Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTM24N50L

IXTM24N50L

POWER MOSFET TO-3

IXYS
2,201 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXTM35N30

IXTM35N30

MOSFET N-CH 300V 35A TO204AE

IXYS
3,871 -

RFQ

Tube GigaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 35A (Tc) 10V 100mOhm @ 17.5A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 4600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTM40N30

IXTM40N30

MOSFET N-CH 300V 40A TO204AE

IXYS
2,750 -

RFQ

IXTM40N30

Ficha técnica

Tube GigaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 40A (Tc) 10V 88mOhm @ 20A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 4600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTM50N20

IXTM50N20

MOSFET N-CH 200V 50A TO204AE

IXYS
2,139 -

RFQ

IXTM50N20

Ficha técnica

Tube GigaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 45mOhm @ 25A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 4600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTM5N100

IXTM5N100

MOSFET N-CH 1000V 5A TO204AA

IXYS
2,445 -

RFQ

IXTM5N100

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 5A (Tc) 10V 2.4Ohm @ 2.5A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTM5N100A

IXTM5N100A

MOSFET N-CH 1000V 5A TO204AA

IXYS
3,808 -

RFQ

IXTM5N100A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 5A (Tc) 10V 2Ohm @ 2.5A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTM67N10

IXTM67N10

MOSFET N-CH 100V 67A TO204AE

IXYS
3,705 -

RFQ

IXTM67N10

Ficha técnica

Tube GigaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 67A (Tc) 10V 25mOhm @ 33.5A, 10V 4V @ 4mA 260 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTM6N90A

IXTM6N90A

MOSFET N-CH 900V 6A TO204AA

IXYS
3,100 -

RFQ

IXTM6N90A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTM9226

IXTM9226

POWER MOSFET TO-3

IXYS
2,384 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXFP16N50P

IXFP16N50P

MOSFET N-CH 500V 16A TO220AB

IXYS
300 -

RFQ

IXFP16N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 400mOhm @ 8A, 10V 5.5V @ 2.5mA 43 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ44P15T

IXTQ44P15T

MOSFET P-CH 150V 44A TO3P

IXYS
112 -

RFQ

IXTQ44P15T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 65mOhm @ 500mA, 10V 4V @ 250µA 175 nC @ 10 V ±15V 13400 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ26N50P

IXTQ26N50P

MOSFET N-CH 500V 26A TO3P

IXYS
237 -

RFQ

IXTQ26N50P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5.5V @ 250µA 65 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA24P085T

IXTA24P085T

MOSFET P-CH 85V 24A TO263

IXYS
5,814 -

RFQ

IXTA24P085T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 85 V 24A (Tc) 10V 65mOhm @ 12A, 10V 4.5V @ 250µA 41 nC @ 10 V ±15V 2090 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP8N65X2M

IXFP8N65X2M

MOSFET N-CH 650V 8A TO220

IXYS
2,172 -

RFQ

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 450mOhm @ 4A, 10V 5V @ 250µA 11 nC @ 10 V ±30V 790 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTD2N60P-1J

IXTD2N60P-1J

MOSFET N-CH 600V 2A DIE

IXYS
2,756 -

RFQ

Bulk PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5.1Ohm @ 1A, 10V 5V @ 250µA 7 nC @ 10 V ±30V 240 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTD3N50P-2J

IXTD3N50P-2J

MOSFET N-CH 500V 3A DIE

IXYS
3,266 -

RFQ

Bulk PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 2Ohm @ 1.5A, 10V 5.5V @ 50µA 9.3 nC @ 10 V ±30V 409 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTD3N60P-2J

IXTD3N60P-2J

MOSFET N-CH 600V 3A DIE

IXYS
2,064 -

RFQ

Bulk PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3A (Tc) 10V 2.9Ohm @ 1.5A, 10V 5.5V @ 50µA 9.8 nC @ 10 V ±30V 411 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTD4N80P-3J

IXTD4N80P-3J

MOSFET N-CH 800V 3.6A DIE

IXYS
2,518 -

RFQ

Bulk PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3.6A (Tc) 10V 3.4Ohm @ 1.8A, 10V 5.5V @ 100µA 14.2 nC @ 10 V ±30V 750 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP28N15P

IXTP28N15P

MOSFET N-CH TO-220

IXYS
2,400 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXTP200N055T2

IXTP200N055T2

MOSFET N-CH 55V 200A TO220AB

IXYS
128 -

RFQ

IXTP200N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 200A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6800 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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