Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ECH8607-TL-E

ECH8607-TL-E

N-CHANNEL SILICON MOSFET

onsemi
3,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQB3N30TM

FQB3N30TM

MOSFET N-CH 300V 3.2A D2PAK

Fairchild Semiconductor
2,934 -

RFQ

FQB3N30TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 3.2A (Tc) 10V 2.2Ohm @ 1.6A, 10V 5V @ 250µA 7 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75332S3S

HUF75332S3S

N-CHANNEL POWER MOSFET

Harris Corporation
2,788 -

RFQ

HUF75332S3S

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 52A (Tc) 10V 19mOhm @ 52A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP5N30

FQP5N30

MOSFET N-CH 300V 5.4A TO220-3

Fairchild Semiconductor
2,635 -

RFQ

FQP5N30

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 5.4A (Tc) 10V 900mOhm @ 2.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
HAT1142R02-EL-E

HAT1142R02-EL-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF823

IRF823

N-CHANNEL POWER MOSFET

Harris Corporation
2,284 -

RFQ

IRF823

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.2A (Tc) 10V 4Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD4N50TF

FQD4N50TF

MOSFET N-CH 500V 2.6A DPAK

Fairchild Semiconductor
2,258 -

RFQ

FQD4N50TF

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.6A (Tc) 10V 2.7Ohm @ 1.3A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQI7P06TU

FQI7P06TU

MOSFET P-CH 60V 7A I2PAK

Fairchild Semiconductor
2,199 -

RFQ

FQI7P06TU

Ficha técnica

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 10V 410mOhm @ 3.5A, 10V 4V @ 250µA 8.2 nC @ 10 V ±25V 295 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3818-DL-E

2SK3818-DL-E

N-CHANNEL SILICON MOSFET

Sanyo
2,000 -

RFQ

2SK3818-DL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF10N20

FQPF10N20

MOSFET N-CH 200V 6.8A TO220F

Fairchild Semiconductor
1,616 -

RFQ

FQPF10N20

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 6.8A (Tc) 10V 360mOhm @ 3.4A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 670 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF3N40

FQPF3N40

MOSFET N-CH 400V 1.6A TO220F

Fairchild Semiconductor
1,544 -

RFQ

FQPF3N40

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.6A (Tc) 10V 3.4Ohm @ 800mA, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP23N06LE

RFP23N06LE

N-CHANNEL, MOSFET

Harris Corporation
1,486 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRLR024ZTRL

AUIRLR024ZTRL

MOSFET N-CH 55V 16A DPAK

International Rectifier
1,387 -

RFQ

AUIRLR024ZTRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) - 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9622

IRF9622

P-CHANNEL POWER MOSFET

Harris Corporation
1,128 -

RFQ

IRF9622

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 3A (Tc) 10V 2.4Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR221

IRFR221

N-CHANNEL POWER MOSFET

Harris Corporation
1,075 -

RFQ

IRFR221

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4.6A (Tc) 10V 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI80N04S3-06

IPI80N04S3-06

N-CHANNEL POWER MOSFET

Infineon Technologies
1,050 -

RFQ

IPI80N04S3-06

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IRFR421

IRFR421

N-CHANNEL POWER MOSFET

Harris Corporation
1,000 -

RFQ

IRFR421

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.5A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DIT090N06

DIT090N06

MOSFET N-CH 65V 90A TO220AB

Diotec Semiconductor
1,000 -

RFQ

DIT090N06

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 65 V 90A (Tc) 10V 7mOhm @ 30A, 10V 4V @ 250µA 94 nC @ 10 V ±20V 3400 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU422

IRFU422

N-CHANNEL POWER MOSFET

Harris Corporation
1,000 -

RFQ

IRFU422

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB03N60S5

SPB03N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
1,000 -

RFQ

SPB03N60S5

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 1617181920212223...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario