Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPD50N03S2L-06

SPD50N03S2L-06

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies
2,500 -

RFQ

SPD50N03S2L-06

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.4mOhm @ 50A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD50P03L

SPD50P03L

MOSFET PCH -30V -50A TO252-5-3

Infineon Technologies
3,440 -

RFQ

SPD50P03L

Ficha técnica

Bulk OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) - 7mOhm @ 50A, 10V 2V @ 250µA 126 nC @ 10 V - 6880 pF @ 25 V - - - Surface Mount
IRF6618

IRF6618

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies
3,923 -

RFQ

IRF6618

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.35V @ 250µA 65 nC @ 4.5 V ±20V 5640 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6608

IRF6608

MOSFET N-CH 30V 13A DIRECTFET

Infineon Technologies
3,296 -

RFQ

IRF6608

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 55A (Tc) 4.5V, 10V 9mOhm @ 13A, 10V 3V @ 250µA 24 nC @ 4.5 V ±12V 2120 pF @ 15 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF1405Z

IRF1405Z

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
2,712 -

RFQ

IRF1405Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405ZL

IRF1405ZL

MOSFET N-CH 55V 75A TO262

Infineon Technologies
3,673 -

RFQ

IRF1405ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405ZS

IRF1405ZS

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
2,226 -

RFQ

IRF1405ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2807Z

IRF2807Z

MOSFET N-CH 75V 75A TO220AB

Infineon Technologies
2,112 -

RFQ

IRF2807Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807ZL

IRF2807ZL

MOSFET N-CH 75V 75A TO262

Infineon Technologies
3,884 -

RFQ

IRF2807ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807ZS

IRF2807ZS

MOSFET N-CH 75V 75A D2PAK

Infineon Technologies
3,081 -

RFQ

IRF2807ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3205Z

IRF3205Z

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,756 -

RFQ

IRF3205Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3205ZL

IRF3205ZL

MOSFET N-CH 55V 75A TO262

Infineon Technologies
3,534 -

RFQ

IRF3205ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3205ZS

IRF3205ZS

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
2,403 -

RFQ

IRF3205ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3711Z

IRFR3711Z

MOSFET N-CH 20V 93A DPAK

Infineon Technologies
3,412 -

RFQ

IRFR3711Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 93A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2160 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4105Z

IRFR4105Z

MOSFET N-CH 55V 30A DPAK

Infineon Technologies
3,851 -

RFQ

IRFR4105Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3710Z

IRFU3710Z

MOSFET N-CH 100V 42A IPAK

Infineon Technologies
3,020 -

RFQ

IRFU3710Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU4105Z

IRFU4105Z

MOSFET N-CH 55V 30A IPAK

Infineon Technologies
3,548 -

RFQ

IRFU4105Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3715Z

IRLR3715Z

MOSFET N-CH 20V 49A DPAK

Infineon Technologies
2,681 -

RFQ

IRLR3715Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 49A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 810 pF @ 10 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1405ZTRL

IRF1405ZTRL

MOSFET N-CH 55V 75A TO220AB

Vishay Siliconix
2,760 -

RFQ

IRF1405ZTRL

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405ZTRR

IRF1405ZTRR

MOSFET N-CH 55V 75A TO220AB

Vishay Siliconix
3,757 -

RFQ

IRF1405ZTRR

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Record«Prev1... 167168169170171172173174...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario