Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC050N03LSGATMA1

BSC050N03LSGATMA1

MOSFET N-CH 30V 18A/80A TDSON

Infineon Technologies
3,687 -

RFQ

BSC050N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 80A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2.2V @ 250µA 35 nC @ 10 V ±20V 2800 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD120AN15A0

FDD120AN15A0

MOSFET N-CH 150V 2.8A/14A DPAK

onsemi
3,310 -

RFQ

FDD120AN15A0

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 2.8A (Ta), 14A (Tc) 6V, 10V 120mOhm @ 4A, 10V 4V @ 250µA 14.5 nC @ 10 V ±20V 770 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVF3055L108T1G

NVF3055L108T1G

MOSFET N-CH 60V 3A SOT223

onsemi
3,490 -

RFQ

NVF3055L108T1G

Ficha técnica

Cut Tape (CT),Bulk Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 5V 120mOhm @ 1.5A, 5V 2V @ 250µA 15 nC @ 5 V ±15V 440 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Surface Mount
AOD4126

AOD4126

MOSFET N-CH 100V 7.5A/43A TO252

Alpha & Omega Semiconductor Inc.
2,475 -

RFQ

AOD4126

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SDMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 7.5A (Ta), 43A (Tc) 7V, 10V 24mOhm @ 20A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 2200 pF @ 50 V - 3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD23N06-31-GE3

SUD23N06-31-GE3

MOSFET N-CH 60V 21.4A TO252

Vishay Siliconix
3,521 -

RFQ

SUD23N06-31-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 21.4A (Tc) 4.5V, 10V 31mOhm @ 15A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 670 pF @ 25 V - 5.7W (Ta), 31.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS488DN-T1-GE3

SIS488DN-T1-GE3

MOSFET N-CH 40V 40A PPAK1212-8

Vishay Siliconix
3,136 -

RFQ

SIS488DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.2V @ 250µA 32 nC @ 10 V ±20V 1330 pF @ 20 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR9343TRPBF

IRLR9343TRPBF

MOSFET P-CH 55V 20A DPAK

Infineon Technologies
149 -

RFQ

IRLR9343TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
BSP171PH6327XTSA1

BSP171PH6327XTSA1

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies
3,117 -

RFQ

BSP171PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 4.5V, 10V 300mOhm @ 1.9A, 10V 2V @ 460µA 20 nC @ 10 V ±20V 460 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD8896

FDD8896

MOSFET N-CH 30V 17A/94A TO252AA

onsemi
2,175 -

RFQ

FDD8896

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 94A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP316PH6327XTSA1

BSP316PH6327XTSA1

MOSFET P-CH 100V 680MA SOT223-4

Infineon Technologies
3,523 -

RFQ

BSP316PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 680mA (Ta) 4.5V, 10V 1.8Ohm @ 680mA, 10V 2V @ 170µA 6.4 nC @ 10 V ±20V 146 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZXMP3A16GTA

ZXMP3A16GTA

MOSFET P-CH 30V 5.4A SOT223

Diodes Incorporated
3,093 -

RFQ

ZXMP3A16GTA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 5.4A (Ta) 4.5V, 10V 45mOhm @ 4.2A, 10V 1V @ 250µA 29.6 nC @ 10 V ±20V 1022 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZVN4206GVTA

ZVN4206GVTA

MOSFET N-CH 60V 1A SOT223

Diodes Incorporated
2,895 -

RFQ

ZVN4206GVTA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 1A (Ta) 5V, 10V 1Ohm @ 1.5A, 10V 3V @ 1mA - ±20V 100 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4431BDY-T1-E3

SI4431BDY-T1-E3

MOSFET P-CH 30V 5.7A 8SO

Vishay Siliconix
3,196 -

RFQ

SI4431BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.7A (Ta) 4.5V, 10V 30mOhm @ 7.5A, 10V 3V @ 250µA 20 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC050N04LSGATMA1

BSC050N04LSGATMA1

MOSFET N-CH 40V 18A/85A TDSON

Infineon Technologies
3,297 -

RFQ

BSC050N04LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 85A (Tc) 4.5V, 10V 5mOhm @ 50A, 10V 2V @ 27µA 47 nC @ 10 V ±20V 3700 pF @ 20 V - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ48VPBF

IRFZ48VPBF

MOSFET N-CH 60V 72A TO220AB

Infineon Technologies
3,740 -

RFQ

IRFZ48VPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1985 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF540NSPBF

IRF540NSPBF

MOSFET N-CH 100V 33A D2PAK

Infineon Technologies
2,358 -

RFQ

IRF540NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 44mOhm @ 16A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 1960 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL540NSPBF

IRL540NSPBF

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies
2,570 -

RFQ

IRL540NSPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010EZSPBF

IRF1010EZSPBF

MOSFET N-CH 60V 75A D2PAK

Infineon Technologies
3,775 -

RFQ

IRF1010EZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2203NPBF

IRL2203NPBF

MOSFET N-CH 30V 116A TO220AB

Infineon Technologies
3,167 -

RFQ

IRL2203NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 1V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL540NLPBF

IRL540NLPBF

MOSFET N-CH 100V 36A TO262

Infineon Technologies
2,507 -

RFQ

IRL540NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+
1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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