Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLZ24NSPBF

IRLZ24NSPBF

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies
3,813 -

RFQ

IRLZ24NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF737LCPBF

IRF737LCPBF

MOSFET N-CH 300V 6.1A TO220AB

Vishay Siliconix
3,966 -

RFQ

IRF737LCPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 300 V 6.1A (Tc) 10V 750mOhm @ 3.7A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 430 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF540ZSPBF

IRF540ZSPBF

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies
2,391 -

RFQ

IRF540ZSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6215PBF

IRF6215PBF

MOSFET P-CH 150V 13A TO220AB

Infineon Technologies
2,060 -

RFQ

IRF6215PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ34NSPBF

IRLZ34NSPBF

MOSFET N-CH 55V 30A D2PAK

Infineon Technologies
3,125 -

RFQ

IRLZ34NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4V, 10V 35mOhm @ 16A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ34NLPBF

IRLZ34NLPBF

MOSFET N-CH 55V 30A TO262

Infineon Technologies
3,445 -

RFQ

IRLZ34NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4V, 10V 35mOhm @ 16A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF644NPBF

IRF644NPBF

MOSFET N-CH 250V 14A TO220AB

Vishay Siliconix
3,851 -

RFQ

IRF644NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3103PBF

IRL3103PBF

MOSFET N-CH 30V 64A TO220AB

Infineon Technologies
2,918 -

RFQ

IRL3103PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3102PBF

IRL3102PBF

MOSFET N-CH 20V 61A TO220AB

Infineon Technologies
3,040 -

RFQ

IRL3102PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 61A (Tc) 4.5V, 7V 13mOhm @ 37A, 7V 700mV @ 250µA (Min) 58 nC @ 4.5 V ±10V 2500 pF @ 15 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48NSPBF

IRFZ48NSPBF

MOSFET N-CH 55V 64A D2PAK

Infineon Technologies
2,444 -

RFQ

IRFZ48NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 14mOhm @ 32A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 1970 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL5602SPBF

IRL5602SPBF

MOSFET P-CH 20V 24A D2PAK

Infineon Technologies
3,102 -

RFQ

IRL5602SPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44ESPBF

IRFZ44ESPBF

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies
2,178 -

RFQ

IRFZ44ESPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF630NSPBF

IRF630NSPBF

MOSFET N-CH 200V 9.3A D2PAK

Infineon Technologies
3,583 -

RFQ

IRF630NSPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6215SPBF

IRF6215SPBF

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies
3,381 -

RFQ

IRF6215SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF644NSPBF

IRF644NSPBF

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
2,155 -

RFQ

IRF644NSPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF630NLPBF

IRF630NLPBF

MOSFET N-CH 200V 9.3A TO262

Infineon Technologies
2,632 -

RFQ

IRF630NLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF634SPBF

IRF634SPBF

MOSFET N-CH 250V 8.1A D2PAK

Vishay Siliconix
2,696 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3315PBF

IRF3315PBF

MOSFET N-CH 150V 23A TO220AB

Infineon Technologies
3,583 -

RFQ

IRF3315PBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 23A (Tc) 10V 70mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ30PBF

IRFZ30PBF

MOSFET N-CH 50V 30A TO220AB

Vishay Siliconix
3,827 -

RFQ

IRFZ30PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 30A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI530NPBF

IRLI530NPBF

MOSFET N-CH 100V 12A TO220AB FP

Infineon Technologies
2,386 -

RFQ

IRLI530NPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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