Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR15N20DTRPBF

IRFR15N20DTRPBF

MOSFET N-CH 200V 17A DPAK

Infineon Technologies
30,872 -

RFQ

IRFR15N20DTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 10V 165mOhm @ 10A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 910 pF @ 25 V - 3W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR6215TRLPBF

IRFR6215TRLPBF

MOSFET P-CH 150V 13A DPAK

Infineon Technologies
3,271 -

RFQ

IRFR6215TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL520NSTRLPBF

IRL520NSTRLPBF

MOSFET N-CH 100V 10A D2PAK

Infineon Technologies
2,816 -

RFQ

IRL520NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3915TRPBF

IRLR3915TRPBF

MOSFET N-CH 55V 30A DPAK

Infineon Technologies
13,326 -

RFQ

IRLR3915TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 5V, 10V 14mOhm @ 30A, 10V 3V @ 250µA 92 nC @ 10 V ±16V 1870 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R280P7SAUMA1

IPD60R280P7SAUMA1

MOSFET N-CH 600V 12A TO252-3

Infineon Technologies
8,819 -

RFQ

IPD60R280P7SAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 53W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFH8330TRPBF

IRFH8330TRPBF

MOSFET N-CH 30V 17A/56A PQFN

Infineon Technologies
2,085 -

RFQ

IRFH8330TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 56A (Tc) 4.5V, 10V 6.6mOhm @ 20A, 10V 2.35V @ 25µA 20 nC @ 10 V ±20V 1450 pF @ 25 V - 3.3W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ24NPBF

IRFZ24NPBF

MOSFET N-CH 55V 17A TO220AB

Infineon Technologies
26,488 -

RFQ

IRFZ24NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ34NSTRLPBF

IRLZ34NSTRLPBF

MOSFET N-CH 55V 30A D2PAK

Infineon Technologies
74,828 -

RFQ

IRLZ34NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4V, 10V 35mOhm @ 16A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z24NPBF

IRF9Z24NPBF

MOSFET P-CH 55V 12A TO220AB

Infineon Technologies
10,688 -

RFQ

IRF9Z24NPBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPD04N50C3ATMA1

SPD04N50C3ATMA1

MOSFET N-CH 500V 4.5A TO252-3

Infineon Technologies
7,890 -

RFQ

SPD04N50C3ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 22 nC @ 10 V ±20V 470 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R280CEAUMA1

IPD50R280CEAUMA1

MOSFET N-CH 550V 13A TO252

Infineon Technologies
3,574 -

RFQ

IPD50R280CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 550 V 13A (Ta) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V - 119W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR4104TRPBF

IRFR4104TRPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
15,448 -

RFQ

IRFR4104TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU024NPBF

IRLU024NPBF

MOSFET N-CH 55V 17A IPAK

Infineon Technologies
2,947 -

RFQ

IRLU024NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ24NPBF

IRLZ24NPBF

MOSFET N-CH 55V 18A TO220AB

Infineon Technologies
18,506 -

RFQ

IRLZ24NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC072N08NS5ATMA1

BSC072N08NS5ATMA1

MOSFET N-CH 80V 74A TDSON

Infineon Technologies
32,505 -

RFQ

BSC072N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 74A (Tc) 6V, 10V 7.2mOhm @ 37A, 10V 3.8V @ 36µA 29 nC @ 10 V ±20V 2100 pF @ 40 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60N10S4L12ATMA1

IPD60N10S4L12ATMA1

MOSFET N-CH 100V 60A TO252-3

Infineon Technologies
87,473 -

RFQ

IPD60N10S4L12ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 12mOhm @ 60A, 10V 2.1V @ 46µA 49 nC @ 10 V ±16V 3170 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU120NPBF

IRFU120NPBF

MOSFET N-CH 100V 9.4A IPAK

Infineon Technologies
8,562 -

RFQ

IRFU120NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL520NPBF

IRL520NPBF

MOSFET N-CH 100V 10A TO220AB

Infineon Technologies
12,649 -

RFQ

IRL520NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU120NPBF

IRLU120NPBF

MOSFET N-CH 100V 10A IPAK

Infineon Technologies
2,355 -

RFQ

IRLU120NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34NPBF

IRFZ34NPBF

MOSFET N-CH 55V 29A TO220AB

Infineon Technologies
6,690 -

RFQ

IRFZ34NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 302303304305306307308309...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario