Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN32N100Q3

IXFN32N100Q3

MOSFET N-CH 1000V 28A SOT227B

IXYS
3,251 -

RFQ

IXFN32N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 28A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 8mA 195 nC @ 10 V ±30V 9940 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN74N100X

IXFN74N100X

MOSFET N-CH 1000V 74A SOT227B

IXYS
2,435 -

RFQ

IXFN74N100X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 74A (Tc) 10V 66mOhm @ 37A, 10V 5.5V @ 8mA 425 nC @ 10 V ±30V 17000 pF @ 25 V - 1170W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
VMO650-01F

VMO650-01F

MOSFET N-CH 100V 690A Y3-DCB

IXYS
3,712 -

RFQ

VMO650-01F

Ficha técnica

Bulk HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 690A (Tc) 10V 1.8mOhm @ 500mA, 10V 6V @ 130mA 2300 nC @ 10 V ±20V 59000 pF @ 25 V - 2500W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
IXFN27N80

IXFN27N80

MOSFET N-CH 800V 27A SOT-227B

IXYS
3,841 -

RFQ

IXFN27N80

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) 10V, 15V 300mOhm @ 13.5A, 10V 4.5V @ 8mA 400 nC @ 10 V ±20V 9740 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFX55N50F

IXFX55N50F

MOSFET N-CH 500V 55A PLUS247-3

IXYS
2,428 -

RFQ

IXFX55N50F

Ficha técnica

Tube HiPerRF™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 55A (Tc) 10V 85mOhm @ 27.5A, 10V 5.5V @ 8mA 195 nC @ 10 V ±20V 6700 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT13N100

IXFT13N100

MOSFET N-CH 1000V 12.5A TO268

IXYS
3,883 -

RFQ

IXFT13N100

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 12.5A (Tc) 10V 900mOhm @ 500mA, 10V 4.5V @ 4mA 155 nC @ 10 V ±20V 4000 pF @ 25 V - 300W (Tc) - Surface Mount
IXTH50P085

IXTH50P085

MOSFET P-CH 85V 50A TO247

IXYS
2,074 -

RFQ

IXTH50P085

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 85 V 50A (Tc) 10V 55mOhm @ 25A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR40N50Q2

IXFR40N50Q2

MOSFET N-CH 500V 29A ISOPLUS247

IXYS
3,209 -

RFQ

IXFR40N50Q2

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 29A (Tc) 10V 170mOhm @ 20A, 10V 5V @ 4mA 110 nC @ 10 V ±30V 4200 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY1R6N50D2-TRL

IXTY1R6N50D2-TRL

MOSFET N-CH 500V 1.6A TO252AA

IXYS
2,353 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tj) 0V 2.3Ohm @ 800mA, 0V 4.5V @ 250µA 23.7 nC @ 5 V ±20V 645 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY02N120P

IXTY02N120P

MOSFET N-CH 1200V 200MA TO252

IXYS
3,321 -

RFQ

IXTY02N120P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 200mA (Tc) 10V 75Ohm @ 500mA, 10V 4V @ 100µA 4.7 nC @ 10 V ±20V 104 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY08N50D2

IXTY08N50D2

MOSFET N-CH 500V 800MA TO252

IXYS
3,552 -

RFQ

IXTY08N50D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 800mA (Tc) - 4.6Ohm @ 400mA, 0V - 12.7 nC @ 5 V ±20V 312 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA06N120P-TRL

IXTA06N120P-TRL

MOSFET N-CH 1200V 600MA TO263

IXYS
2,794 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 600mA (Tc) 10V 34Ohm @ 300mA, 10V 4V @ 50µA 13.3 nC @ 10 V ±30V 236 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY1R6N50D2

IXTY1R6N50D2

MOSFET N-CH 500V 1.6A TO252

IXYS
3,952 -

RFQ

IXTY1R6N50D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tc) - 2.3Ohm @ 800mA, 0V - 23.7 nC @ 5 V ±20V 645 pF @ 25 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY1R6N100D2

IXTY1R6N100D2

MOSFET N-CH 1000V 1.6A TO252

IXYS
3,533 -

RFQ

IXTY1R6N100D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tc) - 10Ohm @ 800mA, 0V - 27 nC @ 5 V ±20V 645 pF @ 25 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA06N120P

IXTA06N120P

MOSFET N-CH 1200V 600MA TO263

IXYS
606 -

RFQ

IXTA06N120P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 600mA (Tc) 10V 32Ohm @ 300mA, 10V 4.5V @ 50µA 13.3 nC @ 10 V ±20V 270 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA4N100Q

IXFA4N100Q

MOSFET N-CH 1000V 4A TO263

IXYS
2,051 -

RFQ

IXFA4N100Q

Ficha técnica

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3Ohm @ 2A, 10V 4.5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA36P15P-TRL

IXTA36P15P-TRL

MOSFET P-CH 150V 36A TO263

IXYS
2,472 -

RFQ

Tape & Reel (TR),Cut Tape (CT) PolarP™ Active P-Channel MOSFET (Metal Oxide) 150 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA44P15T-TRL

IXTA44P15T-TRL

MOSFET P-CH 150V 44A TO263

IXYS
3,322 -

RFQ

IXTA44P15T-TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 65mOhm @ 22A, 10V 4V @ 250µA 175 nC @ 10 V ±15V 13400 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA96P085T-TRL

IXTA96P085T-TRL

MOSFET P-CH 85V 96A TO263

IXYS
754 -

RFQ

IXTA96P085T-TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 85 V 96A (Tc) 10V 13mOhm @ 48A, 10V 4V @ 250µA 180 nC @ 10 V ±15V 13100 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFY26N30X3

IXFY26N30X3

MOSFET N-CH 300V 26A TO252AA

IXYS
2,732 -

RFQ

IXFY26N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 26A (Tc) 10V 66mOhm @ 13A, 10V 4.5V @ 500µA 22 nC @ 10 V ±20V 1465 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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