Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH44P15T

IXTH44P15T

MOSFET P-CH 150V 44A TO247

IXYS
3,128 -

RFQ

IXTH44P15T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 65mOhm @ 500mA, 10V 4V @ 250µA 175 nC @ 10 V ±15V 13400 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH60N20L2

IXTH60N20L2

MOSFET N-CH 200V 60A TO247

IXYS
3,261 -

RFQ

IXTH60N20L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4.5V @ 250µA 255 nC @ 10 V ±20V 10500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR44N80P

IXFR44N80P

MOSFET N-CH 800V 25A ISOPLUS247

IXYS
2,481 -

RFQ

IXFR44N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) 10V 200mOhm @ 22A, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK220N15P

IXFK220N15P

MOSFET N-CH 150V 220A TO264AA

IXYS
3,509 -

RFQ

IXFK220N15P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 220A (Tc) 10V 9mOhm @ 500mA, 10V 4.5V @ 8mA 162 nC @ 10 V ±20V 15400 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFL82N60P

IXFL82N60P

MOSFET N-CH 600V 55A ISOPLUS264

IXYS
3,326 -

RFQ

IXFL82N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 55A (Tc) 10V 78mOhm @ 41A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 23000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMIX1T600N04T2

MMIX1T600N04T2

MOSFET N-CH 40V 600A 24SMPD

IXYS
3,497 -

RFQ

MMIX1T600N04T2

Ficha técnica

Tube FRFET®, SupreMOS® Active N-Channel MOSFET (Metal Oxide) 40 V 600A (Tc) 10V 1.3mOhm @ 100A, 10V 3.5V @ 250µA 590 nC @ 10 V ±20V 40000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFN40N90P

IXFN40N90P

MOSFET N-CH 900V 33A SOT227B

IXYS
3,508 -

RFQ

IXFN40N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 33A (Tc) 10V 210mOhm @ 20A, 10V 6.5V @ 1mA 230 nC @ 10 V ±30V 14000 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTZ550N055T2

IXTZ550N055T2

MOSFET N-CH 55V 550A DE475

IXYS
2,485 -

RFQ

IXTZ550N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1mOhm @ 100A, 10V 4V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFB82N60Q3

IXFB82N60Q3

MOSFET N-CH 600V 82A PLUS264

IXYS
3,056 -

RFQ

IXFB82N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 82A (Tc) 10V 75mOhm @ 41A, 10V 6.5V @ 8mA 275 nC @ 10 V ±30V 13500 pF @ 25 V - 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMIX1F230N20T

MMIX1F230N20T

MOSFET N-CH 200V 168A 24SMPD

IXYS
2,004 -

RFQ

MMIX1F230N20T

Ficha técnica

Tube GigaMOS™, HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 200 V 168A (Tc) 10V 8.3mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MMIX1F420N10T

MMIX1F420N10T

MOSFET N-CH 100V 334A 24SMPD

IXYS
3,262 -

RFQ

MMIX1F420N10T

Ficha técnica

Tube GigaMOS™, HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 334A (Tc) 10V 2.6mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 4700 pF @ 10 V - 680W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MMIX1T550N055T2

MMIX1T550N055T2

MOSFET N-CH 55V 550A 24SMPD

IXYS
3,322 -

RFQ

MMIX1T550N055T2

Ficha técnica

Tube FRFET®, SupreMOS® Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1.3mOhm @ 100A, 10V 3.8V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFR24N100Q3

IXFR24N100Q3

MOSFET N-CH 1000V 18A ISOPLUS247

IXYS
2,124 -

RFQ

IXFR24N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 490mOhm @ 12A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7200 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB300N10P

IXFB300N10P

MOSFET N-CH 100V 300A PLUS264

IXYS
3,423 -

RFQ

IXFB300N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 10V 5.5mOhm @ 50A, 10V 5V @ 8mA 279 nC @ 10 V ±20V 23000 pF @ 25 V - 1500W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFB210N20P

IXFB210N20P

MOSFET N-CH 200V 210A PLUS264

IXYS
2,833 -

RFQ

IXFB210N20P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 210A (Tc) 10V 10.5mOhm @ 105A, 10V 4.5V @ 8mA 255 nC @ 10 V ±20V 18600 pF @ 25 V - 1500W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTF1N250

IXTF1N250

MOSFET N-CH 2500V 1A ISOPLUS I4

IXYS
3,952 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 1A (Tc) 10V 40Ohm @ 500mA, 10V 4V @ 250µA 41 nC @ 10 V ±20V 1660 pF @ 25 V - 110W -55°C ~ 150°C (TJ) Through Hole
IXTT2N300P3HV

IXTT2N300P3HV

MOSFET N-CH 3000V 2A TO268

IXYS
3,064 -

RFQ

IXTT2N300P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 2A (Tc) 10V 21Ohm @ 1A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 1890 pF @ 25 V - 520W (Tc) -55°C ~ 155°C (TJ) Surface Mount
IXTN17N120L

IXTN17N120L

MOSFET N-CH 1200V 15A SOT-227B

IXYS
2,321 -

RFQ

IXTN17N120L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1200 V 15A (Tc) 20V 900mOhm @ 8.5A, 20V 5V @ 250µA 155 nC @ 15 V ±30V 8300 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTL2N470

IXTL2N470

MOSFET N-CH 4700V 2A I5PAK

IXYS
3,308 -

RFQ

IXTL2N470

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 4700 V 2A (Tc) 10V 20Ohm @ 1A, 10V 6V @ 250µA 180 nC @ 10 V ±20V 6860 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH13N110

IXTH13N110

MOSFET N-CH 1100V 13A TO247

IXYS
2,399 -

RFQ

IXTH13N110

Ficha técnica

Tube MegaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 1100 V 13A (Tc) 10V 920mOhm @ 500mA, 10V 4.5V @ 250µA 195 nC @ 10 V ±20V 5650 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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