Más categorías de productos

Diodos - Rectificadores - Individuales

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
WND08P16XQ STANDARD POWER DIODE WeEn Semiconductors	4,374	-	RFQ	Ficha técnica	Tube	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	50 µA @ 1600 V	1600 V	8A	150°C	1.2 V @ 8 A
NXPSC066506Q DIODE SCHOTTKY 650V 6A TO220AC WeEn Semiconductors	3,000	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
NXPSC06650X6Q DIODE SCHOTTKY 650V 6A TO220F WeEn Semiconductors	2,997	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
NXPSC10650B6J DIODE SCHOTTKY 650V 10A D2PAK WeEn Semiconductors	3,190	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	300pF @ 1V, 1MHz	0 ns	250 µA @ 650 V	650 V	10A	175°C (Max)	1.7 V @ 10 A
NXPSC06650B6J DIODE SCHOTTKY 650V 6A D2PAK WeEn Semiconductors	3,190	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
WNSC12650WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	1,200	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	328pF @ 1V, 1MHz	0 ns	60 µA @ 650 V	650 V	12A	175°C	1.7 V @ 12 A
NXPSC12650B6J SILICON CARBIDE POWER DIODE WeEn Semiconductors	6,400	-	RFQ		Cut Tape (CT),Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	380pF @ 1V, 1MHz	0 ns	80 µA @ 650 V	650 V	12A	175°C (Max)	1.7 V @ 12 A
BYC405X-400PQ DUAL HYPERFAST POWER DIODE WeEn Semiconductors	4,098	-	RFQ		Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	10 µA @ 400 V	400 V	10A	150°C	1.5 V @ 5 A
WNSC2D101200WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3,000	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	490pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A	175°C	1.65 V @ 10 A
NXPSC086506Q DIODE SCHOTTKY 650V 8A TO220AC WeEn Semiconductors	3,000	-	RFQ	Ficha técnica	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	260pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
NXPSC08650X6Q DIODE SCHOTTKY 650V 8A TO220F WeEn Semiconductors	2,998	-	RFQ	Ficha técnica	Bulk	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	260pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
BYC75W-600PQ DIODE GEN PURP 600V 75A TO247-2 WeEn Semiconductors	3,099	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 600 V	600 V	75A	175°C (Max)	2.75 V @ 75 A
BYR16W-1200Q DIODE GEN PURP 1.2KV 16A TO247-2 WeEn Semiconductors	3,335	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	105 ns	100 µA @ 1200 V	1200 V	16A	175°C (Max)	2.7 V @ 16 A
BYR29X-800PQ DIODE GEN PURP 800V 8A TO220F WeEn Semiconductors	3,469	-	RFQ	Ficha técnica	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	55 ns	10 µA @ 800 V	800 V	8A	175°C (Max)	1.7 V @ 8 A
BYV29X-600AQ DIODE GEN PURP TO220F WeEn Semiconductors	3,899	-	RFQ		Tube	RoHS	-	-	Active	-	-	-	-	-	-	-	-
OB1002Z OB1002/UNCASED/NO MARKCHIPS O WeEn Semiconductors*	2,854	-	RFQ		Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-
OB2001/001V OB2001/001/UNCASED/NO MARKCHI WeEn Semiconductors*	3,137	-	RFQ		Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-
OB2004V OB2004/UNCASED/NO MARKCHIPS O WeEn Semiconductors*	3,915	-	RFQ		Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-
NXPSC08650D6J DIODE SCHOTTKY 650V 8A DPAK WeEn Semiconductors	7,184	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	260pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
OB2005V OB2005/UNCASED/NO MARKCHIPS O WeEn Semiconductors*	2,162	-	RFQ		Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-