Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK03B9DPA-00#J5A

RJK03B9DPA-00#J5A

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics America Inc
3,000 -

RFQ

RJK03B9DPA-00#J5A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 10.6mOhm @ 15A, 10V - 7.4 nC @ 4.5 V - 1110 pF @ 10 V - 25W (Tc) 150°C (TJ) Surface Mount
RJK0395DPA-00#J5A

RJK0395DPA-00#J5A

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics America Inc
3,000 -

RFQ

RJK0395DPA-00#J5A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 7.7mOhm @ 15A, 10V - 11 nC @ 4.5 V - 1670 pF @ 10 V - 30W (Tc) 150°C (TJ) Surface Mount
RJK0395DPA-00#J53

RJK0395DPA-00#J53

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics America Inc
3,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 7.7mOhm @ 15A, 10V - 11 nC @ 4.5 V - 1670 pF @ 10 V - 30W (Tc) - Surface Mount
FQI2N90TU

FQI2N90TU

MOSFET N-CH 900V 2.2A I2PAK

Fairchild Semiconductor
2,930 -

RFQ

FQI2N90TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.2A (Tc) 10V 7.2Ohm @ 1.1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 3.13W (Ta), 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK03B7DPA-WS#J53

RJK03B7DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,890 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NDB4060

NDB4060

MOSFET N-CH 60V 15A D2PAK

Fairchild Semiconductor
2,827 -

RFQ

NDB4060

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 10V 100mOhm @ 7.5A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 450 pF @ 25 V - 50W (Tc) -65°C ~ 175°C (TJ) Surface Mount
ND2012L-TR1

ND2012L-TR1

SMALL SIGNAL N-CHANNEL MOSFET

Siliconix
2,765 -

RFQ

ND2012L-TR1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK0395DPA-WS#J53

RJK0395DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,690 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK03B8DPA-WS#J53

RJK03B8DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,475 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK03B9DPA-WS#J53

RJK03B9DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,465 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HUF76419D3STR4921

HUF76419D3STR4921

20A, 60V, 0.043OHM, N CHANNEL

Fairchild Semiconductor
2,175 -

RFQ

HUF76419D3STR4921

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V 3V @ 250µA 27.5 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ)
FQPF14N15

FQPF14N15

MOSFET N-CH 150V 9.8A TO220F

Fairchild Semiconductor
1,856 -

RFQ

FQPF14N15

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 9.8A (Tc) 10V 210mOhm @ 4.9A, 10V 4V @ 250µA 23 nC @ 10 V ±25V 715 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI17N08TU

FQI17N08TU

MOSFET N-CH 80V 16.5A I2PAK

Fairchild Semiconductor
1,354 -

RFQ

FQI17N08TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 10V 115mOhm @ 8.25A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 450 pF @ 25 V - 3.13W (Ta), 65W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R750E6

IPP60R750E6

N-CHANNEL POWER MOSFET

Infineon Technologies
1,021 -

RFQ

IPP60R750E6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQI17P10TU

FQI17P10TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,000 -

RFQ

FQI17P10TU

Ficha técnica

Bulk QFET™ Active P-Channel MOSFET (Metal Oxide) 100 V 16.5A (Tc) 10V 190mOhm @ 8.25A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.75W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSO203SPNT

BSO203SPNT

P-CHANNEL POWER MOSFET

Infineon Technologies
900 -

RFQ

BSO203SPNT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFU1018EPBF

IRFU1018EPBF

MOSFET N-CH 60V 56A IPAK

International Rectifier
763 -

RFQ

IRFU1018EPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) - 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQU1N60TU

FQU1N60TU

MOSFET N-CH 600V 1A IPAK

Fairchild Semiconductor
607 -

RFQ

FQU1N60TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 11.5Ohm @ 500mA, 10V 5V @ 250µA 6 nC @ 10 V ±30V 150 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB11N40TM

FQB11N40TM

MOSFET N-CH 400V 11.4A D2PAK

Fairchild Semiconductor
8,000 -

RFQ

FQB11N40TM

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11.4A (Tc) 10V 480mOhm @ 5.7A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1400 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR210ATM

IRLR210ATM

MOSFET N-CH 200V 2.7A DPAK

Fairchild Semiconductor
7,500 -

RFQ

IRLR210ATM

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.7A (Tc) 5V 1.5Ohm @ 1.35A, 5V 2V @ 250µA 9 nC @ 5 V ±20V 240 pF @ 25 V - 2.5W (Ta), 21W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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