Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI1307DL-T1-E3

SI1307DL-T1-E3

MOSFET P-CH 12V 850MA SC70-3

Vishay Siliconix
3,063 -

RFQ

SI1307DL-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 850mA (Ta) 1.8V, 4.5V 290mOhm @ 1A, 4.5V 450mV @ 250µA (Min) 5 nC @ 4.5 V ±8V - - 290mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1405DL-T1-E3

SI1405DL-T1-E3

MOSFET P-CH 8V 1.6A SC70-6

Vishay Siliconix
3,896 -

RFQ

SI1405DL-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 1.6A (Ta) 1.8V, 4.5V 125mOhm @ 1.8A, 4.5V 450mV @ 250µA (Min) 7 nC @ 4.5 V ±8V - - 568mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2305ADS-T1-E3

SI2305ADS-T1-E3

MOSFET P-CH 8V 5.4A SOT23-3

Vishay Siliconix
2,294 -

RFQ

SI2305ADS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 5.4A (Tc) 1.8V, 4.5V 40mOhm @ 4.1A, 4.5V 800mV @ 250µA 15 nC @ 4.5 V ±8V 740 pF @ 4 V - 960mW (Ta), 1.7W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI2335DS-T1-E3

SI2335DS-T1-E3

MOSFET P-CH 12V 3.2A SOT23-3

Vishay Siliconix
3,783 -

RFQ

SI2335DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 3.2A (Ta) 1.8V, 4.5V 51mOhm @ 4A, 4.5V 450mV @ 250µA (Min) 15 nC @ 4.5 V ±8V 1225 pF @ 6 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR572DP-T1-RE3

SIR572DP-T1-RE3

N-CHANNEL 150 V (D-S) MOSFET POW

Vishay Siliconix
3,754 -

RFQ

SIR572DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 150 V 14.8A (Ta), 59.7A (Tc) 7.5V, 10V 10.8mOhm @ 10A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 2733 pF @ 75 V - 5.7W (Ta), 92.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1011X-T1-GE3

SI1011X-T1-GE3

MOSFET P-CH 12V SC89-3

Vishay Siliconix
2,999 -

RFQ

SI1011X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 480mA (Ta) 1.2V, 4.5V 640mOhm @ 400mA, 4.5V 800mV @ 250µA 4 nC @ 4.5 V ±5V 62 pF @ 6 V - 190mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIB417AEDK-T1-GE3

SIB417AEDK-T1-GE3

MOSFET P-CH 8V 9A PPAK SC75-6

Vishay Siliconix
3,159 -

RFQ

SIB417AEDK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 9A (Tc) 1.2V, 4.5V 32mOhm @ 3A, 4.5V 1V @ 250µA 18.5 nC @ 5 V ±5V 878 pF @ 4 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ461EP-T2_GE3

SQJ461EP-T2_GE3

P-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix
3,656 -

RFQ

SQJ461EP-T2_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 16mOhm @ 14.4A, 10V 2.5V @ 250µA 140 nC @ 10 V ±20V 4710 pF @ 30 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHP4N80E-BE3

SIHP4N80E-BE3

N-CHANNEL 600V

Vishay Siliconix
3,162 -

RFQ

SIHP4N80E-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHFBE30STRL-GE3

SIHFBE30STRL-GE3

MOSFET N-CHANNEL 800V

Vishay Siliconix
3,956 -

RFQ

SIHFBE30STRL-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002-E3

2N7002-E3

MOSFET N-CH 60V 115MA TO236

Vishay Siliconix
3,554 -

RFQ

2N7002-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR210PBF-BE3

IRFR210PBF-BE3

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix
3,794 -

RFQ

IRFR210PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) - 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7460DP-T1-GE3

SI7460DP-T1-GE3

MOSFET N-CH 60V 11A PPAK SO-8

Vishay Siliconix
3,792 -

RFQ

SI7460DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta) 4.5V, 10V 9.6mOhm @ 18A, 10V 3V @ 250µA 100 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHA15N50E-GE3

SIHA15N50E-GE3

N-CHANNEL 500V

Vishay Siliconix
3,205 -

RFQ

SIHA15N50E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJQ150E-T1_GE3

SQJQ150E-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix
2,652 -

RFQ

SQJQ150E-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 233A (Tc) 10V 1.9mOhm @ 20A, 10V 3.5V @ 250µA 92 nC @ 10 V ±20V 4643 pF @ 25 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR578DP-T1-RE3

SIR578DP-T1-RE3

N-CHANNEL 150 V (D-S) MOSFET POW

Vishay Siliconix
2,252 -

RFQ

SIR578DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 150 V 17.2A (Ta), 70.2A (Tc) 7.5V, 10V 8.8mOhm @ 20A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 2540 pF @ 75 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR638DP-T1-RE3

SIDR638DP-T1-RE3

N-CHANNEL 40-V (D-S) MOSFET

Vishay Siliconix
2,443 -

RFQ

SIDR638DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 64.6A (Ta), 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 204 nC @ 10 V +20V, -16V 10500 pF @ 20 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD14N60ET5-GE3

SIHD14N60ET5-GE3

N-CHANNEL 600V

Vishay Siliconix
2,182 -

RFQ

SIHD14N60ET5-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD14N60ET4-GE3

SIHD14N60ET4-GE3

N-CHANNEL 600V

Vishay Siliconix
2,728 -

RFQ

SIHD14N60ET4-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQD40061EL-T4_GE3

SQD40061EL-T4_GE3

P-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix
2,590 -

RFQ

SQD40061EL-T4_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 5.1mOhm @ 30A, 10V 2.5V @ 250µA 280 nC @ 10 V ±20V 14500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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