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Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
WNSC2D04650XQ

WNSC2D04650XQ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors 		3,000 -

RFQ

WNSC2D04650XQ

Ficha técnica

 Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 125pF @ 1V, 1MHz 0 ns 20 µA @ 650 V 650 V 4A 175°C 1.7 V @ 4 A
WNSC2D10650TJ

WNSC2D10650TJ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors 		3,000 -

RFQ

WNSC2D10650TJ

Ficha técnica

 Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 310pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 10A 175°C 1.7 V @ 10 A
BYC8-600P,127

BYC8-600P,127

DIODE GEN PURP 600V 8A TO220AC

WeEn Semiconductors 		2,878 -

RFQ

BYC8-600P,127

Ficha técnica

 Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 18 ns 20 µA @ 600 V 600 V 8A 175°C (Max) 1.9 V @ 8 A
BYW29E-200,127

BYW29E-200,127

DIODE GEN PURP 200V 8A TO220AC

WeEn Semiconductors 		9,990 -

RFQ

BYW29E-200,127

Ficha técnica

 Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 10 µA @ 200 V 200 V 8A 150°C (Max) 1.05 V @ 8 A
BYC10DX-600,127

BYC10DX-600,127

DIODE GEN PURP 500V 10A TO220FP

WeEn Semiconductors 		2,276 -

RFQ

BYC10DX-600,127

Ficha técnica

 Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 18 ns 200 µA @ 600 V 500 V 10A 150°C (Max) 2.5 V @ 10 A
BYC8X-600,127

BYC8X-600,127

DIODE GEN PURP 600V 8A TO220FP

WeEn Semiconductors 		3,950 -

RFQ

BYC8X-600,127

Ficha técnica

 Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 52 ns 150 µA @ 600 V 600 V 8A 150°C (Max) 2.9 V @ 8 A
BYC10-600,127

BYC10-600,127

DIODE GEN PURP 500V 10A TO220AC

WeEn Semiconductors 		4,365 -

RFQ

BYC10-600,127

Ficha técnica

 Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 55 ns 200 µA @ 600 V 500 V 10A 150°C (Max) 2.9 V @ 10 A
BYV79E-200,127

BYV79E-200,127

DIODE GEN PURP 200V 14A TO220AC

WeEn Semiconductors 		949 -

RFQ

BYV79E-200,127

Ficha técnica

 Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 50 µA @ 200 V 200 V 14A 150°C (Max) 1.05 V @ 14 A
BYT79-600,127

BYT79-600,127

DIODE GEN PURP 600V 15A TO220AC

WeEn Semiconductors 		312 -

RFQ

BYT79-600,127

Ficha técnica

 Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 50 µA @ 600 V 600 V 15A 150°C (Max) 1.38 V @ 15 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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