Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFH8334TRPBF

IRFH8334TRPBF

MOSFET N-CH 30V 14A/44A PQFN

Infineon Technologies
3,652 -

RFQ

IRFH8334TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 44A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V 2.35V @ 25µA 15 nC @ 10 V ±20V 1180 pF @ 10 V - 3.2W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC120N03MSGATMA1

BSC120N03MSGATMA1

MOSFET N-CH 30V 11A/39A TDSON

Infineon Technologies
12,500 -

RFQ

BSC120N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 39A (Tc) 4.5V, 10V 12mOhm @ 30A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 1500 pF @ 15 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLMS6802TRPBF

IRLMS6802TRPBF

MOSFET P-CH 20V 5.6A MICRO6

Infineon Technologies
905 -

RFQ

IRLMS6802TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 20 V 5.6A (Ta) 2.5V, 4.5V 50mOhm @ 5.1A, 4.5V 1.2V @ 250µA 16 nC @ 5 V ±12V 1079 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPI70N12S3L12AKSA1

IPI70N12S3L12AKSA1

MOSFET N-CHANNEL_100+

Infineon Technologies
19,000 -

RFQ

IPI70N12S3L12AKSA1

Ficha técnica

Bulk,Tube * Obsolete - - - - - - - - - - - - - -
IPP50N12S3L15AKSA1

IPP50N12S3L15AKSA1

MOSFET N-CHANNEL_100+

Infineon Technologies
12,000 -

RFQ

IPP50N12S3L15AKSA1

Ficha técnica

Bulk,Tube * Obsolete - - - - - - - - - - - - - -
IPP70N12S3L12AKSA1

IPP70N12S3L12AKSA1

MOSFET N-CHANNEL_100+

Infineon Technologies
39,177 -

RFQ

IPP70N12S3L12AKSA1

Ficha técnica

Bulk,Tube * Obsolete - - - - - - - - - - - - - -
IPI45N06S4L08AKSA3

IPI45N06S4L08AKSA3

MOSFET N-CHANNEL_55/60V

Infineon Technologies
28,500 -

RFQ

IPI45N06S4L08AKSA3

Ficha técnica

Bulk,Tube * Obsolete - - - - - - - - - - - - - -
IPI90N06S404AKSA2

IPI90N06S404AKSA2

MOSFET N-CHANNEL_55/60V

Infineon Technologies
25,000 -

RFQ

IPI90N06S404AKSA2

Ficha técnica

Bulk,Tube * Obsolete - - - - - - - - - - - - - -
IPP80N06S405AKSA2

IPP80N06S405AKSA2

MOSFET N-CHANNEL_55/60V

Infineon Technologies
14,500 -

RFQ

IPP80N06S405AKSA2

Ficha técnica

Bulk,Tube * Obsolete - - - - - - - - - - - - - -
IPC302N15N3X7SA1

IPC302N15N3X7SA1

MV POWER MOS

Infineon Technologies
3,083 -

RFQ

IPC302N15N3X7SA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPT043N15N5ATMA1

IPT043N15N5ATMA1

MV POWER MOS

Infineon Technologies
2,156 -

RFQ

IPT043N15N5ATMA1

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
BSP612PH6327XTSA1

BSP612PH6327XTSA1

SMALL SIGNAL+P-CH

Infineon Technologies
3,529 -

RFQ

BSP612PH6327XTSA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Obsolete - - - 3A (Ta) - - - - - - - - - -
BSS340NWH6327XTSA1

BSS340NWH6327XTSA1

SMALL SIGNAL+P-CH

Infineon Technologies
15,000 -

RFQ

BSS340NWH6327XTSA1

Ficha técnica

Tape & Reel (TR),Bulk * Obsolete - - - - - - - - - - - - - -
SISC624P06X3MA1

SISC624P06X3MA1

SMALL SIGNAL+P-CH

Infineon Technologies
3,177 -

RFQ

SISC624P06X3MA1

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
BSL202SNH6327XTSA1

BSL202SNH6327XTSA1

MOSFET N-CH 20V 7.5A TSOP-6

Infineon Technologies
3,780 -

RFQ

BSL202SNH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 2.5V, 4.5V 22mOhm @ 7.5A, 4.5V 1.2V @ 30µA 8.7 nC @ 10 V ±12V 1147 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP92PH6327XTSA1

BSP92PH6327XTSA1

MOSFET P-CH 250V 260MA SOT223-4

Infineon Technologies
3,502 -

RFQ

BSP92PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 250 V 260mA (Ta) 2.8V, 10V 12Ohm @ 260mA, 10V 2V @ 130µA 5.4 nC @ 10 V ±20V 104 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS126H6906XTSA1

BSS126H6906XTSA1

MOSFET N-CH 600V 21MA SOT23-3

Infineon Technologies
18,177 -

RFQ

BSS126H6906XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 21mA (Ta) 0V, 10V 500Ohm @ 16mA, 10V 1.6V @ 8µA 2.1 nC @ 5 V ±20V 28 pF @ 25 V Depletion Mode 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS159NH6906XTSA1

BSS159NH6906XTSA1

MOSFET N-CH 60V 230MA SOT23-3

Infineon Technologies
42,262 -

RFQ

BSS159NH6906XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 0V, 10V 3.5Ohm @ 160mA, 10V 2.4V @ 26µA 2.9 nC @ 5 V ±20V 44 pF @ 25 V Depletion Mode 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD090N03LGATMA1

IPD090N03LGATMA1

MOSFET N-CH 30V 40A TO252-3

Infineon Technologies
57,696 -

RFQ

IPD090N03LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1600 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2705TRLPBF

IRLR2705TRLPBF

MOSFET N-CH 55V 28A DPAK

Infineon Technologies
2,713 -

RFQ

IRLR2705TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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