Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9Z34NLPBF

IRF9Z34NLPBF

MOSFET P-CH 55V 19A TO262

Infineon Technologies
2,879 -

RFQ

IRF9Z34NLPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z34NSPBF

IRF9Z34NSPBF

MOSFET P-CH 55V 19A D2PAK

Infineon Technologies
3,821 -

RFQ

IRF9Z34NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRCZ24PBF

IRCZ24PBF

MOSFET N-CH 55V 17A TO220-5

Vishay Siliconix
2,466 -

RFQ

IRCZ24PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 720 pF @ 25 V Current Sensing 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI540NPBF

IRLI540NPBF

MOSFET N-CH 100V 23A TO220AB FP

Infineon Technologies
2,869 -

RFQ

IRLI540NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 4V, 10V 44mOhm @ 12A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB9N30APBF

IRFB9N30APBF

MOSFET N-CH 300V 9.3A TO220AB

Vishay Siliconix
2,944 -

RFQ

IRFB9N30APBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 300 V 9.3A (Tc) 10V 450mOhm @ 5.6A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 920 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48VSPBF

IRFZ48VSPBF

MOSFET N-CH 60V 72A D2PAK

Infineon Technologies
2,114 -

RFQ

IRFZ48VSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) - 12mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V - 1985 pF @ 25 V - - - Surface Mount
PSMN017-60YS,115

PSMN017-60YS,115

MOSFET N-CH 60V 44A LFPAK56

Nexperia USA Inc.
2,865 -

RFQ

PSMN017-60YS,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 44A (Tc) 10V 15.7mOhm @ 15A, 10V 4V @ 1mA 20 nC @ 10 V ±20V 1172 pF @ 30 V - 74W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMA8051L

FDMA8051L

MOSFET N-CH 40V 10A 6MICROFET

onsemi
2,832 -

RFQ

FDMA8051L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 1260 pF @ 20 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RQ6L020SPTCR

RQ6L020SPTCR

MOSFET P-CH 60V 2A TSMT6

Rohm Semiconductor
3,565 -

RFQ

RQ6L020SPTCR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 4V, 10V 210mOhm @ 2A, 10V 3V @ 1mA 7.2 nC @ 5 V ±20V 750 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
BSZ099N06LS5ATMA1

BSZ099N06LS5ATMA1

MOSFET N-CH 60V 46A TSDSON

Infineon Technologies
3,328 -

RFQ

BSZ099N06LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 46A (Tc) 4.5V, 10V 9.9mOhm @ 20A, 10V 2.3V @ 14µA 3.1 nC @ 4.5 V ±20V 1300 pF @ 30 V Standard 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC80N04S6N036ATMA1

IAUC80N04S6N036ATMA1

IAUC80N04S6N036ATMA1

Infineon Technologies
3,947 -

RFQ

IAUC80N04S6N036ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 7V, 10V 3.68mOhm @ 40A, 10V 3V @ 18µA 22 nC @ 10 V ±20V 1338 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AON7262E

AON7262E

MOSFET N-CH 60V 21A/34A 8DFN

Alpha & Omega Semiconductor Inc.
3,749 -

RFQ

AON7262E

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Ta), 34A (Tc) 4.5V, 10V 6.2mOhm @ 20A, 10V 2.2V @ 250µA 45 nC @ 10 V ±20V 1650 pF @ 30 V - 5W (Ta), 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTD20P06LT4G

NTD20P06LT4G

MOSFET P-CH 60V 15.5A DPAK

onsemi
2,906 -

RFQ

NTD20P06LT4G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 15.5A (Ta) 5V 150mOhm @ 7.5A, 5V 2V @ 250µA 26 nC @ 5 V ±20V 1190 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMP4010SK3Q-13

DMP4010SK3Q-13

MOSFET P-CH 40V 15A/50A TO252

Diodes Incorporated
3,282 -

RFQ

DMP4010SK3Q-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 50A (Tc) 4.5V, 10V 9.9mOhm @ 9.8A, 10V 2.5V @ 250µA 91 nC @ 10 V ±25V 4234 pF @ 20 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFL9014TRPBF

IRFL9014TRPBF

MOSFET P-CH 60V 1.8A SOT223

Vishay Siliconix
2,611 -

RFQ

IRFL9014TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 1.8A (Tc) 10V 500mOhm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4436DY-T1-E3

SI4436DY-T1-E3

MOSFET N-CH 60V 8A 8SO

Vishay Siliconix
3,691 -

RFQ

SI4436DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 36mOhm @ 4.6A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1100 pF @ 30 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

MOSFET N-CH 200V 2.6A PPAK SC70

Vishay Siliconix
2,610 -

RFQ

SIA456DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 1.8V, 4.5V 1.38Ohm @ 750mA, 4.5V 1.4V @ 250µA 14.5 nC @ 10 V ±16V 350 pF @ 100 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4463CDY-T1-GE3

SI4463CDY-T1-GE3

MOSFET P-CH 20V 13.6A/49A 8SO

Vishay Siliconix
3,979 -

RFQ

SI4463CDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 13.6A (Ta), 49A (Tc) 2.5V, 10V 8mOhm @ 13A, 10V 1.4V @ 250µA 162 nC @ 10 V ±12V 4250 pF @ 15 V - 2.7W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS176LDN-T1-GE3

SIS176LDN-T1-GE3

N-CHANNEL 70 V (D-S) MOSFET POWE

Vishay Siliconix
2,062 -

RFQ

SIS176LDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 70 V 12.9A (Ta), 42.3A (Tc) 3.3V, 4.5V 10.9mOhm @ 10A, 4.5V 1.6V @ 250µA 19 nC @ 4.5 V ±12V 1660 pF @ 35 V - 3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMT6009LSS-13

DMT6009LSS-13

MOSFET N-CH 60V 10.8A 8SO T&R 2

Diodes Incorporated
2,375 -

RFQ

DMT6009LSS-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 10.8A (Ta) 4.5V, 10V 9.5mOhm @ 13.5A, 10V 2V @ 250µA 33.5 nC @ 10 V ±20V 1925 pF @ 30 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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