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Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYC30W-600PQDIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors |
2,609 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 22 ns | 10 µA @ 600 V | 600 V | 30A | 175°C (Max) | 2.75 V @ 30 A | |
|
BYC10D-600,127DIODE GEN PURP 500V 10A TO220AC WeEn Semiconductors |
3,556 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 18 ns | 200 µA @ 600 V | 500 V | 10A | 150°C (Max) | 2.5 V @ 10 A | ||
|
|
BYC5D-500,127DIODE GEN PURP 500V 5A TO220AC WeEn Semiconductors |
2,564 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 16 ns | 40 µA @ 500 V | 500 V | 5A | 150°C (Max) | 2 V @ 5 A | |
|
NXPSC04650D6JDIODE SCHOTTKY 650V 4A DPAK WeEn Semiconductors |
2,439 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | |
|
WNSC021200QSILICON CARBIDE POWER DIODE WeEn Semiconductors |
2,970 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 109pF @ 1V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 2A | 175°C (Max) | 1.6 V @ 2 A | |
|
BYC5DX-500,127DIODE GEN PURP 500V 5A TO220FP WeEn Semiconductors |
2,085 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 16 ns | 40 µA @ 500 V | 500 V | 5A | 150°C (Max) | 2 V @ 5 A | |
|
|
BYC8D-600,127DIODE GEN PURP 600V 8A TO220AC WeEn Semiconductors |
3,787 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 40 µA @ 600 V | 600 V | 8A | 150°C (Max) | 2.9 V @ 8 A | |
|
|
BYC8DX-600,127DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors |
3,504 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 40 µA @ 600 V | 600 V | 8A | 150°C (Max) | 2.9 V @ 8 A | |
|
BYV25FB-600,118DIODE GEN PURP 600V 5A D2PAK WeEn Semiconductors |
3,776 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.9 V @ 5 A | |
|
|
BYV29F-600,127DIODE GEN PURP 600V 9A TO220AC WeEn Semiconductors |
3,861 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 9A | 150°C (Max) | 1.9 V @ 8 A | |
|
|
BYV29FB-600,118DIODE GEN PURP 600V 9A D2PAK WeEn Semiconductors |
3,348 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 9A | 150°C (Max) | 1.9 V @ 8 A | |
|
|
BYV29FD-600,118DIODE GEN PURP 600V 9A DPAK WeEn Semiconductors |
2,628 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 9A | 150°C (Max) | 1.9 V @ 8 A | |
|
|
BYV29B-500,118DIODE GEN PURP 500V 9A D2PAK WeEn Semiconductors |
400 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 50 µA @ 500 V | 500 V | 9A | 150°C (Max) | 1.25 V @ 8 A | |
|
|
BYW29ED-200,118DIODE GEN PURP 200V 8A DPAK WeEn Semiconductors |
112 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 8A | 150°C (Max) | 1.3 V @ 20 A | |
|
NUR460/L03,112DIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors |
2,884 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 65 ns | 50 µA @ 600 V | 600 V | 4A | 150°C (Max) | 1.28 V @ 4 A | |
|
|
BYC20X-600PQDIODE GEN PURP 600V 20A TO220F WeEn Semiconductors |
2,287 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 20A | 175°C (Max) | 2.5 V @ 20 A | |
|
WNSC06650T6JSILICON CARBIDE POWER DIODE WeEn Semiconductors |
595 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 40 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | ||
|
|
BYC8B-600PJDIODE GEN PURP 600V 8A D2PAK WeEn Semiconductors |
3,662 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 18 ns | 20 µA @ 600 V | 600 V | 8A | 175°C (Max) | 3.4 V @ 8 A | |
|
|
BYC5-600PQDIODE GEN PURP 600V 5A TO220AC WeEn Semiconductors |
2,137 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 3.3 V @ 5 A | |
|
|
BYC5X-600PQDIODE GEN PURP 600V 5A TO220F WeEn Semiconductors |
3,818 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 3.3 V @ 5 A |
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