Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU1010ZPBF

IRFU1010ZPBF

MOSFET N-CH 55V 42A IPAK

International Rectifier
4,925 -

RFQ

IRFU1010ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75829D3

HUF75829D3

MOSFET N-CH 150V 18A IPAK

Fairchild Semiconductor
4,067 -

RFQ

HUF75829D3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 110mOhm @ 18A, 10V 4V @ 250µA 70 nC @ 20 V ±20V 1080 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFM9014TF

SFM9014TF

MOSFET P-CH 60V 1.8A SOT223-4

Fairchild Semiconductor
4,000 -

RFQ

SFM9014TF

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.8A (Ta) 10V 500mOhm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUFA76419D3ST

HUFA76419D3ST

N-CHANNEL LOGIC LEVEL ULTRAFET

Fairchild Semiconductor
2,408 -

RFQ

HUFA76419D3ST

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V 3V @ 250µA 27.5 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FSS273-TL-E

FSS273-TL-E

N-CHANNEL MOSFET

onsemi
2,000 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 45 V 8A (Ta) - 22mOhm @ 8A, 10V - 40 nC @ 10 V - 2225 pF @ 20 V - 2.4W (Ta) 150°C (TJ) Surface Mount
RJK0353DSP-WS#J0

RJK0353DSP-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,685 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK754R0-40C,127

BUK754R0-40C,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.
989 -

RFQ

BUK754R0-40C,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) - 4mOhm @ 25A, 10V 4V @ 1mA 97 nC @ 10 V ±20V 5708 pF @ 25 V - 203W (Ta) -55°C ~ 175°C (TJ) Through Hole
FDMS8570S

FDMS8570S

28A, 25V, 0.0028OHM, N-CHANNEL

Fairchild Semiconductor
9,851 -

RFQ

FDMS8570S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 60A (Tc) 4.5V, 10V 2.8mOhm @ 24A, 10V 2.2V @ 1mA 425 nC @ 10 V ±12V 2825 pF @ 13 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ)
FQD5N50CTM

FQD5N50CTM

MOSFET N-CH 500V 4A DPAK

Fairchild Semiconductor
9,227 -

RFQ

FQD5N50CTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 1.4Ohm @ 2A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK1584(0)-T1-AZ

2SK1584(0)-T1-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
9,000 -

RFQ

2SK1584(0)-T1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK03B9DPA-0T#J53

RJK03B9DPA-0T#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
9,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SJ609

2SJ609

P-CHANNEL SMALL SIGNAL MOSFET

onsemi
7,400 -

RFQ

2SJ609

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQD2N60TF

FQD2N60TF

MOSFET N-CH 600V 2A DPAK

Fairchild Semiconductor
7,387 -

RFQ

FQD2N60TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.7Ohm @ 1A, 10V 5V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQU6N25TU

FQU6N25TU

MOSFET N-CH 250V 4.4A IPAK

Fairchild Semiconductor
6,803 -

RFQ

FQU6N25TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1Ohm @ 2.2A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 300 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0397DPA-02#J53

RJK0397DPA-02#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc
6,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDS7098N3

FDS7098N3

MOSFET N-CH 30V 14A 8SO

Fairchild Semiconductor
5,328 -

RFQ

FDS7098N3

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 9mOhm @ 14A, 10V 3V @ 250µA 22 nC @ 5 V ±20V 1587 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDC699P

FDC699P

MOSFET P-CH 20V 7A SUPERSOT6

Fairchild Semiconductor
4,762 -

RFQ

FDC699P

Ficha técnica

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 2.5V, 4.5V 22mOhm @ 7A, 4.5V 1.5V @ 250µA 38 nC @ 5 V ±12V 2640 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RJK03E3DNS-WS#J5

RJK03E3DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
4,450 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF9512

IRF9512

P-CHANNEL POWER MOSFET

Harris Corporation
4,210 -

RFQ

IRF9512

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 2.5A (Tc) 10V 1.6Ohm @ 1.5A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ100S

BUZ100S

N-CHANNEL POWER MOSFET

Infineon Technologies
4,031 -

RFQ

BUZ100S

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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