Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ46NSPBF

IRFZ46NSPBF

MOSFET N-CH 55V 53A D2PAK

Infineon Technologies
3,036 -

RFQ

IRFZ46NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 16.5mOhm @ 28A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1696 pF @ 25 V - 3.8W (Ta), 107W (Tc) - Surface Mount
IRC530PBF

IRC530PBF

MOSFET N-CH 100V 14A TO220-5

Vishay Siliconix
3,657 -

RFQ

IRC530PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 700 pF @ 25 V Current Sensing 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF640NSPBF

IRF640NSPBF

MOSFET N-CH 200V 18A D2PAK

Infineon Technologies
3,178 -

RFQ

IRF640NSPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRCZ34PBF

IRCZ34PBF

MOSFET N-CH 60V 30A TO220-5

Vishay Siliconix
2,921 -

RFQ

IRCZ34PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1300 pF @ 25 V Current Sensing 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807ZLPBF

IRF2807ZLPBF

MOSFET N-CH 75V 75A TO262

Infineon Technologies
3,068 -

RFQ

IRF2807ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3303SPBF

IRL3303SPBF

MOSFET N-CH 30V 38A D2PAK

Infineon Technologies
2,576 -

RFQ

IRL3303SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3305PBF

IRF3305PBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,680 -

RFQ

IRF3305PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3650 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS17N20DPBF

IRFS17N20DPBF

MOSFET N-CH 200V 16A D2PAK

Infineon Technologies
2,668 -

RFQ

IRFS17N20DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4215PBF

IRFB4215PBF

MOSFET N-CH 60V 115A TO220AB

Infineon Technologies
2,303 -

RFQ

IRFB4215PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115A (Tc) 10V 9mOhm @ 54A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4080 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707ZLPBF

IRF3707ZLPBF

MOSFET N-CH 30V 59A TO262

Infineon Technologies
3,508 -

RFQ

IRF3707ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 25µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711ZCLPBF

IRF3711ZCLPBF

MOSFET N-CH 20V 92A TO262

Infineon Technologies
2,632 -

RFQ

IRF3711ZCLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL8113LPBF

IRL8113LPBF

MOSFET N-CH 30V 105A TO262

Infineon Technologies
2,638 -

RFQ

IRL8113LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46ZLPBF

IRFZ46ZLPBF

MOSFET N-CH 55V 51A TO262

Infineon Technologies
3,293 -

RFQ

IRFZ46ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3315SPBF

IRF3315SPBF

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies
2,550 -

RFQ

IRF3315SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3315LPBF

IRF3315LPBF

MOSFET N-CH 150V 21A TO262

Infineon Technologies
2,870 -

RFQ

IRF3315LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB33N15DPBF

IRFB33N15DPBF

MOSFET N-CH 150V 33A TO220AB

Infineon Technologies
2,701 -

RFQ

IRFB33N15DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS33N15DPBF

IRFS33N15DPBF

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies
2,893 -

RFQ

IRFS33N15DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1104LPBF

IRF1104LPBF

MOSFET N-CH 40V 100A TO-262

Infineon Technologies
2,365 -

RFQ

IRF1104LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) - 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V - 2900 pF @ 25 V - - - Through Hole
IRL1104SPBF

IRL1104SPBF

MOSFET N-CH 40V 104A D2PAK

Infineon Technologies
3,147 -

RFQ

IRL1104SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 2.4W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1104PBF

IRL1104PBF

MOSFET N-CH 40V 104A TO220AB

Infineon Technologies
2,637 -

RFQ

IRL1104PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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