Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFR20N80Q

IXFR20N80Q

MOSFET N-CH ISOPLUS247

IXYS
3,955 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXFR21N50Q

IXFR21N50Q

MOSFET N-CH ISOPLUS247

IXYS
2,213 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXFR32N50

IXFR32N50

MOSFET N-CH ISOPLUS247

IXYS
3,201 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXFT74N20Q

IXFT74N20Q

MOSFET N-CH TO268

IXYS
3,367 -

RFQ

IXFT74N20Q

Ficha técnica

Tube - Obsolete - - - - - - - - - - - - - -
IXFX20N80Q

IXFX20N80Q

MOSFET N-CH 800V 20A PLUS247-3

IXYS
3,230 -

RFQ

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 420mOhm @ 10A, 10V 4.5V @ 4mA 200 nC @ 10 V ±20V 5100 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX30N50

IXFX30N50

MOSFET N-CH PLUS247

IXYS
2,048 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXFX32N48Q

IXFX32N48Q

MOSFET N-CH PLUS247

IXYS
2,551 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXFX52N30Q

IXFX52N30Q

MOSFET N-CH 300V 52A PLUS247-3

IXYS
2,612 -

RFQ

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) - - - - - - - 360W (Tc) 150°C (TJ) Through Hole
IXFX60N25Q

IXFX60N25Q

MOSFET N-CH PLUS247

IXYS
3,409 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXFX80N15Q

IXFX80N15Q

MOSFET N-CH PLUS247

IXYS
3,205 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IXTH21N50Q

IXTH21N50Q

MOSFET N-CH 500V 21A TO247AD

IXYS
3,800 -

RFQ

IXTH21N50Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 250mOhm @ 10.5A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
T-FD28N50Q-72

T-FD28N50Q-72

MOSFET N-CHANNEL

IXYS
3,386 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IXFT1874 TR

IXFT1874 TR

MOSFET N-CH TO268

IXYS
3,528 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
IXFT26N50Q TR

IXFT26N50Q TR

MOSFET N-CH 500V 26A TO268

IXYS
3,483 -

RFQ

IXFT26N50Q TR

Ficha técnica

Tape & Reel (TR) HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 200mOhm @ 13A, 10V 4.5V @ 4mA 95 nC @ 10 V ±20V 3900 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT40N30Q TR

IXFT40N30Q TR

MOSFET N-CH 300V 40A TO268

IXYS
2,829 -

RFQ

IXFT40N30Q TR

Ficha técnica

Tape & Reel (TR) HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 40A (Tc) 10V 85mOhm @ 20A, 10V 4V @ 4mA 140 nC @ 10 V ±20V 3560 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT52N30Q TRL

IXFT52N30Q TRL

MOSFET N-CH 300V 52A TO268

IXYS
3,696 -

RFQ

IXFT52N30Q TRL

Ficha técnica

Tape & Reel (TR) HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 60mOhm @ 26A, 10V 4V @ 4mA 150 nC @ 10 V ±20V 5300 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT58N20Q TRL

IXFT58N20Q TRL

MOSFET N-CH 200V 58A TO268

IXYS
3,994 -

RFQ

IXFT58N20Q TRL

Ficha técnica

Tape & Reel (TR) HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 58A (Tc) 10V 40mOhm @ 29A, 10V 4V @ 4mA 140 nC @ 10 V ±20V 3600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA110N12T2

IXTA110N12T2

MOSFET N-CH 120V 110A TO263

IXYS
2,679 -

RFQ

IXTA110N12T2

Ficha técnica

Tube TrenchT2™ Obsolete N-Channel MOSFET (Metal Oxide) 120 V 110A (Tc) 10V 14mOhm @ 55A, 10V 4.5V @ 250µA 120 nC @ 10 V ±20V 6570 pF @ 25 V - 517W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP110N12T2

IXTP110N12T2

MOSFET N-CH 120V 110A TO220AB

IXYS
2,675 -

RFQ

IXTP110N12T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 120 V 110A (Tc) 10V 14mOhm @ 55A, 10V 4.5V @ 250µA 120 nC @ 10 V ±20V 6570 pF @ 25 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP32P05T

IXTP32P05T

MOSFET P-CH 50V 32A TO220AB

IXYS
3,614 -

RFQ

IXTP32P05T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 32A (Tc) 10V 39mOhm @ 500mA, 10V 4.5V @ 250µA 46 nC @ 10 V ±15V 1975 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 2427 Record«Prev1... 7475767778798081...122Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario