Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK4100LS

2SK4100LS

N-CHANNEL SILICON MOSFET

Sanyo
958 -

RFQ

2SK4100LS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FW705-TL-E

FW705-TL-E

P-CHANNEL SILICON MOSFET

Sanyo
927 -

RFQ

FW705-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDD8880_NL

FDD8880_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
777 -

RFQ

FDD8880_NL

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 58A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1260 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTE490

NTE490

MOSFET N-CHANNEL 60V 500MA AXIAL

NTE Electronics, Inc
712 -

RFQ

NTE490

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Tj) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 60 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Through Hole
2SK2628LS

2SK2628LS

N-CHANNEL SILICON MOSFET

onsemi
5,978 -

RFQ

2SK2628LS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFS530A

IRFS530A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,315 -

RFQ

IRFS530A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 10.7A (Tc) 10V 110mOhm @ 5.35A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 790 pF @ 25 V - 32W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9535-100A,127

BUK9535-100A,127

MOSFET N-CH 100V 41A TO220AB

NXP USA Inc.
4,000 -

RFQ

BUK9535-100A,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 41A (Tc) 4.5V, 10V 34mOhm @ 25A, 10V 2V @ 1mA - ±10V 3573 pF @ 25 V - 149W (Tc) -55°C ~ 175°C (TJ) Through Hole
RLP03N06CLE

RLP03N06CLE

N-CHANNEL POWER MOSFET

Harris Corporation
3,673 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK2111-D-T1-AZ

2SK2111-D-T1-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
9,000 -

RFQ

2SK2111-D-T1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP80CN10NGXKSA1

IPP80CN10NGXKSA1

PFET, 13A I(D), 100V, 0.08OHM, 1

Infineon Technologies
5,891 -

RFQ

IPP80CN10NGXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF3709ZPBF

IRF3709ZPBF

MOSFET N-CH 30V 87A TO220AB

International Rectifier
5,547 -

RFQ

IRF3709ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) - 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI6463DQ

SI6463DQ

P-CHANNEL MOSFET

Fairchild Semiconductor
4,850 -

RFQ

SI6463DQ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 8.8A (Ta) 2.5V, 4.5V 12.5mOhm @ 8.8A, 4.5V 1.5V @ 250µA 66 nC @ 4.5 V ±12V 5045 pF @ 10 V - 600mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSW2N60BTM

SSW2N60BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,632 -

RFQ

SSW2N60BTM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 3.13W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MTB55N06Z

MTB55N06Z

N-CHANNEL POWER MOSFET

onsemi
3,606 -

RFQ

MTB55N06Z

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
MTD5N25E1

MTD5N25E1

NFET DPAK 250V 1.0R

onsemi
3,450 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQU10N20LTU

FQU10N20LTU

MOSFET N-CH 200V 7.6A IPAK

Fairchild Semiconductor
3,190 -

RFQ

FQU10N20LTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7.6A (Tc) 5V, 10V 360mOhm @ 3.8A, 10V 2V @ 250µA 17 nC @ 5 V ±20V 830 pF @ 25 V - 2.5W (Ta), 51W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP17N08L

FQP17N08L

MOSFET N-CH 80V 16.5A TO220-3

Fairchild Semiconductor
2,957 -

RFQ

FQP17N08L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 5V, 10V 100mOhm @ 8.25A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2111-T1-AY

2SK2111-T1-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

2SK2111-T1-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF512

IRF512

N-CHANNEL POWER MOSFET

Harris Corporation
1,663 -

RFQ

IRF512

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 4.9A (Tc) 10V 740mOhm @ 3.4A, 10V 4V @ 250µA 7.7 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7628-55A/C1118

BUK7628-55A/C1118

N-CHANNEL POWER MOSFET

NXP USA Inc.
1,600 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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