Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPU09P06PL

SPU09P06PL

MOSFET P-CH 60V 9.7A TO251-3

Infineon Technologies
2,347 -

RFQ

SPU09P06PL

Ficha técnica

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 9.7A (Tc) 4.5V, 10V 250mOhm @ 6.8A, 10V 2V @ 250µA 21 nC @ 10 V ±20V 450 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI04N03LA

IPI04N03LA

MOSFET N-CH 25V 80A TO262-3

Infineon Technologies
836 -

RFQ

IPI04N03LA

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 4.2mOhm @ 55A, 10V 2V @ 60µA 32 nC @ 5 V ±20V 3877 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP35N10

SPP35N10

MOSFET N-CH 100V 35A TO220-3

Infineon Technologies
33,068 -

RFQ

SPP35N10

Ficha técnica

Tube,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 44mOhm @ 26.4A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 1570 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPA11N60C3IN

SPA11N60C3IN

MOSFET N-CH 650V 11A TO220-3-31

Infineon Technologies
3,119 -

RFQ

SPA11N60C3IN

Ficha técnica

Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP21N10

SPP21N10

MOSFET N-CH 100V 21A TO220-3

Infineon Technologies
2,555 -

RFQ

SPP21N10

Ficha técnica

Tube,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 21A (Tc) 10V 80mOhm @ 15A, 10V 4V @ 44µA 38.4 nC @ 10 V ±20V 865 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI11N60C3XKSA1

SPI11N60C3XKSA1

MOSFET N-CH 650V 11A TO262-3

Infineon Technologies
3,419 -

RFQ

SPI11N60C3XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP42N03S2L-13

SPP42N03S2L-13

MOSFET N-CH 30V 42A TO220-3

Infineon Technologies
3,430 -

RFQ

SPP42N03S2L-13

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 4.5V, 10V 12.9mOhm @ 21A, 10V 2V @ 37µA 30.5 nC @ 10 V ±20V 1130 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP73N03S2L08XK

SPP73N03S2L08XK

MOSFET N-CH 30V 73A TO220-3

Infineon Technologies
2,894 -

RFQ

SPP73N03S2L08XK

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 73A (Tc) 4.5V, 10V 8.4mOhm @ 36A, 10V 2V @ 55µA 46.2 nC @ 10 V ±20V 1710 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP80P06PBKSA1

SPP80P06PBKSA1

MOSFET P-CH 60V 80A TO220-3

Infineon Technologies
2,178 -

RFQ

SPP80P06PBKSA1

Ficha técnica

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 23mOhm @ 64A, 10V 4V @ 5.5mA 173 nC @ 10 V ±20V 5033 pF @ 25 V - 340W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPU08P06P

SPU08P06P

MOSFET P-CH 60V 8.83A TO251-3

Infineon Technologies
2,207 -

RFQ

SPU08P06P

Ficha técnica

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.83A (Ta) - 300mOhm @ 6.2A, 10V 4V @ 250µA 13 nC @ 10 V - 420 pF @ 25 V - 42W (Tc) - Through Hole
SPU30N03S2L-10

SPU30N03S2L-10

MOSFET N-CH 30V 30A TO251-3

Infineon Technologies
2,503 -

RFQ

SPU30N03S2L-10

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V 2V @ 50µA 39.4 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP02N80C3XKSA1

SPP02N80C3XKSA1

MOSFET N-CH 800V 2A TO220-3

Infineon Technologies
6,573 -

RFQ

SPP02N80C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 2.7Ohm @ 1.2A, 10V 3.9V @ 120µA 16 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW12N50C3FKSA1

SPW12N50C3FKSA1

MOSFET N-CH 560V 11.6A TO247-3

Infineon Technologies
240 -

RFQ

SPW12N50C3FKSA1

Ficha técnica

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP80N03S2L05AKSA1

SPP80N03S2L05AKSA1

MOSFET N-CH 30V 80A TO220-3

Infineon Technologies
3,891 -

RFQ

SPP80N03S2L05AKSA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.2mOhm @ 55A, 10V 2V @ 110µA 89.7 nC @ 10 V ±20V 3320 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFR32N80Q3

IXFR32N80Q3

MOSFET N-CH 800V 24A ISOPLUS247

IXYS
2,127 -

RFQ

IXFR32N80Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 800 V 24A (Tc) 10V 300mOhm @ 16A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 6940 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL210N30P3

IXFL210N30P3

MOSFET N-CH 300V 108A ISOPLUS264

IXYS
2,855 -

RFQ

IXFL210N30P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 108A (Tc) 10V 16mOhm @ 105A, 10V 5V @ 8mA 268 nC @ 10 V ±20V 16200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB70N60Q2

IXFB70N60Q2

MOSFET N-CH 600V 70A PLUS264

IXYS
3,325 -

RFQ

IXFB70N60Q2

Ficha técnica

Tube HiPerFET™, Q2 Class Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 88mOhm @ 35A, 10V 5.5V @ 8mA 265 nC @ 10 V ±30V 12000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH1N300P3HV

IXTH1N300P3HV

MOSFET N-CH 3000V 1A TO247HV

IXYS
3,272 -

RFQ

IXTH1N300P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 1A (Tc) 10V 50Ohm @ 500mA, 10V 4V @ 250µA 30.6 nC @ 10 V ±20V 895 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT4N150HV

IXTT4N150HV

MOSFET N-CH 1500V 4A TO268

IXYS
2,302 -

RFQ

IXTT4N150HV

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 4A (Tc) 10V 6Ohm @ 500mA, 10V 5V @ 250µA 44.5 nC @ 10 V ±30V 1576 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFR64N60Q3

IXFR64N60Q3

MOSFET N-CH 600V 42A ISOPLUS247

IXYS
3,693 -

RFQ

IXFR64N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 104mOhm @ 32A, 10V 6.5V @ 4mA 190 nC @ 10 V ±30V 9930 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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