Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA460P2

IXTA460P2

MOSFET N-CH 500V 24A TO263

IXYS
3,495 -

RFQ

IXTA460P2

Ficha técnica

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 270mOhm @ 12A, 10V 4.5V @ 250µA 48 nC @ 10 V ±30V 2890 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA24N65X2

IXTA24N65X2

MOSFET N-CH 650V 24A TO263AA

IXYS
3,864 -

RFQ

IXTA24N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 2060 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA110N15T2

IXFA110N15T2

MOSFET N-CH 150V 110A TO263

IXYS
3,398 -

RFQ

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 110A (Tc) 10V 13mOhm @ 55A, 10V 4.5V @ 250µA 150 nC @ 10 V ±20V 8600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFQ28N60P3

IXFQ28N60P3

MOSFET N-CH 600V 28A TO3P

IXYS
2,777 -

RFQ

IXFQ28N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 260mOhm @ 14A, 10V 5V @ 2.5mA 50 nC @ 10 V ±30V 3560 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH12N70X2

IXTH12N70X2

MOSFET N-CH 700V 12A TO247

IXYS
2,693 -

RFQ

IXTH12N70X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 700 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4.5V @ 250µA 19 nC @ 10 V ±30V 960 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ34N50P3

IXFQ34N50P3

MOSFET N-CH 500V 34A TO3P

IXYS
2,397 -

RFQ

IXFQ34N50P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 34A (Tc) 10V 170mOhm @ 17A, 10V 5V @ 4mA 60 nC @ 10 V ±30V 3260 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH80N25X3

IXFH80N25X3

MOSFET N-CH 250V 80A TO247

IXYS
3,176 -

RFQ

IXFH80N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 80A (Tc) 10V 16mOhm @ 40A, 10V 4.5V @ 1.5mA 83 nC @ 10 V ±20V 5430 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460

IRFP460

MOSFET N-CH 500V 20A TO247AD

IXYS
3,796 -

RFQ

IRFP460

Ficha técnica

Tube MegaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4200 pF @ 25 V - 260W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN36N60

IXFN36N60

MOSFET N-CH 600V 36A SOT-227B

IXYS
3,339 -

RFQ

IXFN36N60

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 180mOhm @ 500mA, 10V 4.5V @ 8mA 325 nC @ 10 V ±20V 9000 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTH20N60

IXTH20N60

MOSFET N-CH 600V 20A TO247

IXYS
3,307 -

RFQ

IXTH20N60

Ficha técnica

Tube MegaMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 350mOhm @ 10A, 10V 4.5V @ 250µA 170 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT440N055T2

IXTT440N055T2

MOSFET N-CH 55V 440A TO268

IXYS
3,682 -

RFQ

IXTT440N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 440A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 250µA 405 nC @ 10 V ±20V 25000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFK102N30P

IXFK102N30P

MOSFET N-CH 300V 102A TO264AA

IXYS
3,742 -

RFQ

IXFK102N30P

Ficha técnica

Bulk HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 102A (Tc) 10V 33mOhm @ 500mA, 10V 5V @ 4mA 224 nC @ 10 V ±20V 7500 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX120N30P3

IXFX120N30P3

MOSFET N-CH 300V 120A PLUS247-3

IXYS
2,305 -

RFQ

IXFX120N30P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 27mOhm @ 60A, 10V 5V @ 4mA 150 nC @ 10 V ±20V 8630 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT15N100Q3

IXFT15N100Q3

MOSFET N-CH 1000V 15A TO268

IXYS
3,972 -

RFQ

IXFT15N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 1.05Ohm @ 7.5A, 10V 6.5V @ 4mA 64 nC @ 10 V ±30V 3250 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT26N100XHV

IXFT26N100XHV

MOSFET N-CH 1000V 26A TO268HV

IXYS
2,354 -

RFQ

IXFT26N100XHV

Ficha técnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Ta) 10V 320mOhm @ 500mA, 10V 6V @ 4mA 113 nC @ 10 V ±30V 3290 pF @ 25 V - 860mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IXFR15N100Q3

IXFR15N100Q3

MOSFET N-CH 1000V 10A ISOPLUS247

IXYS
3,351 -

RFQ

IXFR15N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 10A (Tc) 10V 1.2Ohm @ 7.5A, 10V 6.5V @ 4mA 64 nC @ 10 V ±30V 3250 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT70N30Q3

IXFT70N30Q3

MOSFET N-CH 300V 70A TO268

IXYS
3,670 -

RFQ

IXFT70N30Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 300 V 70A (Tc) 10V 54mOhm @ 35A, 10V 6.5V @ 4mA 98 nC @ 10 V ±20V 4735 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX64N60Q3

IXFX64N60Q3

MOSFET N-CH 600V 64A PLUS247-3

IXYS
3,725 -

RFQ

IXFX64N60Q3

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 95mOhm @ 32A, 10V 6.5V @ 4mA 190 nC @ 10 V ±30V 9930 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT150N25X3HV

IXFT150N25X3HV

MOSFET N-CH 250V 150A TO268HV

IXYS
3,710 -

RFQ

IXFT150N25X3HV

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 150A (Tc) 10V 9mOhm @ 75A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10400 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX48N60Q3

IXFX48N60Q3

MOSFET N-CH 600V 48A PLUS247-3

IXYS
2,918 -

RFQ

IXFX48N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 140mOhm @ 24A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7020 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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