Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTT440N04T4HV

IXTT440N04T4HV

MOSFET N-CH 40V 440A TO268

IXYS
120 -

RFQ

IXTT440N04T4HV

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 440A (Tc) 10V 1.25mOhm @ 100A, 10V 4V @ 250µA 480 nC @ 10 V ±15V 26000 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH100N30X3

IXFH100N30X3

MOSFET N-CH 300V 100A TO247

IXYS
118 -

RFQ

IXFH100N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 100A (Tc) 10V 13.5mOhm @ 50A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7660 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ40N50L2

IXTQ40N50L2

MOSFET N-CH 500V 40A TO3P

IXYS
1,107 -

RFQ

IXTQ40N50L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 170mOhm @ 20A, 10V 4.5V @ 250µA 320 nC @ 10 V ±20V 10400 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR48N60P

IXFR48N60P

MOSFET N-CH 600V 32A ISOPLUS247

IXYS
208 -

RFQ

IXFR48N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 150mOhm @ 24A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8860 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT40N50L2

IXTT40N50L2

MOSFET N-CH 500V 40A TO268

IXYS
300 -

RFQ

IXTT40N50L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 170mOhm @ 20A, 10V 4.5V @ 250µA 320 nC @ 10 V ±20V 10400 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFK78N50P3

IXFK78N50P3

MOSFET N-CH 500V 78A TO264AA

IXYS
473 -

RFQ

IXFK78N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 78A (Tc) 10V 68mOhm @ 500mA, 10V 5V @ 4mA 147 nC @ 10 V ±30V 9900 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT32N100XHV

IXFT32N100XHV

MOSFET N-CH 1000V 32A TO268HV

IXYS
194 -

RFQ

IXFT32N100XHV

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 220mOhm @ 16A, 10V 6V @ 4mA 130 nC @ 10 V ±30V 4075 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFK26N120P

IXFK26N120P

MOSFET N-CH 1200V 26A TO264AA

IXYS
245 -

RFQ

IXFK26N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 10V 460mOhm @ 13A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 16000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN90N85X

IXFN90N85X

MOSFET N-CH 850V 90A SOT227B

IXYS
120 -

RFQ

IXFN90N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 90A (Tc) 10V 41mOhm @ 500mA, 10V 5.5V @ 8mA 340 nC @ 10 V ±30V 13300 pF @ 25 V - 1200W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFH120N30X3

IXFH120N30X3

MOSFET N-CH 300V 120A TO247

IXYS
230 -

RFQ

IXFH120N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 11mOhm @ 60A, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 1376 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN160N30T

IXFN160N30T

MOSFET N-CH 300V 130A SOT227B

IXYS
300 -

RFQ

IXFN160N30T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 130A (Tc) 10V 19mOhm @ 60A, 10V 5V @ 8mA 335 nC @ 10 V ±20V 28000 pF @ 25 V - 900W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN240N25X3

IXFN240N25X3

MOSFET N-CH 250V 240A SOT227B

IXYS
470 -

RFQ

IXFN240N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 240A (Tc) 10V 4.5mOhm @ 120A, 10V 4.5V @ 8mA 345 nC @ 10 V ±20V 23800 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFP10N60P

IXFP10N60P

MOSFET N-CH 600V 10A TO220AB

IXYS
590 -

RFQ

IXFP10N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 740mOhm @ 5A, 10V 5.5V @ 1mA 32 nC @ 10 V ±30V 1610 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ22N60P

IXTQ22N60P

MOSFET N-CH 600V 22A TO3P

IXYS
194 -

RFQ

IXTQ22N60P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 350mOhm @ 11A, 10V 5.5V @ 250µA 62 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP5N100PM

IXFP5N100PM

MOSFET N-CH 1000V 2.3A TO220

IXYS
285 -

RFQ

IXFP5N100PM

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 2.3A (Tc) 10V 2.8Ohm @ 2.5A, 10V 6V @ 250µA 33.4 nC @ 10 V ±30V 1830 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH14N80P

IXFH14N80P

MOSFET N-CH 800V 14A TO247AD

IXYS
493 -

RFQ

IXFH14N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 720mOhm @ 500mA, 10V 5.5V @ 4mA 61 nC @ 10 V ±30V 3900 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH26N100X

IXFH26N100X

MOSFET N-CH 1000V 26A TO247

IXYS
242 -

RFQ

IXFH26N100X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 320mOhm @ 13A, 10V 6V @ 4mA 113 nC @ 10 V ±30V 3290 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK48N60P

IXFK48N60P

MOSFET N-CH 600V 48A TO264AA

IXYS
200 -

RFQ

IXFK48N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 135mOhm @ 500mA, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8860 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH18N100Q3

IXFH18N100Q3

MOSFET N-CH 1000V 18A TO247AD

IXYS
217 -

RFQ

IXFH18N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 660mOhm @ 9A, 10V 6.5V @ 4mA 90 nC @ 10 V ±30V 4890 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX44N80P

IXFX44N80P

MOSFET N-CH 800V 44A PLUS247-3

IXYS
290 -

RFQ

IXFX44N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 5V @ 8mA 198 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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