Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF75637P3

HUF75637P3

MOSFET N-CH 100V 44A TO220-3

Fairchild Semiconductor
5,595 -

RFQ

HUF75637P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N327AD3ST

ISL9N327AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,000 -

RFQ

ISL9N327AD3ST

Ficha técnica

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 27mOhm @ 20A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 910 pF @ 15 V - 50W (Ta) -55°C ~ 175°C (TJ) Surface Mount
NDS9400

NDS9400

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,000 -

RFQ

NDS9400

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) - 2.5A - - - - - - - 2W - Surface Mount
NTB8N50

NTB8N50

N-CHANNEL POWER MOSFET

onsemi
4,250 -

RFQ

NTB8N50

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFC8407TR

AUIRFC8407TR

AUTOMOTIVE POWER MOSFET

Infineon Technologies
2,064 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SPD30N03S2L-07 G

SPD30N03S2L-07 G

N-CHANNEL POWER MOSFET

Infineon Technologies
1,757 -

RFQ

SPD30N03S2L-07 G

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RF1S45N02L

RF1S45N02L

45A, 20V, 0.022OHM, N-CHANNEL LO

Harris Corporation
999 -

RFQ

RF1S45N02L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1300 pF @ 15 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76009P3

HUF76009P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
7,513 -

RFQ

HUF76009P3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 5V, 10V 27mOhm @ 20A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 470 pF @ 20 V - 41W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU6296

FDU6296

MOSFET N-CH 30V 15A/50A IPAK

Fairchild Semiconductor
7,413 -

RFQ

FDU6296

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 50A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V 3V @ 250µA 31.5 nC @ 10 V ±20V 1440 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP4N05

RFP4N05

N-CHANNEL POWER MOSFET

Harris Corporation
6,728 -

RFQ

RFP4N05

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 4A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK03M8DNS-WS#J5

RJK03M8DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
4,880 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQD3N60TF

FQD3N60TF

MOSFET N-CH 600V 2.4A DPAK

Fairchild Semiconductor
3,256 -

RFQ

FQD3N60TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 450 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQU3N40TU

FQU3N40TU

MOSFET N-CH 400V 2A IPAK

Fairchild Semiconductor
2,877 -

RFQ

FQU3N40TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI5N30TU

FQI5N30TU

MOSFET N-CH 300V 5.4A I2PAK

Fairchild Semiconductor
2,849 -

RFQ

FQI5N30TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 5.4A (Tc) 10V 900mOhm @ 2.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 3.13W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP8N20

RFP8N20

N-CHANNEL POWER MOSFET

Harris Corporation
2,366 -

RFQ

RFP8N20

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 8A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 1mA - ±20V 750 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5N50

FQPF5N50

MOSFET N-CH 500V 3A TO220F

Fairchild Semiconductor
1,999 -

RFQ

FQPF5N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 1.8Ohm @ 1.5A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 610 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD16N15TM

FQD16N15TM

MOSFET N-CH 150V 11.8A DPAK

Fairchild Semiconductor
1,947 -

RFQ

FQD16N15TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 11.8A (Tc) 10V 160mOhm @ 5.9A, 10V 4V @ 250µA 30 nC @ 10 V ±25V 910 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RJK0352DSP-WS#J0

RJK0352DSP-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,850 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQP2NA90

FQP2NA90

MOSFET N-CH 900V 2.8A TO220-3

Fairchild Semiconductor
1,789 -

RFQ

FQP2NA90

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.8A (Tc) 10V 5.8Ohm @ 1.4A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 680 pF @ 25 V - 107W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP5N50

FDP5N50

MOSFET N-CH 500V 5A TO220-3

Fairchild Semiconductor
1,761 -

RFQ

FDP5N50

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 640 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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