Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC0902NSIATMA1

BSC0902NSIATMA1

MOSFET N-CH 30V 23A/100A TDSON

Infineon Technologies
8,262 -

RFQ

BSC0902NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 100A (Tc) 4.5V, 10V 2.8mOhm @ 30A, 10V 2V @ 10mA 32 nC @ 10 V ±20V 1500 pF @ 15 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP296NL6327HTSA1

BSP296NL6327HTSA1

MOSFET N-CH 100V 1.2A SOT223-4

Infineon Technologies
2,722 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.2A (Ta) 4.5V, 10V 600mOhm @ 1.2A, 10V 1.8V @ 100µA 6.7 nC @ 10 V ±20V 152.7 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD031N03LGATMA1

IPD031N03LGATMA1

MOSFET N-CH 30V 90A TO252-3

Infineon Technologies
5,000 -

RFQ

IPD031N03LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 3.1mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU9024NPBF

IRFU9024NPBF

MOSFET P-CH 55V 11A IPAK

Infineon Technologies
2,047 -

RFQ

IRFU9024NPBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLR2703TRPBF

IRLR2703TRPBF

MOSFET N-CH 30V 23A DPAK

Infineon Technologies
13,341 -

RFQ

IRLR2703TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Tc) 4V, 10V 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0904NSIATMA1

BSZ0904NSIATMA1

MOSFET N-CH 30V 18A/40A TSDSON

Infineon Technologies
5,000 -

RFQ

BSZ0904NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 40A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 2V @ 250µA 11 nC @ 4.5 V ±20V 1463 pF @ 15 V Schottky Diode (Body) 2.1W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1

MOSFET N-CH 600V 3.2A TO252-3

Infineon Technologies
3,176 -

RFQ

IPD60R1K4C6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3910TRLPBF

IRFR3910TRLPBF

MOSFET N-CH 100V 16A DPAK

Infineon Technologies
3,020 -

RFQ

IRFR3910TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5505TRLPBF

IRFR5505TRLPBF

MOSFET P-CH 55V 18A DPAK

Infineon Technologies
3,328 -

RFQ

IRFR5505TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50N06S4L12ATMA2

IPD50N06S4L12ATMA2

MOSFET N-CH 60V 50A TO252-31

Infineon Technologies
3,443 -

RFQ

IPD50N06S4L12ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 2.2V @ 20µA 40 nC @ 10 V ±16V 2890 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC042N03LSGATMA1

BSC042N03LSGATMA1

MOSFET N-CH 30V 20A/93A TDSON

Infineon Technologies
3,764 -

RFQ

BSC042N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 93A (Tc) 4.5V, 10V 4.2mOhm @ 30A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 3500 pF @ 15 V - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC059N04LS6ATMA1

BSC059N04LS6ATMA1

MOSFET N-CH 40V 17A TDSON

Infineon Technologies
48,373 -

RFQ

BSC059N04LS6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 17A (Ta), 49A (Tc), 59A (Tc) 4.5V, 10V 5.9mOhm @ 50A, 10V 2.3V @ 250µA 9.4 nC @ 10 V ±20V 830 pF @ 20 V - 3W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7833TRPBF

IRLR7833TRPBF

MOSFET N-CH 30V 140A DPAK

Infineon Technologies
8,074 -

RFQ

IRLR7833TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC0902NSATMA1

BSC0902NSATMA1

MOSFET N-CH 30V 24A/100A TDSON

Infineon Technologies
9,900 -

RFQ

BSC0902NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 100A (Tc) 4.5V, 10V 2.6mOhm @ 30A, 10V 2.2V @ 250µA 26 nC @ 10 V ±20V 1700 pF @ 15 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50R380CEAUMA1

IPD50R380CEAUMA1

MOSFET N-CH 500V 14.1A TO252-3

Infineon Technologies
36,921 -

RFQ

IPD50R380CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 14.1A (Tc) 13V 380mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8 nC @ 10 V ±20V 584 pF @ 100 V Super Junction 98W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD80R1K4P7ATMA1

IPD80R1K4P7ATMA1

MOSFET N-CH 800V 4A TO252

Infineon Technologies
6,866 -

RFQ

IPD80R1K4P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 700µA 10 nC @ 10 V ±20V 250 pF @ 500 V Super Junction 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R400CEAUMA1

IPD65R400CEAUMA1

MOSFET N-CH 650V 15.1A TO252-3

Infineon Technologies
1,042 -

RFQ

IPD65R400CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15.1A (Tc) 10V 400mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V Super Junction 118W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3711ZTRPBF

IRFR3711ZTRPBF

MOSFET N-CH 20V 93A DPAK

Infineon Technologies
3,968 -

RFQ

IRFR3711ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 93A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2160 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8729TRLPBF

IRLR8729TRLPBF

MOSFET N-CH 30V 58A D-PAK

Infineon Technologies
2,418 -

RFQ

IRLR8729TRLPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8729TRPBF

IRLR8729TRPBF

MOSFET N-CH 30V 58A DPAK

Infineon Technologies
2,971 -

RFQ

IRLR8729TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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