Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTV26N60PS

IXTV26N60PS

MOSFET N-CH 600V 26A PLUS-220SMD

IXYS
2,882 -

RFQ

IXTV26N60PS

Ficha técnica

Tube PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 270mOhm @ 500mA, 10V 5V @ 250µA 72 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ26N60P

IXTQ26N60P

MOSFET N-CH 600V 26A TO3P

IXYS
3,971 -

RFQ

IXTQ26N60P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 270mOhm @ 500mA, 10V 5V @ 250µA 72 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTV30N60P

IXTV30N60P

MOSFET N-CH 600V 30A PLUS220

IXYS
3,210 -

RFQ

IXTV30N60P

Ficha técnica

Tube PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 5V @ 250µA 82 nC @ 10 V ±30V 5050 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTV30N60PS

IXTV30N60PS

MOSFET N-CH 600V 30A PLUS-220SMD

IXYS
2,137 -

RFQ

IXTV30N60PS

Ficha técnica

Tube PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 5V @ 250µA 82 nC @ 10 V ±30V 5050 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT30N60P

IXTT30N60P

MOSFET N-CH 600V 30A TO268

IXYS
3,055 -

RFQ

IXTT30N60P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 5V @ 250µA 82 nC @ 10 V ±30V 5050 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFC16N50P

IXFC16N50P

MOSFET N-CH 500V 10A ISOPLUS220

IXYS
2,862 -

RFQ

IXFC16N50P

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 450mOhm @ 8A, 10V 5.5V @ 2.5mA 43 nC @ 10 V ±30V 2250 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV22N50P

IXFV22N50P

MOSFET N-CH 500V 22A PLUS220

IXYS
3,144 -

RFQ

IXFV22N50P

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 270mOhm @ 11A, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2630 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV22N50PS

IXFV22N50PS

MOSFET N-CH 500V 22A PLUS-220SMD

IXYS
3,137 -

RFQ

IXFV22N50PS

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 270mOhm @ 11A, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2630 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFV26N50P

IXFV26N50P

MOSFET N-CH 500V 26A PLUS220

IXYS
2,253 -

RFQ

IXFV26N50P

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5.5V @ 4mA 60 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV26N50PS

IXFV26N50PS

MOSFET N-CH 500V 26A PLUS-220SMD

IXYS
3,853 -

RFQ

IXFV26N50PS

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5.5V @ 4mA 60 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFC26N50P

IXFC26N50P

MOSFET N-CH 500V 15A ISOPLUS220

IXYS
2,506 -

RFQ

IXFC26N50P

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 260mOhm @ 13A, 10V 5.5V @ 4mA 65 nC @ 10 V ±30V 3600 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV30N50P

IXFV30N50P

MOSFET N-CH 500V 30A PLUS220

IXYS
2,971 -

RFQ

IXFV30N50P

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 5V @ 4mA 70 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV30N50PS

IXFV30N50PS

MOSFET N-CH 500V 30A PLUS-220SMD

IXYS
3,337 -

RFQ

IXFV30N50PS

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 5V @ 4mA 70 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFV36N50P

IXFV36N50P

MOSFET N-CH 500V 36A PLUS220

IXYS
3,772 -

RFQ

IXFV36N50P

Ficha técnica

Tube HiPerFET™, PolarP2™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 170mOhm @ 500mA, 10V 5V @ 4mA 93 nC @ 10 V ±30V 5500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV36N50PS

IXFV36N50PS

MOSFET N-CH 500V 36A PLUS-220SMD

IXYS
2,851 -

RFQ

IXFV36N50PS

Ficha técnica

Tube HiPerFET™, PolarP2™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 170mOhm @ 500mA, 10V 5V @ 4mA 93 nC @ 10 V ±30V 5500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFC36N50P

IXFC36N50P

MOSFET N-CH 500V 19A ISOPLUS220

IXYS
2,938 -

RFQ

IXFC36N50P

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 190mOhm @ 18A, 10V 5V @ 4mA 93 nC @ 10 V ±30V 5500 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFC14N60P

IXFC14N60P

MOSFET N-CH 600V 8A ISOPLUS220

IXYS
2,137 -

RFQ

IXFC14N60P

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 630mOhm @ 7A, 10V 5.5V @ 2.5mA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV18N60P

IXFV18N60P

MOSFET N-CH 600V 18A PLUS220

IXYS
3,872 -

RFQ

IXFV18N60P

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 400mOhm @ 500mA, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV18N60PS

IXFV18N60PS

MOSFET N-CH 600V 18A PLUS-220SMD

IXYS
2,947 -

RFQ

IXFV18N60PS

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 400mOhm @ 500mA, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFV22N60P

IXFV22N60P

MOSFET N-CH 600V 22A PLUS220

IXYS
3,118 -

RFQ

IXFV22N60P

Ficha técnica

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 350mOhm @ 11A, 10V 5.5V @ 4mA 58 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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