Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9Z24NSTRLPBF

IRF9Z24NSTRLPBF

MOSFET P-CH 55V 12A D2PAK

Infineon Technologies
1,540 -

RFQ

IRF9Z24NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R650CEAUMA1

IPD65R650CEAUMA1

MOSFET N-CH 650V 7A TO252-3

Infineon Technologies
2,499 -

RFQ

IPD65R650CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPTG044N15NM5ATMA1

IPTG044N15NM5ATMA1

TRENCH >=100V

Infineon Technologies
3,214 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R163M1HXUMA1

IMT65R163M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies
3,032 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPD04N03LB G

IPD04N03LB G

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies
1,144 -

RFQ

IPD04N03LB G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 4.1mOhm @ 50A, 10V 2V @ 70µA 40 nC @ 5 V ±20V 5200 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPN70R360P7SATMA1

IPN70R360P7SATMA1

MOSFET N-CH 700V 12.5A SOT223

Infineon Technologies
2,998 -

RFQ

IPN70R360P7SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 7.2W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SPP08N50C3XKSA1

SPP08N50C3XKSA1

SPP08N50 - 800V COOLMOS N-CHANNE

Infineon Technologies
22,195 -

RFQ

SPP08N50C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1

MOSFET N-CH 80V 40A TSDSON

Infineon Technologies
2,709 -

RFQ

BSZ110N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Tc) 6V, 10V 11mOhm @ 20A, 10V 3.8V @ 22µA 18.5 nC @ 10 V ±20V 1300 pF @ 40 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7420TRPBF

IRF7420TRPBF

MOSFET P-CH 12V 11.5A 8SO

Infineon Technologies
2,622 -

RFQ

IRF7420TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 12 V 11.5A (Tc) 1.8V, 4.5V 14mOhm @ 11.5A, 4.5V 900mV @ 250µA 38 nC @ 4.5 V ±8V 3529 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD70R360P7SAUMA1

IPD70R360P7SAUMA1

MOSFET N-CH 700V 12.5A TO252-3

Infineon Technologies
1,010 -

RFQ

IPD70R360P7SAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 12.5A (Tc) 10V 360mOhm @ 3A, 10V 3.5V @ 150µA 16.4 nC @ 10 V ±16V 517 pF @ 400 V - 59.4W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFR540ZTRLPBF

IRFR540ZTRLPBF

MOSFET N-CH 100V 35A DPAK

Infineon Technologies
640 -

RFQ

IRFR540ZTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 28.5mOhm @ 21A, 10V 4V @ 50µA 59 nC @ 10 V ±20V 1690 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA50R299CPXKSA1079

IPA50R299CPXKSA1079

IPA50R299 - 500V COOLMOS N-CHANN

Infineon Technologies
13,500 -

RFQ

IPA50R299CPXKSA1079

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI147N12N3G

IPI147N12N3G

IPI147N12 - 12V-300V N-CHANNEL P

Infineon Technologies
14,889 -

RFQ

IPI147N12N3G

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 14.7mOhm @ 56A, 10V 4V @ 61µA 49 nC @ 10 V ±20V 3220 pF @ 60 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISC036N04NM5ATMA1

ISC036N04NM5ATMA1

40V 3.6M OPTIMOS MOSFET SUPERSO8

Infineon Technologies
3,728 -

RFQ

ISC036N04NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 98A (Tc) 7V, 10V 3.6mOhm @ 49A, 10V 3.4V @ 23µA 28 nC @ 10 V ±20V 2000 pF @ 20 V - 3W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R600E6

IPD60R600E6

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies
1,988 -

RFQ

IPD60R600E6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC196N10NSGATMA1

BSC196N10NSGATMA1

MOSFET N-CH 100V 8.5A/45A TDSON

Infineon Technologies
31,448 -

RFQ

BSC196N10NSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 8.5A (Ta), 45A (Tc) 10V 19.6mOhm @ 45A, 10V 4V @ 42µA 34 nC @ 10 V ±20V 2300 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD03N03LA G

IPD03N03LA G

MOSFET N-CH 25V 90A TO252-3

Infineon Technologies
1,047 -

RFQ

IPD03N03LA G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 90A (Tc) 4.5V, 10V 3.2mOhm @ 60A, 10V 2V @ 70µA 41 nC @ 5 V ±20V 5200 pF @ 15 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPW47N60CFDFKSA1

SPW47N60CFDFKSA1

MOSFET N-CH 600V 46A TO247-3

Infineon Technologies
2,419 -

RFQ

SPW47N60CFDFKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 46A (Tc) 10V 83mOhm @ 29A, 10V 5V @ 2.9mA 322 nC @ 10 V ±20V 7700 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW47N65C3FKSA1

SPW47N65C3FKSA1

MOSFET N-CH 650V 47A TO247-3

Infineon Technologies
3,372 -

RFQ

SPW47N65C3FKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 70mOhm @ 30A, 10V 3.9V @ 2.7mA 255 nC @ 10 V ±20V 7000 pF @ 25 V - 415W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC0901NSATMA1

BSC0901NSATMA1

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies
4,740 -

RFQ

BSC0901NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 100A (Tc) 4.5V, 10V 1.9mOhm @ 30A, 10V 2.2V @ 250µA 44 nC @ 10 V ±20V 2800 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 8399 Record«Prev1... 378379380381382383384385...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario