Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3709ZCLPBF

IRF3709ZCLPBF

MOSFET N-CH 30V 87A TO262

Infineon Technologies
2,388 -

RFQ

IRF3709ZCLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL520NSPBF

IRL520NSPBF

MOSFET N-CH 100V 10A D2PAK

Infineon Technologies
3,010 -

RFQ

IRL520NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3302SPBF

IRL3302SPBF

MOSFET N-CH 20V 39A D2PAK

Infineon Technologies
3,889 -

RFQ

IRL3302SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 39A (Tc) 4.5V, 7V 20mOhm @ 23A, 7V 700mV @ 250µA (Min) 31 nC @ 4.5 V ±10V 1300 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ46ZPBF

IRFZ46ZPBF

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
2,411 -

RFQ

IRFZ46ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707ZSPBF

IRF3707ZSPBF

MOSFET N-CH 30V 59A D2PAK

Infineon Technologies
2,391 -

RFQ

IRF3707ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 25µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ44ZLPBF

IRLZ44ZLPBF

MOSFET N-CH 55V 51A TO262

Infineon Technologies
2,722 -

RFQ

IRLZ44ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUXCLFZ24NSTRL

AUXCLFZ24NSTRL

MOSFET N-CH 55V 17A D2PAK

Infineon Technologies
2,436 -

RFQ

AUXCLFZ24NSTRL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 70mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF530NSPBF

IRF530NSPBF

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
2,014 -

RFQ

IRF530NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 3.8W (Ta), 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLI520NPBF

IRLI520NPBF

MOSFET N-CH 100V 8.1A TO220AB FP

Infineon Technologies
2,763 -

RFQ

IRLI520NPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.1A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711PBF

IRF3711PBF

MOSFET N-CH 20V 110A TO220AB

Infineon Technologies
3,773 -

RFQ

IRF3711PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ44ZSPBF

IRLZ44ZSPBF

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
2,574 -

RFQ

IRLZ44ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3202PBF

IRL3202PBF

MOSFET N-CH 20V 48A TO220AB

Infineon Technologies
3,554 -

RFQ

IRL3202PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 48A (Tc) 4.5V, 7V 16mOhm @ 29A, 7V 700mV @ 250µA (Min) 43 nC @ 4.5 V ±10V 2000 pF @ 15 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3711SPBF

IRF3711SPBF

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
2,046 -

RFQ

IRF3711SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3302PBF

IRL3302PBF

MOSFET N-CH 20V 39A TO220AB

Infineon Technologies
3,568 -

RFQ

IRL3302PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 39A (Tc) 4.5V, 7V 20mOhm @ 23A, 7V 700mV @ 250µA (Min) 31 nC @ 4.5 V ±10V 1300 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ34NLPBF

IRFZ34NLPBF

MOSFET N-CH 55V 29A TO262

Infineon Technologies
3,704 -

RFQ

IRFZ34NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44ZSPBF

IRFZ44ZSPBF

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
3,816 -

RFQ

IRFZ44ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL8113PBF

IRL8113PBF

MOSFET N-CH 30V 105A TO220AB

Infineon Technologies
3,969 -

RFQ

IRL8113PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46ZSPBF

IRFZ46ZSPBF

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
2,397 -

RFQ

IRFZ46ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLIZ24NPBF

IRLIZ24NPBF

MOSFET N-CH 55V 14A TO220AB FP

Infineon Technologies
2,076 -

RFQ

IRLIZ24NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 14A (Tc) 4V, 10V 60mOhm @ 8.4A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 26W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z24NLPBF

IRF9Z24NLPBF

MOSFET P-CH 55V 12A TO262

Infineon Technologies
3,190 -

RFQ

IRF9Z24NLPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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