Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
VP2206N3-G

VP2206N3-G

MOSFET P-CH 60V 640MA TO92-3

Microchip Technology
422 -

RFQ

VP2206N3-G

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 60 V 640mA (Tj) 5V, 10V 900mOhm @ 3.5A, 10V 3.5V @ 10mA - ±20V 450 pF @ 25 V - 740mW (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8M100B

APT8M100B

MOSFET N-CH 1000V 8A TO247

Microchip Technology
641 -

RFQ

APT8M100B

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 8A (Tc) 10V 1.8Ohm @ 4A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 1885 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC080SMA120B

MSC080SMA120B

SICFET N-CH 1200V 37A TO247-3

Microchip Technology
3,579 -

RFQ

MSC080SMA120B

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC035SMA070B4

MSC035SMA070B4

TRANS SJT N-CH 700V 77A TO247-4

Microchip Technology
116 -

RFQ

MSC035SMA070B4

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 77A (Tc) 20V 44mOhm @ 30A, 20V 2.7V @ 2mA (Typ) 99 nC @ 20 V +23V, -10V 2010 pF @ 700 V - 283W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N6660

2N6660

MOSFET N-CH 60V 410MA TO39

Microchip Technology
2,154 -

RFQ

2N6660

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 410mA (Ta) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 24 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT60M60JFLL

APT60M60JFLL

MOSFET N-CH 600V 70A ISOTOP

Microchip Technology
248 -

RFQ

APT60M60JFLL

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 60mOhm @ 35A, 10V 5V @ 5mA 289 nC @ 10 V ±30V 12630 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
DN2540N3-G-P003

DN2540N3-G-P003

MOSFET N-CH 400V 120MA TO92

Microchip Technology
7,907 -

RFQ

DN2540N3-G-P003

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 120mA (Tj) 0V 25Ohm @ 120mA, 0V - - ±20V 300 pF @ 25 V Depletion Mode 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC750SMA170B

MSC750SMA170B

SICFET N-CH 1700V 7A TO247-3

Microchip Technology
112 -

RFQ

MSC750SMA170B

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 7A (Tc) 20V 940mOhm @ 2.5A, 20V 3.25V @ 100µA (Typ) 11 nC @ 20 V +23V, -10V 184 pF @ 1360 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT9M100S

APT9M100S

MOSFET N-CH 1000V 9A D3PAK

Microchip Technology
632 -

RFQ

APT9M100S

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 9A (Tc) 10V 1.4Ohm @ 5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2605 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT18M100S

APT18M100S

MOSFET N-CH 1000V 18A D3PAK

Microchip Technology
183 -

RFQ

APT18M100S

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 700mOhm @ 9A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 4845 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT1204R7BFLLG

APT1204R7BFLLG

MOSFET N-CH 1200V 3.5A TO247

Microchip Technology
106 -

RFQ

APT1204R7BFLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 3.5A (Tc) 10V 4.7Ohm @ 1.75A, 10V 5V @ 1mA 31 nC @ 10 V ±30V 715 pF @ 25 V - 135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT60N60BCSG

APT60N60BCSG

MOSFET N-CH 600V 60A TO247

Microchip Technology
787 -

RFQ

APT60N60BCSG

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.9V @ 3mA 190 nC @ 10 V ±30V 7200 pF @ 25 V - 431W (Tc) -55°C ~ 150°C (TJ) Through Hole
LND150N3-G-P002

LND150N3-G-P002

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology
2,963 -

RFQ

LND150N3-G-P002

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
LND150N3-G-P013

LND150N3-G-P013

MOSFET N-CH 500V 30MA TO92-3

Microchip Technology
2,360 -

RFQ

LND150N3-G-P013

Ficha técnica

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 740mW (Ta) -55°C ~ 150°C (TJ) Through Hole
VN10KN3-G-P003

VN10KN3-G-P003

MOSFET N-CH 60V 310MA TO92-3

Microchip Technology
2,191 -

RFQ

VN10KN3-G-P003

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Tj) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN10KN3-G-P013

VN10KN3-G-P013

MOSFET N-CH 60V 310MA TO92-3

Microchip Technology
2,005 -

RFQ

VN10KN3-G-P013

Ficha técnica

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Tj) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN10KN3-G-P014

VN10KN3-G-P014

MOSFET N-CH 60V 310MA TO92-3

Microchip Technology
3,453 -

RFQ

VN10KN3-G-P014

Ficha técnica

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 60 V 310mA (Tj) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TN5325N3-G-P002

TN5325N3-G-P002

MOSFET N-CH 250V 215MA TO92-3

Microchip Technology
3,805 -

RFQ

TN5325N3-G-P002

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 215mA (Ta) 4.5V, 10V 7Ohm @ 1A, 10V 2V @ 1mA - ±20V 110 pF @ 25 V - 740mW (Ta) - Through Hole
TP5322N8-G

TP5322N8-G

MOSFET P-CH 220V 260MA TO243AA

Microchip Technology
3,964 -

RFQ

TP5322N8-G

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 220 V 260mA (Tj) 4.5V, 10V 12Ohm @ 200mA, 10V 2.4V @ 1mA - ±20V 110 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
VN0104N3-G-P013

VN0104N3-G-P013

MOSFET N-CH 40V 350MA TO92-3

Microchip Technology
2,851 -

RFQ

VN0104N3-G-P013

Ficha técnica

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 40 V 350mA (Tj) 5V, 10V 3Ohm @ 1A, 10V 2.4V @ 1mA - ±20V 65 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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