Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFA10N60P

IXFA10N60P

MOSFET N-CH 600V 10A TO263

IXYS
108 -

RFQ

IXFA10N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 740mOhm @ 5A, 10V 5.5V @ 1mA 32 nC @ 10 V ±30V 1610 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA12N65X2

IXFA12N65X2

MOSFET N-CH 650V 12A TO263AA

IXYS
204 -

RFQ

IXFA12N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 310mOhm @ 6A, 10V 5V @ 250µA 18.5 nC @ 10 V ±30V 1134 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP36N20X3

IXFP36N20X3

MOSFET N-CH 200V 36A TO220

IXYS
101 -

RFQ

IXFP36N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1425 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP16N50P

IXTP16N50P

MOSFET N-CH 500V 16A TO220AB

IXYS
105 -

RFQ

IXTP16N50P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 400mOhm @ 8A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY14N60X2

IXTY14N60X2

MOSFET N-CH 600V 14A TO252

IXYS
130 -

RFQ

IXTY14N60X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 250mOhm @ 7A, 10V 4.5V @ 250µA 16.7 nC @ 10 V ±30V 740 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ50N20P

IXTQ50N20P

MOSFET N-CH 200V 50A TO3P

IXYS
169 -

RFQ

IXTQ50N20P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 60mOhm @ 50A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ36N30P

IXTQ36N30P

MOSFET N-CH 300V 36A TO3P

IXYS
128 -

RFQ

IXTQ36N30P

Ficha técnica

Tube PolarHT™ Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 5.5V @ 250µA 70 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP14N60X2

IXTP14N60X2

MOSFET N-CH 600V 14A TO220

IXYS
249 -

RFQ

IXTP14N60X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 250mOhm @ 7A, 10V 4.5V @ 250µA 16.7 nC @ 10 V ±30V 740 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP38N30X3

IXFP38N30X3

MOSFET N-CH 300V 38A TO220

IXYS
258 -

RFQ

IXFP38N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 50mOhm @ 19A, 10V 4.5V @ 1mA 35 nC @ 10 V ±20V 2240 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ22N50P

IXTQ22N50P

MOSFET N-CH 500V 22A TO3P

IXYS
2,329 -

RFQ

IXTQ22N50P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 270mOhm @ 11A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 2630 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH22N60P3

IXFH22N60P3

MOSFET N-CH 600V 22A TO247AD

IXYS
174 -

RFQ

IXFH22N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 360mOhm @ 11A, 10V 5V @ 1.5mA 38 nC @ 10 V ±30V 2600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH28N60P3

IXFH28N60P3

MOSFET N-CH 600V 28A TO247AD

IXYS
300 -

RFQ

IXFH28N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 260mOhm @ 14A, 10V 5V @ 2.5mA 50 nC @ 10 V ±30V 3560 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH30N60X

IXFH30N60X

MOSFET N-CH 600V 30A TO247

IXYS
151 -

RFQ

IXFH30N60X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 155mOhm @ 15A, 10V 4.5V @ 4mA 56 nC @ 10 V ±30V 2270 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH14N85X

IXFH14N85X

MOSFET N-CH 850V 14A TO247-3

IXYS
245 -

RFQ

IXFH14N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 14A (Tc) 10V 550mOhm @ 500mA, 10V 5.5V @ 1mA 30 nC @ 10 V ±30V 1043 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP32P20T

IXTP32P20T

MOSFET P-CH 200V 32A TO220AB

IXYS
300 -

RFQ

IXTP32P20T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 130mOhm @ 16A, 10V 4V @ 250µA 185 nC @ 10 V ±15V 14500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH12N100P

IXFH12N100P

MOSFET N-CH 1000V 12A TO247AD

IXYS
196 -

RFQ

IXFH12N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 1.05Ohm @ 6A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 4080 pF @ 25 V - 463W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH20N80P

IXFH20N80P

MOSFET N-CH 800V 20A TO247AD

IXYS
194 -

RFQ

IXFH20N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 520mOhm @ 10A, 10V 5V @ 4mA 86 nC @ 10 V ±30V 4685 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH46N65X2

IXFH46N65X2

MOSFET N-CH 650V 46A TO247

IXYS
2,697 -

RFQ

IXFH46N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 76mOhm @ 23A, 10V 5.5V @ 4mA 75 nC @ 10 V ±30V 4810 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH50N60P3

IXFH50N60P3

MOSFET N-CH 600V 50A TO247AD

IXYS
1,587 -

RFQ

IXFH50N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 145mOhm @ 500mA, 10V 5V @ 4mA 94 nC @ 10 V ±30V 6300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ69N30P

IXTQ69N30P

MOSFET N-CH 300V 69A TO3P

IXYS
260 -

RFQ

IXTQ69N30P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 69A (Tc) 10V 49mOhm @ 500mA, 10V 5V @ 250µA 180 nC @ 10 V ±20V 4960 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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