Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UPA2726UT1A-E2-AY

UPA2726UT1A-E2-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF9510

IRF9510

MOSFET P-CH 100V 4A TO220AB

Harris Corporation
2,685 -

RFQ

IRF9510

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK0364DPA-00#J0

RJK0364DPA-00#J0

MOSFET N-CH 30V 35A 8WPAK

Renesas Electronics America Inc
1,890 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) - 7.8mOhm @ 17.5A, 10V - 10 nC @ 4.5 V - 1600 pF @ 10 V - 35W (Tc) 150°C (TJ) Surface Mount
IPP65R600C6

IPP65R600C6

N-CHANNEL POWER MOSFET

Infineon Technologies
1,791 -

RFQ

IPP65R600C6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD16N03LSM9A

RFD16N03LSM9A

N-CHANNEL POWER MOSFET

Harris Corporation
1,540 -

RFQ

RFD16N03LSM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUFA75637P3

HUFA75637P3

MOSFET N-CH 100V 44A TO220-3

Fairchild Semiconductor
1,472 -

RFQ

HUFA75637P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N03S4L-03

IPI80N03S4L-03

N-CHANNEL POWER MOSFET

Infineon Technologies
952 -

RFQ

IPI80N03S4L-03

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4620PBF

IRFSL4620PBF

MOSFET N-CH 200V 24A TO262

International Rectifier
800 -

RFQ

IRFSL4620PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 77.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S15N08L

RF1S15N08L

LOGIC LEVEL GATE (5V) DEVICE

Harris Corporation
800 -

RFQ

RF1S15N08L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 45A - - - - - - - - - Surface Mount
IRFR9110

IRFR9110

MOSFET P-CH 100V 3.1A DPAK

Harris Corporation
554 -

RFQ

IRFR9110

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) - 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF830BPBF-BE3

IRF830BPBF-BE3

MOSFET N-CH 500V 5.3A TO220AB

Vishay Siliconix
843 -

RFQ

IRF830BPBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) - 1.5Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 325 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD630TM

FQD630TM

MOSFET N-CH 200V 7A DPAK

Fairchild Semiconductor
9,850 -

RFQ

FQD630TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD068AN03L

FDD068AN03L

MOSFET N-CH 30V 17A/35A TO252AA

Fairchild Semiconductor
8,203 -

RFQ

FDD068AN03L

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4105

AUIRFR4105

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
5,362 -

RFQ

AUIRFR4105

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMB506P

FDMB506P

MOSFET P-CH 20V 6.8A 8MLP

Fairchild Semiconductor
5,268 -

RFQ

FDMB506P

Ficha técnica

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 1.8V, 4.5V 30mOhm @ 6.8A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 2960 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SJ317NYTR-E

2SJ317NYTR-E

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
4,000 -

RFQ

2SJ317NYTR-E

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
FQB9N25CTM

FQB9N25CTM

MOSFET N-CH 250V 8.8A D2PAK

Fairchild Semiconductor
3,222 -

RFQ

FQB9N25CTM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SJ317NYTL-E

2SJ317NYTL-E

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

2SJ317NYTL-E

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
2SJ598-AY

2SJ598-AY

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics America Inc
2,681 -

RFQ

2SJ598-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDU068AN03L

FDU068AN03L

MOSFET N-CH 30V 17A/35A IPAK

Fairchild Semiconductor
2,514 -

RFQ

FDU068AN03L

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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