Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL8113SPBF

IRL8113SPBF

MOSFET N-CH 30V 105A D2PAK

Infineon Technologies
3,722 -

RFQ

IRL8113SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3709SPBF

IRF3709SPBF

MOSFET N-CH 30V 90A D2PAK

Infineon Technologies
3,039 -

RFQ

IRF3709SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3709LPBF

IRF3709LPBF

MOSFET N-CH 30V 90A TO262

Infineon Technologies
2,030 -

RFQ

IRF3709LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709ZLPBF

IRF3709ZLPBF

MOSFET N-CH 30V 87A TO262

Infineon Technologies
3,035 -

RFQ

IRF3709ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3706PBF

IRF3706PBF

MOSFET N-CH 20V 77A TO220AB

Infineon Technologies
3,083 -

RFQ

IRF3706PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3708PBF

IRF3708PBF

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies
2,310 -

RFQ

IRF3708PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3709ZSPBF

IRF3709ZSPBF

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies
2,300 -

RFQ

IRF3709ZSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707PBF

IRF3707PBF

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies
2,572 -

RFQ

IRF3707PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34NSPBF

IRFZ34NSPBF

MOSFET N-CH 55V 29A D2PAK

Infineon Technologies
3,960 -

RFQ

IRFZ34NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI624GPBF

IRFI624GPBF

MOSFET N-CH 250V 3.4A TO220-3

Vishay Siliconix
2,084 -

RFQ

IRFI624GPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.4A (Tc) 10V 1.1Ohm @ 2A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48ZSPBF

IRFZ48ZSPBF

MOSFET N-CH 55V 61A D2PAK

Infineon Technologies
2,538 -

RFQ

IRFZ48ZSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLI620GPBF

IRLI620GPBF

MOSFET N-CH 200V 4A TO220-3

Vishay Siliconix
2,439 -

RFQ

IRLI620GPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4A (Tc) 4V, 5V 800mOhm @ 2.4A, 5V 2V @ 250µA 16 nC @ 10 V ±10V 360 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3707LPBF

IRF3707LPBF

MOSFET N-CH 30V 62A TO262

Infineon Technologies
2,580 -

RFQ

IRF3707LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3706LPBF

IRF3706LPBF

MOSFET N-CH 20V 77A TO262

Infineon Technologies
3,583 -

RFQ

IRF3706LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3706SPBF

IRF3706SPBF

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
2,176 -

RFQ

IRF3706SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3704SPBF

IRF3704SPBF

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
2,132 -

RFQ

IRF3704SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707SPBF

IRF3707SPBF

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
2,131 -

RFQ

IRF3707SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3708SPBF

IRF3708SPBF

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
2,257 -

RFQ

IRF3708SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL530NSPBF

IRL530NSPBF

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
2,894 -

RFQ

IRL530NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ24NLPBF

IRLZ24NLPBF

MOSFET N-CH 55V 18A TO262

Infineon Technologies
3,699 -

RFQ

IRLZ24NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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