Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS634B_FP001

IRFS634B_FP001

MOSFET N-CH 250V 8.1A TO220F

Fairchild Semiconductor
6,000 -

RFQ

IRFS634B_FP001

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 4.05A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1000 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD7N10LE

RFD7N10LE

N-CHANNEL POWER MOSFET

Harris Corporation
5,942 -

RFQ

RFD7N10LE

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 7A (Tc) 5V 300mOhm @ 7A, 5V 2V @ 250µA 150 nC @ 10 V +10V, -8V 360 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76121S3ST

HUF76121S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,000 -

RFQ

HUF76121S3ST

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 4.5V, 10V 21mOhm @ 47A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
HUF76413D3

HUF76413D3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,600 -

RFQ

HUF76413D3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 49mOhm @ 20A, 10V 3V @ 250µA 20 nC @ 10 V ±16V 645 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQU4N25TU

FQU4N25TU

MOSFET N-CH 250V 3A IPAK

Fairchild Semiconductor
3,247 -

RFQ

FQU4N25TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3A (Tc) 10V 1.75Ohm @ 1.5A, 10V 5V @ 250µA 5.6 nC @ 10 V ±30V 200 pF @ 25 V - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS640A

IRFS640A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,576 -

RFQ

IRFS640A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 9.8A (Tc) 10V 180mOhm @ 4.9A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1500 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
RLD03N06CLESM9A

RLD03N06CLESM9A

N-CHANNEL POWER MOSFET

Harris Corporation
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQPF3N60

FQPF3N60

MOSFET N-CH 600V 2A TO220F

Fairchild Semiconductor
2,360 -

RFQ

FQPF3N60

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 3.6Ohm @ 1A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 450 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1587-T1-AZ

2SK1587-T1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,000 -

RFQ

2SK1587-T1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF76139S3ST

HUF76139S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,950 -

RFQ

HUF76139S3ST

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 2700 pF @ 25 V - 165W (Tc) -40°C ~ 150°C (TJ) Surface Mount
RFP45N02L

RFP45N02L

N-CHANNEL POWER MOSFET

Harris Corporation
1,871 -

RFQ

RFP45N02L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1300 pF @ 15 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD16N02L

RFD16N02L

16A, 20V, 0.022 OHM, N-CHANNEL L

Harris Corporation
1,793 -

RFQ

RFD16N02L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 16A (Tc) 5V 22mOhm @ 16A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1300 pF @ 20 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB5N40TM

FQB5N40TM

MOSFET N-CH 400V 4.5A D2PAK

Fairchild Semiconductor
1,425 -

RFQ

FQB5N40TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1.6Ohm @ 2.25A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 3.13W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3711TRLPBF

IRFR3711TRLPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
1,417 -

RFQ

IRFR3711TRLPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI3N30TU

FQI3N30TU

MOSFET N-CH 300V 3.2A I2PAK

Fairchild Semiconductor
1,146 -

RFQ

FQI3N30TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 3.2A (Tc) 10V 2.2Ohm @ 1.6A, 10V 5V @ 250µA 7 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
NIF9N05CLT3G-SY

NIF9N05CLT3G-SY

2.6 A, 52 V, N-CHANNEL, LOGIC LE

Sanyo
8,000 -

RFQ

NIF9N05CLT3G-SY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
ATP203-TL-H

ATP203-TL-H

MOSFET N-CH 30V 75A ATPAK

Sanyo
6,000 -

RFQ

ATP203-TL-H

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) 4.5V, 10V 8.2mOhm @ 38A, 10V - 44 nC @ 10 V ±20V 2750 pF @ 10 V - 50W (Tc) 150°C (TJ) Surface Mount
RF1S15N06SM

RF1S15N06SM

N-CHANNEL POWER MOSFET

Harris Corporation
4,894 -

RFQ

RF1S15N06SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 15A - - - - - - - - - Surface Mount
HUF76409D3

HUF76409D3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,600 -

RFQ

HUF76409D3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V 3V @ 250µA 15 nC @ 10 V ±16V 485 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SJ557(0)T1B-AT

2SJ557(0)T1B-AT

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

2SJ557(0)T1B-AT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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