Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP2N15

RFP2N15

N-CHANNEL, MOSFET

Harris Corporation
2,411 -

RFQ

RFP2N15

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 2A (Tc) 10V 1.75Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75329D3

HUF75329D3

MOSFET N-CH 55V 20A IPAK

Fairchild Semiconductor
1,792 -

RFQ

HUF75329D3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 26mOhm @ 20A, 10V 4V @ 250µA 65 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI6N50TU

FQI6N50TU

MOSFET N-CH 500V 5.5A I2PAK

Fairchild Semiconductor
1,650 -

RFQ

FQI6N50TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.3Ohm @ 2.8A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 790 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB3N60CTM

FQB3N60CTM

MOSFET N-CH 600V 3A D2PAK

Fairchild Semiconductor
1,376 -

RFQ

FQB3N60CTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3A (Tc) 10V 3.4Ohm @ 1.5A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 565 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP44N08

FQP44N08

MOSFET N-CH 80V 44A TO220-3

Fairchild Semiconductor
1,147 -

RFQ

FQP44N08

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 44A (Tc) 10V 34mOhm @ 22A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1430 pF @ 25 V - 127W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76639P3

HUFA76639P3

MOSFET N-CH 100V 51A TO220-3

Fairchild Semiconductor
973 -

RFQ

HUFA76639P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 51A (Tc) 4.5V, 10V 26mOhm @ 51A, 10V 3V @ 250µA 86 nC @ 10 V ±16V 2400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI15P12TU

FQI15P12TU

MOSFET P-CH 120V 15A I2PAK

Fairchild Semiconductor
901 -

RFQ

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 120 V 15A (Tc) 10V 200mOhm @ 7.5A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 3.75W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFP9530

SFP9530

MOSFET P-CH 100V 10.5A TO220-3

Fairchild Semiconductor
762 -

RFQ

SFP9530

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 10.5A (Tc) - 300mOhm @ 5.3A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1035 pF @ 25 V - 66W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP6N40D-BE3

SIHP6N40D-BE3

N-CHANNEL 400V

Vishay Siliconix
1,000 -

RFQ

SIHP6N40D-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK4077-ZK-E1-AY

2SK4077-ZK-E1-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
7,500 -

RFQ

2SK4077-ZK-E1-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2734GR-E1-AT

UPA2734GR-E1-AT

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RF1S25N06SM9A

RF1S25N06SM9A

N-CHANNEL POWER MOSFET

Harris Corporation
4,000 -

RFQ

RF1S25N06SM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2727UT1A-E1-AY

UPA2727UT1A-E1-AY

MOSFET N-CH 30V 16A 8DFN

Renesas Electronics America Inc
3,000 -

RFQ

UPA2727UT1A-E1-AY

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) - 9.6mOhm @ 8A, 10V 2.5V @ 1mA 11 nC @ 5 V - 1170 pF @ 15 V - - - Surface Mount
FDD6690S

FDD6690S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,500 -

RFQ

FDD6690S

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 10V 16mOhm @ 10A, 10V 3V @ 1mA 24 nC @ 10 V ±20V 2010 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF19N20T

FQPF19N20T

11.8A, 200V, 0.15OHM, N CHANNEL

Fairchild Semiconductor
2,000 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 11.8A (Tc) 10V 150mOhm @ 5.9A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCU5N60TU

FCU5N60TU

4.6A, 600V, 0.95OHM, N-CHANNEL

Fairchild Semiconductor
1,688 -

RFQ

FCU5N60TU

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 950mOhm @ 2.3A, 10V 5V @ 250µA 16 nC @ 10 V ±30V 600 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ)
RF1S23N06LESM9A

RF1S23N06LESM9A

N-CHANNEL POWER MOSFET

Harris Corporation
800 -

RFQ

RF1S23N06LESM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF123

IRF123

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
738 -

RFQ

IRF123

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
MTB60N05HDL

MTB60N05HDL

N-CHANNEL POWER MOSFET

onsemi
700 -

RFQ

MTB60N05HDL

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
MTB60N10E7L

MTB60N10E7L

N-CHANNEL POWER MOSFET

Motorola
500 -

RFQ

MTB60N10E7L

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 2829303132333435...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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