Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP2N12

RFP2N12

N-CHANNEL, MOSFET

Harris Corporation
1,550 -

RFQ

RFP2N12

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 2A (Tc) 10V 1.75Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR422

IRFR422

N-CHANNEL POWER MOSFET

Harris Corporation
1,139 -

RFQ

IRFR422

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SP000629364

SP000629364

IPP60R950C6 - 600V N-CHANNEL

Infineon Technologies
1,000 -

RFQ

SP000629364

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLR3802PBF

IRLR3802PBF

MOSFET N-CH 12V 84A DPAK

International Rectifier
9,369 -

RFQ

IRLR3802PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) - 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPB03N60C3

SPB03N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies
8,154 -

RFQ

SPB03N60C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLU3802PBF

IRLU3802PBF

HEXFET POWER MOSFET

International Rectifier
6,579 -

RFQ

IRLU3802PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
DIT095N08

DIT095N08

MOSFET N-CH 80V 95A TO220AB

Diotec Semiconductor
1,000 -

RFQ

DIT095N08

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 95A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6800 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFR9024TF

SFR9024TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
5,750 -

RFQ

SFR9024TF

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 7.8A (Tc) 10V 280mOhm @ 3.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFW840BTM

IRFW840BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,800 -

RFQ

IRFW840BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1800 pF @ 25 V - 3.13W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF76121S3

HUF76121S3

N-CHANNEL POWER MOSFET

Harris Corporation
3,600 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0368DPA-WS#J0

RJK0368DPA-WS#J0

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc
2,085 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK9511-55A,127

BUK9511-55A,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.
2,002 -

RFQ

BUK9511-55A,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Ta) - 10mOhm @ 25A, 10V 2V @ 1mA - ±10V 4230 pF @ 25 V - 166W (Ta) -55°C ~ 175°C (TJ) Through Hole
RJK0362DSP-WS#J0

RJK0362DSP-WS#J0

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc
1,830 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SJ166-T1B-A

2SJ166-T1B-A

P-CHANNEL MOSFET

Renesas Electronics America Inc
1,500 -

RFQ

2SJ166-T1B-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF4N50

FQPF4N50

MOSFET N-CH 500V 2.3A TO220F

Fairchild Semiconductor
1,000 -

RFQ

FQPF4N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.3A (Tc) 10V 2.7Ohm @ 1.15A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2788VYWS-E

2SK2788VYWS-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
999 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SI9424DY

SI9424DY

MOSFET P-CH 20V 8A 8SOIC

Fairchild Semiconductor
744 -

RFQ

SI9424DY

Ficha técnica

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 2.5V, 4.5V 24mOhm @ 8A, 4.5V 1.5V @ 250µA 33 nC @ 5 V ±10V 2260 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPB136N08N3GATMA1

IPB136N08N3GATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
4,000 -

RFQ

IPB136N08N3GATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFH5255TRPBF

IRFH5255TRPBF

MOSFET N-CH 25V 15A/51A PQFN

International Rectifier
4,000 -

RFQ

IRFH5255TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 15A (Ta), 51A (Tc) - 6mOhm @ 15A, 10V 2.35V @ 25µA 14.5 nC @ 10 V ±20V 988 pF @ 13 V - 3.6W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF711

IRF711

N-CHANNEL POWER MOSFET

Harris Corporation
6,031 -

RFQ

IRF711

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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