Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH20P50P

IXTH20P50P

MOSFET P-CH 500V 20A TO247

IXYS
3,655 -

RFQ

IXTH20P50P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 450mOhm @ 10A, 10V 4V @ 250µA 103 nC @ 10 V ±20V 5120 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH240N15X4

IXTH240N15X4

MOSFET N-CH 150V 240A TO247

IXYS
3,881 -

RFQ

IXTH240N15X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 4.4mOhm @ 120A, 10V 4.5V @ 250µA 195 nC @ 10 V ±20V 8900 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH320N10T2

IXFH320N10T2

MOSFET N-CH 100V 320A TO247AD

IXYS
980 -

RFQ

IXFH320N10T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 320A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 250µA 430 nC @ 10 V ±20V 26000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH02N250

IXTH02N250

MOSFET N-CH 2500V 200MA TO247

IXYS
3,693 -

RFQ

IXTH02N250

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 200mA (Tc) 10V 450Ohm @ 50mA, 10V 4.5V @ 250µA 7.4 nC @ 10 V ±20V 116 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK80N60P3

IXFK80N60P3

MOSFET N-CH 600V 80A TO264AA

IXYS
2,273 -

RFQ

IXFK80N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 80A (Tc) 10V 70mOhm @ 500mA, 10V 5V @ 8mA 190 nC @ 10 V ±30V 13100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR140N20P

IXFR140N20P

MOSFET N-CH 200V 90A ISOPLUS247

IXYS
2,286 -

RFQ

IXFR140N20P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 22mOhm @ 45A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK180N25T

IXFK180N25T

MOSFET N-CH 250V 180A TO264AA

IXYS
3,268 -

RFQ

IXFK180N25T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 180A (Tc) 10V 12.9mOhm @ 60A, 10V 5V @ 8mA 345 nC @ 10 V ±20V 28000 pF @ 25 V - 1390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR140N30P

IXFR140N30P

MOSFET N-CH 300V 70A ISOPLUS247

IXYS
2,099 -

RFQ

IXFR140N30P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 70A (Tc) 10V 26mOhm @ 70A, 10V 5V @ 8mA 185 nC @ 10 V ±20V 14800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT170N25X3HV

IXFT170N25X3HV

MOSFET N-CH 250V 170A TO268HV

IXYS
3,612 -

RFQ

IXFT170N25X3HV

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 170A (Tc) 10V 7.4mOhm @ 85A, 10V 4.5V @ 4mA 190 nC @ 10 V ±20V 13500 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTX40P50P

IXTX40P50P

MOSFET P-CH 500V 40A PLUS247-3

IXYS
2,516 -

RFQ

IXTX40P50P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 230mOhm @ 20A, 10V 4V @ 1mA 205 nC @ 10 V ±20V 11500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK170P10P

IXTK170P10P

MOSFET P-CH 100V 170A TO264

IXYS
3,169 -

RFQ

IXTK170P10P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 12mOhm @ 500mA, 10V 4V @ 1mA 240 nC @ 10 V ±20V 12600 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN180N25T

IXFN180N25T

MOSFET N-CH 250V 168A SOT227B

IXYS
2,616 -

RFQ

IXFN180N25T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 168A (Tc) 10V 12.9mOhm @ 60A, 10V 5V @ 8mA 345 nC @ 10 V ±20V 28000 pF @ 25 V - 900W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFK230N20T

IXFK230N20T

MOSFET N-CH 200V 230A TO264AA

IXYS
2,017 -

RFQ

IXFK230N20T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 230A (Tc) 10V 7.5mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 1670W (Tc) - Through Hole
IXFK48N50

IXFK48N50

MOSFET N-CH 500V 48A TO264AA

IXYS
2,784 -

RFQ

IXFK48N50

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 100mOhm @ 24A, 10V 4V @ 8mA 270 nC @ 10 V ±20V 8400 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN360N10T

IXFN360N10T

MOSFET N-CH 100V 360A SOT-227B

IXYS
3,819 -

RFQ

IXFN360N10T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 360A (Tc) 10V 2.6mOhm @ 180A, 10V 4.5V @ 250µA 505 nC @ 10 V ±20V 36000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFN180N15P

IXFN180N15P

MOSFET N-CH 150V 150A SOT-227B

IXYS
2,743 -

RFQ

IXFN180N15P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 11mOhm @ 90A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7000 pF @ 25 V - 680W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFK24N100Q3

IXFK24N100Q3

MOSFET N-CH 1000V 24A TO264AA

IXYS
3,059 -

RFQ

IXFK24N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 440mOhm @ 12A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7200 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN64N50P

IXFN64N50P

MOSFET N-CH 500V 61A SOT227B

IXYS
2,521 -

RFQ

IXFN64N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 61A (Tc) 10V 85mOhm @ 32A, 10V 5.5V @ 8mA 150 nC @ 10 V ±30V 8700 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFX360N15T2

IXFX360N15T2

MOSFET N-CH 150V 360A PLUS247-3

IXYS
3,588 -

RFQ

IXFX360N15T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 360A (Tc) 10V 4mOhm @ 60A, 10V 5V @ 8mA 715 nC @ 10 V ±20V 47500 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFN520N075T2

IXFN520N075T2

MOSFET N-CH 75V 480A SOT227B

IXYS
3,747 -

RFQ

IXFN520N075T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 480A (Tc) 10V 1.9mOhm @ 100A, 10V 5V @ 8mA 545 nC @ 10 V ±20V 41000 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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