Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN170N25X3

IXFN170N25X3

MOSFET N-CH 250V 170A SOT227B

IXYS
3,429 -

RFQ

IXFN170N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 170A (Tc) 10V 7.4mOhm @ 85A, 10V 4.5V @ 4mA 190 nC @ 10 V ±20V 13500 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTK110N20L2

IXTK110N20L2

MOSFET N-CH 200V 110A TO264

IXYS
3,247 -

RFQ

IXTK110N20L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 200 V 110A (Tc) 10V 24mOhm @ 55A, 10V 4.5V @ 3mA 500 nC @ 10 V ±20V 23000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK200N10L2

IXTK200N10L2

MOSFET N-CH 100V 200A TO264

IXYS
2,516 -

RFQ

IXTK200N10L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 11mOhm @ 100A, 10V 4.5V @ 3mA 540 nC @ 10 V ±20V 23000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN110N60P3

IXFN110N60P3

MOSFET N-CH 600V 90A SOT227B

IXYS
2,837 -

RFQ

IXFN110N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 90A (Tc) 10V 56mOhm @ 55A, 10V 5V @ 8mA 245 nC @ 10 V ±30V 18000 pF @ 25 V - 1500W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX400N15X4

IXTX400N15X4

MOSFET N-CH 150V 400A PLUS247

IXYS
2,638 -

RFQ

IXTX400N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 400A (Tc) 10V 3.1mOhm @ 100A, 10V 4.5V @ 1mA 430 nC @ 10 V ±20V 14500 pF @ 25 V - 1500W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFN66N85X

IXFN66N85X

MOSFET N-CH 850V 65A SOT227B

IXYS
237 -

RFQ

IXFN66N85X

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 65A (Tc) 10V 65mOhm @ 33A, 10V 5.5V @ 8mA 230 nC @ 10 V ±30V 8900 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN210N30X3

IXFN210N30X3

MOSFET N-CH 300V 210A SOT227B

IXYS
3,819 -

RFQ

IXFN210N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 210A (Tc) 10V 4.6mOhm @ 105A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 24200 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN360N15T2

IXFN360N15T2

MOSFET N-CH 150V 310A SOT227B

IXYS
3,482 -

RFQ

IXFN360N15T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 310A (Tc) 10V 4mOhm @ 60A, 10V 5V @ 8mA 715 nC @ 10 V ±20V 47500 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXTN60N50L2

IXTN60N50L2

MOSFET N-CH 500V 53A SOT227B

IXYS
3,371 -

RFQ

IXTN60N50L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 53A (Tc) 10V 100mOhm @ 30A, 10V 4.5V @ 250µA 610 nC @ 10 V ±30V 24000 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN90N25L2

IXTN90N25L2

MOSFET N-CH 250V 90A SOT227B

IXYS
2,409 -

RFQ

IXTN90N25L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 250 V 90A (Tc) 10V 33mOhm @ 500mA, 10V 4.5V @ 3mA 640 nC @ 10 V ±20V 23000 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN200N10L2

IXTN200N10L2

MOSFET N-CH 100V 178A SOT227B

IXYS
950 -

RFQ

IXTN200N10L2

Ficha técnica

Bulk Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 178A (Tc) 10V 11mOhm @ 100A, 10V 4.5V @ 3mA 540 nC @ 10 V ±20V 23000 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTN22N100L

IXTN22N100L

MOSFET N-CH 1000V 22A SOT227B

IXYS
3,932 -

RFQ

IXTN22N100L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1000 V 22A (Tc) 20V 600mOhm @ 11A, 20V 5.5V @ 250µA 270 nC @ 15 V ±30V 7050 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN82N60Q3

IXFN82N60Q3

MOSFET N-CH 600V 66A SOT227B

IXYS
2,435 -

RFQ

IXFN82N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 66A (Tc) 10V 75mOhm @ 41A, 10V 6.5V @ 8mA 275 nC @ 10 V ±30V 13500 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFH80N65X2

IXFH80N65X2

MOSFET N-CH 650V 80A TO247

IXYS
2,384 -

RFQ

IXFH80N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 40mOhm @ 40A, 10V 5.5V @ 4mA 143 nC @ 10 V ±30V 8245 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK170N20T

IXFK170N20T

MOSFET N-CH 200V 170A TO264AA

IXYS
3,981 -

RFQ

IXFK170N20T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 170A (Tc) 10V 11mOhm @ 60A, 10V 5V @ 4mA 265 nC @ 10 V ±20V 19600 pF @ 25 V - 1150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH24N50

IXTH24N50

MOSFET N-CH 500V 24A TO247

IXYS
3,345 -

RFQ

IXTH24N50

Ficha técnica

Tube MegaMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 230mOhm @ 12A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY1R6N50P

IXTY1R6N50P

MOSFET N-CH 500V 1.6A TO252

IXYS
2,296 -

RFQ

IXTY1R6N50P

Ficha técnica

Tube PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tc) 10V 6.5Ohm @ 500mA, 10V 5.5V @ 25µA 3.9 nC @ 10 V ±30V 140 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP1R6N50P

IXTP1R6N50P

MOSFET N-CH 500V 1.6A TO220AB

IXYS
2,872 -

RFQ

IXTP1R6N50P

Ficha técnica

Tube Polar Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tc) 10V 6.5Ohm @ 500mA, 10V 5.5V @ 25µA 3.9 nC @ 10 V ±30V 140 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY2R4N50P

IXTY2R4N50P

MOSFET N-CH 500V 2.4A TO252

IXYS
3,474 -

RFQ

IXTY2R4N50P

Ficha técnica

Tube PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3.75Ohm @ 500mA, 10V 5.5V @ 25µA 6.1 nC @ 10 V ±30V 240 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP2R4N50P

IXTP2R4N50P

MOSFET N-CH 500V 2.4A TO220AB

IXYS
2,752 -

RFQ

IXTP2R4N50P

Ficha técnica

Tube PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3.75Ohm @ 500mA, 10V 5.5V @ 25µA 6.1 nC @ 10 V ±30V 240 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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