Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK27N80Q

IXFK27N80Q

MOSFET N-CH 800V 27A TO264AA

IXYS
183 -

RFQ

IXFK27N80Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) 10V 320mOhm @ 500mA, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 7600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY02N120P-TRL

IXTY02N120P-TRL

MOSFET N-CH 1200V 200MA TO252

IXYS
2,688 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 200mA (Tc) 10V 75Ohm @ 100mA, 10V 4V @ 100µA 4.7 nC @ 10 V ±20V 104 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY02N50D-TRL

IXTY02N50D-TRL

MOSFET N-CH

IXYS
3,726 -

RFQ

IXTY02N50D-TRL

Ficha técnica

Tape & Reel (TR) Depletion Active - - - 250mA (Tj) - - - - - - - - - -
IXTY44N10T-TRL

IXTY44N10T-TRL

MOSFET N-CH 100V 44A TO252

IXYS
2,057 -

RFQ

Tape & Reel (TR) Trench Active N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 22A, 10V 4.5V @ 25µA 33 nC @ 10 V ±30V 1262 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTY1N100P-TRL

IXTY1N100P-TRL

MOSFET N-CH 1000V 1A TO252

IXYS
2,326 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1A (Tc) 10V 15Ohm @ 500mA, 10V 4.5V @ 50µA 15.5 nC @ 10 V ±20V 331 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY4N65X2-TRL

IXTY4N65X2-TRL

MOSFET N-CH 650V 4A TO252

IXYS
3,460 -

RFQ

Tape & Reel (TR) Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 850mOhm @ 2A, 10V 5V @ 250µA 8.3 nC @ 10 V ±30V 455 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY01N100-TRL

IXTY01N100-TRL

MOSFET N-CH 1000V 100MA TO252

IXYS
2,794 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1000 V 100mA (Tc) 10V 80Ohm @ 50mA, 10V 4.5V @ 25µA 6.9 nC @ 10 V ±20V 54 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY1N80P-TRL

IXTY1N80P-TRL

MOSFET N-CH 800V 1A TO252

IXYS
2,060 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 14Ohm @ 500mA, 10V 4V @ 50µA 9 nC @ 10 V ±30V 250 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA10N60P-TRL

IXFA10N60P-TRL

MOSFET N-CH 600V 10A D2-PAK

IXYS
800 -

RFQ

Tape & Reel (TR),Cut Tape (CT) HiPerFET™, Polar Active - - - - - - - - - - - - - -
IXTA1R4N100P

IXTA1R4N100P

MOSFET N-CH 1000V 1.4A TO263

IXYS
110 -

RFQ

IXTA1R4N100P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 500mA, 10V 4.5V @ 50µA 17.8 nC @ 10 V ±20V 450 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP2N100P

IXTP2N100P

MOSFET N-CH 1000V 2A TO220AB

IXYS
130 -

RFQ

IXTP2N100P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 2A (Tc) 10V 7.5Ohm @ 500mA, 10V 4.5V @ 100µA 24.3 nC @ 10 V ±20V 655 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY1R6N100D2-TRL

IXTY1R6N100D2-TRL

MOSFET N-CH 1000V 1.6A TO252

IXYS
3,829 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tj) 0V 10Ohm @ 800mA, 0V 4.5V @ 100µA 27 nC @ 5 V ±20V 645 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY48P05T

IXTY48P05T

MOSFET P-CH 50V 48A TO252

IXYS
280 -

RFQ

IXTY48P05T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 48A (Tc) 10V 30mOhm @ 24A, 10V 4.5V @ 250µA 53 nC @ 10 V ±15V 3660 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP8N65X2

IXTP8N65X2

MOSFET N-CH 650V 8A TO220

IXYS
2,739 -

RFQ

IXTP8N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 500mOhm @ 4A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 800 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA08N100D2-TRL

IXTA08N100D2-TRL

MOSFET N-CH 1000V 800MA TO263

IXYS
3,581 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tj) 0V 21Ohm @ 400mA, 0V 4V @ 25µA 14.6 nC @ 5 V ±20V 325 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA14N60P

IXTA14N60P

MOSFET N-CH 600V 14A TO263

IXYS
290 -

RFQ

IXTA14N60P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 250µA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA220N06T3

IXFA220N06T3

MOSFET N-CH 60V 220A TO263

IXYS
299 -

RFQ

IXFA220N06T3

Ficha técnica

Tube HiperFET™, TrenchT3™ Active N-Channel MOSFET (Metal Oxide) 60 V 220A (Tc) 10V 4mOhm @ 100A, 10V 4V @ 250µA 136 nC @ 10 V ±20V 8500 pF @ 25 V - 440W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP20N65X2

IXTP20N65X2

MOSFET N-CH 650V 20A TO220AB

IXYS
290 -

RFQ

IXTP20N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 185mOhm @ 10A, 10V 4.5V @ 250µA 27 nC @ 10 V ±30V 1450 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP7N80P

IXFP7N80P

MOSFET N-CH 800V 7A TO220AB

IXYS
300 -

RFQ

IXFP7N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 1.44Ohm @ 3.5A, 10V 5V @ 1mA 32 nC @ 10 V ±30V 1890 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP460P2

IXTP460P2

MOSFET N-CH 500V 24A TO220AB

IXYS
210 -

RFQ

IXTP460P2

Ficha técnica

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 270mOhm @ 12A, 10V 4.5V @ 250µA 48 nC @ 10 V ±30V 2890 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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