET N-CH 600V 61A TO263-3-2

Infineon Technologies
336 -

RFQ

IPB60R045P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) 10V 45mOhm @ 22.5A, 10V 4V @ 1.08mA 90 nC @ 10 V ±20V 3891 pF @ 400 V - 201W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB200N25N3GATMA1

IPB200N25N3GATMA1

MOSFET N-CH 250V 64A D2PAK

Infineon Technologies
722 -

RFQ

IPB200N25N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 64A (Tc) 10V 20mOhm @ 64A, 10V 4V @ 270µA 86 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPDD60R055CFD7XTMA1

IPDD60R055CFD7XTMA1

MOSFET N-CH 600V 52A HDSOP-10

Infineon Technologies
1,101 -

RFQ

IPDD60R055CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) - 55mOhm @ 15.1A, 10V 4.5V @ 760µA 67 nC @ 10 V ±20V 2724 pF @ 400 V - 329W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R065C7ATMA2

IPB65R065C7ATMA2

MOSFET N-CH 650V 33A TO263-3

Infineon Technologies
834 -

RFQ

IPB65R065C7ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 65mOhm @ 17.1A, 10V 4.5V @ 200µA 64 nC @ 10 V ±20V 3020 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB60R040CFD7ATMA1

IPB60R040CFD7ATMA1

MOSFET N-CH 650V 50A TO263-3-2

Infineon Technologies
713 -

RFQ

IPB60R040CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4.5V @ 1.25mA 108 nC @ 10 V ±20V 4351 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPDD60R045CFD7XTMA1

IPDD60R045CFD7XTMA1

MOSFET N-CH 600V 61A HDSOP-10

Infineon Technologies
1,332 -

RFQ

IPDD60R045CFD7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) - 45mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3194 pF @ 400 V - 379W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R045C7ATMA2

IPB65R045C7ATMA2

MOSFET N-CH 650V 46A TO263-3

Infineon Technologies
473 -

RFQ

IPB65R045C7ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT65R033G7XTMA1

IPT65R033G7XTMA1

MOSFET N-CH 650V 69A 8HSOF

Infineon Technologies
911 -

RFQ

IPT65R033G7XTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 69A (Tc) 10V 33mOhm @ 28.9A, 10V 4V @ 1.44mA 110 nC @ 10 V ±20V 5000 pF @ 400 V - 391W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLML2402TRPBF

IRLML2402TRPBF

MOSFET N-CH 20V 1.2A SOT23

Infineon Technologies
1,781 -

RFQ

IRLML2402TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 2.7V, 4.5V 250mOhm @ 930mA, 4.5V 700mV @ 250µA (Min) 3.9 nC @ 4.5 V ±12V 110 pF @ 15 V - 540mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL540NPBF

IRL540NPBF

MOSFET N-CH 100V 36A TO220AB

Infineon Technologies
13,421 -

RFQ

IRL540NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF5210STRLPBF

IRF5210STRLPBF

MOSFET P-CH 100V 38A D2PAK

Infineon Technologies
3,633 -

RFQ

IRF5210STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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