Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFX64N50Q3

IXFX64N50Q3

MOSFET N-CH 500V 64A PLUS247-3

IXYS
2,496 -

RFQ

IXFX64N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 64A (Tc) 10V 85mOhm @ 32A, 10V 6.5V @ 4mA 145 nC @ 10 V ±30V 6950 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX20N150

IXTX20N150

MOSFET N-CH 1500V 20A PLUS247-3

IXYS
3,352 -

RFQ

IXTX20N150

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 20A (Tc) 10V 1Ohm @ 10A, 10V 4.5V @ 1mA 215 nC @ 10 V ±30V 7800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN94N50P2

IXFN94N50P2

MOSFET N-CH 500V 68A SOT227B

IXYS
3,876 -

RFQ

IXFN94N50P2

Ficha técnica

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 68A (Tc) 10V 55mOhm @ 500mA, 10V 5V @ 8mA 220 nC @ 10 V ±30V 13700 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MKE38RK600DFEL-TRR

MKE38RK600DFEL-TRR

MOSFET N-CH 600V 50A SMPD

IXYS
3,757 -

RFQ

MKE38RK600DFEL-TRR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) Surface Mount
IXFX80N50Q3

IXFX80N50Q3

MOSFET N-CH 500V 80A PLUS247-3

IXYS
2,654 -

RFQ

IXFX80N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 80A (Tc) 10V 65mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK80N50Q3

IXFK80N50Q3

MOSFET N-CH 500V 80A TO264AA

IXYS
3,354 -

RFQ

IXFK80N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 80A (Tc) 10V 65mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR32N80Q3

IXFR32N80Q3

MOSFET N-CH 800V 24A ISOPLUS247

IXYS
2,127 -

RFQ

IXFR32N80Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 800 V 24A (Tc) 10V 300mOhm @ 16A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 6940 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL210N30P3

IXFL210N30P3

MOSFET N-CH 300V 108A ISOPLUS264

IXYS
2,855 -

RFQ

IXFL210N30P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 108A (Tc) 10V 16mOhm @ 105A, 10V 5V @ 8mA 268 nC @ 10 V ±20V 16200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB70N60Q2

IXFB70N60Q2

MOSFET N-CH 600V 70A PLUS264

IXYS
3,325 -

RFQ

IXFB70N60Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 88mOhm @ 35A, 10V 5.5V @ 8mA 265 nC @ 10 V ±30V 12000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH1N300P3HV

IXTH1N300P3HV

MOSFET N-CH 3000V 1A TO247HV

IXYS
3,272 -

RFQ

IXTH1N300P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 1A (Tc) 10V 50Ohm @ 500mA, 10V 4V @ 250µA 30.6 nC @ 10 V ±20V 895 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT4N150HV

IXTT4N150HV

MOSFET N-CH 1500V 4A TO268

IXYS
2,302 -

RFQ

IXTT4N150HV

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 4A (Tc) 10V 6Ohm @ 500mA, 10V 5V @ 250µA 44.5 nC @ 10 V ±30V 1576 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFR64N60Q3

IXFR64N60Q3

MOSFET N-CH 600V 42A ISOPLUS247

IXYS
3,693 -

RFQ

IXFR64N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 104mOhm @ 32A, 10V 6.5V @ 4mA 190 nC @ 10 V ±30V 9930 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN44N100P

IXFN44N100P

MOSFET N-CH 1000V 37A SOT-227B

IXYS
3,155 -

RFQ

IXFN44N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 220mOhm @ 22A, 10V 6.5V @ 1mA 305 nC @ 10 V ±30V 19000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFR32N100Q3

IXFR32N100Q3

MOSFET N-CH 1000V 23A ISOPLUS247

IXYS
2,598 -

RFQ

IXFR32N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 23A (Tc) 10V 350mOhm @ 16A, 10V 6.5V @ 8mA 195 nC @ 10 V ±30V 9940 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB40N110Q3

IXFB40N110Q3

MOSFET N-CH 1100V 40A PLUS264

IXYS
3,024 -

RFQ

IXFB40N110Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1100 V 40A (Tc) 10V 260mOhm @ 20A, 10V 6.5V @ 8mA 300 nC @ 10 V ±30V 14000 pF @ 25 V - 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMIX1F180N25T

MMIX1F180N25T

MOSFET N-CH 250V 132A 24SMPD

IXYS
3,326 -

RFQ

MMIX1F180N25T

Ficha técnica

Tube GigaMOS™, HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 250 V 132A (Tc) 10V 13mOhm @ 90A, 10V 5V @ 8mA 364 nC @ 10 V ±20V 23800 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT3N200P3HV

IXTT3N200P3HV

MOSFET N-CH 2000V 3A TO268

IXYS
2,802 -

RFQ

IXTT3N200P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 2000 V 3A (Tc) 10V 8Ohm @ 1.5A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 1860 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFN80N50Q3

IXFN80N50Q3

MOSFET N-CH 500V 63A SOT227B

IXYS
3,039 -

RFQ

IXFN80N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 63A (Tc) 10V 65mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MMIX1T132N50P3

MMIX1T132N50P3

MOSFET N-CH 500V 63A POLAR3

IXYS
2,417 -

RFQ

MMIX1T132N50P3

Ficha técnica

Tube Polar™ Active N-Channel MOSFET (Metal Oxide) 500 V 63A (Tc) 10V 43mOhm @ 66A, 10V 5V @ 8mA 267 nC @ 10 V ±30V 18600 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFN44N80Q3

IXFN44N80Q3

MOSFET N-CH 800V 37A SOT227B

IXYS
3,274 -

RFQ

IXFN44N80Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 800 V 37A (Tc) 10V 190mOhm @ 22A, 10V 6.5V @ 8mA 185 nC @ 10 V ±30V 9840 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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