Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQB5N60CTM

FQB5N60CTM

4.5A, 600V, 2OHM, N CHANNEL , D2

Fairchild Semiconductor
1,618 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 3.13W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RFP2N20

RFP2N20

N-CHANNEL, MOSFET

Harris Corporation
1,552 -

RFQ

RFP2N20

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 10V 3.5Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD2N90TF

FQD2N90TF

MOSFET N-CH 900V 1.7A DPAK

Fairchild Semiconductor
1,054 -

RFQ

FQD2N90TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 7.2Ohm @ 850mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP15P10PH

SPP15P10PH

15A, 100V, 0.24OHM, P-CHANNEL

Infineon Technologies
944 -

RFQ

SPP15P10PH

Ficha técnica

Bulk Automotive, AEC-Q101, SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 10V 240mOhm @ 10.6A, 10V 2.1V @ 1.54mA 48 nC @ 10 V ±20V 1280 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ)
UPA2713GR-E1-A

UPA2713GR-E1-A

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

UPA2713GR-E1-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA1725G-E1-A

UPA1725G-E1-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0358DSP-WS#J0

RJK0358DSP-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,520 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SPA07N60C2

SPA07N60C2

N-CHANNEL POWER MOSFET

Infineon Technologies
1,403 -

RFQ

SPA07N60C2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ32H3045A

BUZ32H3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
1,249 -

RFQ

BUZ32H3045A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ31H3046

BUZ31H3046

N-CHANNEL POWER MOSFET

Infineon Technologies
700 -

RFQ

BUZ31H3046

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ76

BUZ76

N-CHANNEL POWER MOSFET

Harris Corporation
700 -

RFQ

BUZ76

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 1mA - ±20V 650 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP139N08N3GXKSA1

IPP139N08N3GXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
632 -

RFQ

IPP139N08N3GXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ317NYTR

2SJ317NYTR

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
4,000 -

RFQ

2SJ317NYTR

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
RFD14N06

RFD14N06

N-CHANNEL POWER MOSFET

Harris Corporation
3,664 -

RFQ

RFD14N06

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 14A, 10V 4V @ 250µA 40 nC @ 20 V ±20V 570 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76439P3

HUFA76439P3

MOSFET N-CH 60V 75A TO220-3

Fairchild Semiconductor
1,551 -

RFQ

HUFA76439P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V 3V @ 250µA 84 nC @ 10 V ±16V 2745 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75333S3

HUF75333S3

MOSFET N-CH 55V 66A I2PAK

Fairchild Semiconductor
1,488 -

RFQ

HUF75333S3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 10V 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF9N25CT

FQPF9N25CT

MOSFET N-CH 250V 8.8A TO220F

Fairchild Semiconductor
1,343 -

RFQ

FQPF9N25CT

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN8R5-100ESQ

PSMN8R5-100ESQ

POWER FIELD-EFFECT TRANSISTOR, 1

NXP USA Inc.
975 -

RFQ

PSMN8R5-100ESQ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
UPA1816GR-9JG-E1-A

UPA1816GR-9JG-E1-A

MOSFET P-CH 12V 9A 8TSSOP

Renesas Electronics America Inc
9,000 -

RFQ

UPA1816GR-9JG-E1-A

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9A (Ta) - 15mOhm @ 4.5A, 4.5V 1.5V @ 1mA 15 nC @ 4 V - 1570 pF @ 10 V - - - Surface Mount
FDM606P

FDM606P

MOSFET P-CH 20V 6.8A 8MLP

Fairchild Semiconductor
9,587 -

RFQ

FDM606P

Ficha técnica

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.8A (Tc) 1.8V, 4.5V 30mOhm @ 6.8A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 2200 pF @ 10 V - 1.92W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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